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Extract from the Register of European Patents

EP About this file: EP2494339

EP2494339 - METHOD FOR DETECTING CRACKS IN SEMICONDUCTOR SUBSTRATES [Right-click to bookmark this link]
Former [2012/36]METHOD AND DEVICE FOR DETECTING CRACKS IN SEMICONDUCTOR SUBSTRATES
[2019/29]
StatusPatent maintained as amended
Status updated on  19.02.2021
Database last updated on 11.09.2024
FormerThe patent has been granted
Status updated on  16.06.2017
FormerGrant of patent is intended
Status updated on  28.02.2017
Most recent event   Tooltip19.02.2021Patent maintained (B2 publication)published on 24.03.2021  [2021/12]
Applicant(s)For all designated states
SCHOTT AG
Hattenbergstraße 10
55122 Mainz / DE
[N/P]
Former [2012/36]For all designated states
SCHOTT AG
Hattenbergstrasse 10
55122 Mainz / DE
Inventor(s)01 / ORTNER, Andreas
Mainzer Strasse 6L
55435 Gau-Algesheim / DE
02 / GERSTNER, Klaus
Eleonorenstrasse 2
65474 Bischofsheim / DE
03 / VON CAMPE, Hilmar
Jakob-Lengfelder-Strasse 19
61352 Bad Homburg / DE
04 / STELZL, Michael
Am Schinnergraben 65
55129 Mainz / DE
 [2012/36]
Representative(s)Schmidt, Oliver
Blumbach - Zinngrebe
Patent- und Rechtsanwälte PartG mbB
Alexandrastraße 5
65187 Wiesbaden / DE
[2021/12]
Former [2012/36]Schmidt, Oliver
Blumbach - Zinngrebe patentConsult Alexandrastraße 5
D-65187 Wiesbaden / DE
Application number, filing date10751799.713.08.2010
[2017/29]
WO2010EP04980
Priority number, dateDE2009105071126.10.2009         Original published format: DE102009050711
[2012/36]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2011050873
Date:05.05.2011
Language:DE
[2011/18]
Type: A1 Application with search report 
No.:EP2494339
Date:05.09.2012
Language:DE
The application published by WIPO in one of the EPO official languages on 05.05.2011 takes the place of the publication of the European patent application.
[2012/36]
Type: B1 Patent specification 
No.:EP2494339
Date:19.07.2017
Language:DE
[2017/29]
Type: B2 New European patent specification 
No.:EP2494339
Date:24.03.2021
Language:DE
[2021/12]
Search report(s)International search report - published on:EP05.05.2011
ClassificationIPC:G01N21/95
[2012/36]
CPC:
G01N21/9505 (EP,US); H01L22/00 (KR)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/36]
TitleGerman:VERFAHREN ZUR DETEKTION VON RISSEN IN HALBLEITERSUBSTRATEN[2019/29]
English:METHOD FOR DETECTING CRACKS IN SEMICONDUCTOR SUBSTRATES[2019/29]
French:PROCÉDÉ DE DÉTECTION DE FISSURES DANS DES SUBSTRATS SEMI-CONDUCTEURS[2019/29]
Former [2012/36]VERFAHREN UND VORRICHTUNG ZUR DETEKTION VON RISSEN IN HALBLEITERSUBSTRATEN
Former [2012/36]METHOD AND DEVICE FOR DETECTING CRACKS IN SEMICONDUCTOR SUBSTRATES
Former [2012/36]PROCÉDÉ ET DISPOSITIF DE DÉTECTION DE FISSURES DANS DES SUBSTRATS À SEMI-CONDUCTEURS
Entry into regional phase16.05.2012National basic fee paid 
16.05.2012Designation fee(s) paid 
16.05.2012Examination fee paid 
Examination procedure24.06.2011Request for preliminary examination filed
International Preliminary Examining Authority: EP
16.05.2012Amendment by applicant (claims and/or description)
16.05.2012Examination requested  [2012/36]
29.09.2012Observations by third parties
07.08.2015Observations by third parties
05.10.2015Despatch of a communication from the examining division (Time limit: M06)
10.03.2016Reply to a communication from the examining division
21.06.2016Observations by third parties
06.12.2016Cancellation of oral proceeding that was planned for 07.12.2016
07.12.2016Date of oral proceedings (cancelled)
14.02.2017Cancellation of oral proceeding that was planned for 15.02.2017
15.02.2017Date of oral proceedings (cancelled)
01.03.2017Communication of intention to grant the patent
08.06.2017Fee for grant paid
08.06.2017Fee for publishing/printing paid
08.06.2017Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  05.10.2015
Opposition(s)Opponent(s)01  19.04.2018  26.04.2018  ADMISSIBLE
Intego GmbH
Henri-Dunant-Str. 8
91058 Erlangen / DE
Opponent's representative
FDST Patentanwälte
Nordostpark 16
90411 Nürnberg / DE
 [2018/22]
30.04.2018Invitation to proprietor to file observations on the notice of opposition
26.06.2018Reply of patent proprietor to notice(s) of opposition
04.06.2019Date of oral proceedings
17.10.2019Despatch of interlocutory decision in opposition
17.10.2019Despatch of minutes of oral proceedings
05.10.2020Legal effect of interlocutory decision in opposition
27.10.2020Despatch of communication that the patent will be maintained as amended
13.01.2021Fee for printing new specification paid
Appeal following opposition16.12.2019Appeal received No.  T3279/19
17.09.2020Result of appeal procedure: appeal of the proprietor inadmissible
Fees paidRenewal fee
23.08.2012Renewal fee patent year 03
23.08.2013Renewal fee patent year 04
25.08.2014Renewal fee patent year 05
20.08.2015Renewal fee patent year 06
22.08.2016Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU13.08.2010
AL19.07.2017
CY19.07.2017
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MK19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
PT19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
TR19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
[2020/33]
Former [2020/27]HU13.08.2010
CY19.07.2017
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MK19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
PT19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
TR19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2020/15]HU13.08.2010
CY19.07.2017
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MK19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
TR19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2019/51]HU13.08.2010
CY19.07.2017
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MK19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2019/46]HU13.08.2010
CY19.07.2017
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2019/31]HU13.08.2010
CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/50]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
AT13.08.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/43]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
MT19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/37]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SI19.07.2017
SK19.07.2017
SM19.07.2017
IE13.08.2017
LU13.08.2017
BE31.08.2017
CH31.08.2017
LI31.08.2017
FR19.09.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/35]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SK19.07.2017
SM19.07.2017
IE13.08.2017
LU13.08.2017
CH31.08.2017
LI31.08.2017
BG19.10.2017
GB19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/34]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SK19.07.2017
SM19.07.2017
IE13.08.2017
LU13.08.2017
CH31.08.2017
LI31.08.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/24]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
IT19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SK19.07.2017
SM19.07.2017
CH31.08.2017
LI31.08.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/23]CZ19.07.2017
DK19.07.2017
EE19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
LT19.07.2017
LV19.07.2017
MC19.07.2017
NL19.07.2017
PL19.07.2017
RO19.07.2017
SE19.07.2017
SK19.07.2017
CH31.08.2017
LI31.08.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/21]CZ19.07.2017
DK19.07.2017
ES19.07.2017
FI19.07.2017
HR19.07.2017
LT19.07.2017
LV19.07.2017
NL19.07.2017
PL19.07.2017
SE19.07.2017
CH31.08.2017
LI31.08.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/12]ES19.07.2017
FI19.07.2017
HR19.07.2017
LT19.07.2017
LV19.07.2017
NL19.07.2017
PL19.07.2017
SE19.07.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/11]ES19.07.2017
FI19.07.2017
HR19.07.2017
LT19.07.2017
NL19.07.2017
PL19.07.2017
SE19.07.2017
BG19.10.2017
NO19.10.2017
GR20.10.2017
IS19.11.2017
Former [2018/09]FI19.07.2017
LT19.07.2017
NL19.07.2017
SE19.07.2017
NO19.10.2017
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Former [2018/07]LT19.07.2017
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Cited inInternational search[AD]JPH08220008  (MITSUBISHI ELECTRIC CORP) [AD] 1,10 * the whole document *;
 [XI]US2005231713  (OWEN MARK D [US], et al) [X] 1,3-5,7,9,10,13-19 * paragraphs [0071] , [0072] , [0077]; figures 9-11 * [I] 2,6,11,12;
 [A]CN1908638  (UNIV SHANGHAI JIAOTONG [CN]) [A] 1,10* figures 1,2 *;
 [X]WO2009125896  (SEMISYSCO CO LTD [KR], et al) [X] 1,8,10 * paragraphs [0111] - [0116] - [0190] - [0193]; figures 9-12 *
ExaminationJP2001305072
    - RAKOTONIAINA J P ET AL., "Distribution and formation of silicon carbide and silicon nitride precipitates in block-cast multicrystalline silicon", 20TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, Barcelona, Spain, (20050606), pages 773 - 776
    - Lau W S, Infrared Characterization for Microelectronics, Singapore, World Scientific Publishing Co., (1999), page 145, ISBN 981-02-2352-8
by applicantJPH08220008
 DE10146879
 WO2008112597
otherJP2001305072
 DE10316707
    - OGAWA T. AND N. NANGO, "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", REVIEW OF SCIENTIFIC INSTRUMENTS, (19860601), vol. 57, no. 6, pages 1135 - 1139, XP001321609
    - NANGO N. ET AL, "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. APPL. PHYSICS, (1995), vol. 78, no. 4, pages 2892 - 2893, XP003028353

DOI:   http://dx.doi.org/10.1063/1.360033
    - FILLARD J.P., "Laser Scanning Tomography: A Non Destructive Qualification Test for Semiconductors", SOLID STATE DEVICE RESEARCH CONFERENCE, (19880913), pages C4-463 - C4-470, XP031652325
    - TAIJING L; TOYODA K; NANGO N; OGAWA T, "Observation of microdefects and microprecipitates in Si crystals by IR scattering tomography", JOURNAL OF CRYSTAL GROWTH, (19910201), vol. 108, no. 3-4, pages 482 - 490, XP024430301

DOI:   http://dx.doi.org/10.1016/0022-0248(91)90225-T
    - RUELAND E. ET AL., "OPTICAL [MU]-CRACK DETECTION IN COMBINATION WITH STABILITY TESTING FOR IN-LINE-INSPECTION OF WAFERS AND CELLS", 20TH EUROPEAN SOLAR ENERGY CONFERENCE AND EXHIBITION, (20050606), XP002561474
    - RAKOTONIAINA J.P. ET AL., "DISTRIBUTION AND FORMATION OF SILICON CARBIDE AND SILICON NITRIDE PRECIPITATES IN BLOCK-CAST MULTICRYSTALLINE SILICON", 20TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, (20050606), pages 773 - 776, XP055207291
    - INFRARED CHARACTERIZATION FOR MICROELECTRONICS, SINGAPORE, WORLD SCIENTIFIC PUBLISHING CO. PTE LTD., (1999), page 145, ISBN 981-02-2352-8, XP003035290
OppositionUS5355213
 JP2001305072
 US2005231713
 DE10316707
 CN1908638
 DE112006000392T
 WO2009125896
 DE102009017786
 US8055058
    - OGAWA et al., "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", Rev. Sci. Instrum., (19860600), vol. 57, no. 6, pages 1135 - 1139, XP001321609
    - TAIJING et al., "Oberservation of microdefects and microprecipitates in Si crystals by IR scat- tering tomography", Journal of Crystal Growth, (19910000), vol. 108, no. 3-4, pages 482 - 490, XP024430301

DOI:   http://dx.doi.org/10.1016/0022-0248(91)90225-T
    - NANGO et al., "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. Appl. Phys., (19950815), vol. 78, no. 4, pages 2892 - 2893, XP003028353

DOI:   http://dx.doi.org/10.1063/1.360033
    - E. RUELAND et al., "Optical µ-crack detection in combination with stability testing for in-line- inspection of wafers and cells", 20th European Solar Energy Conference and Exhibition, Barcelona, Spain, (20050606), pages 1 - 4, XP002561474
    - OGAWA et al., "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", Rev. Sci. Instrum., (19860600), vol. 57, no. 6, pages 1135 - 1139
    - TAIJING et al., "Oberservation of microdefects and microprecipitates in Si crystals by IR scat- tering tomography", Journal of Crystal Growth, (19910000), vol. 108, no. 3-4, pages 482 - 490
    - NANGO et al., "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. Appl. Phys., (19950815), vol. 78, no. 4, pages 2892 - 2893
    - Gräff O.; Ortner A.: "Neues Infrarot-Prüfverfahren zur Detektion von Mikrorissen in Silizium-Wafer". (DGaO-Proceedings 2010)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.