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Extract from the Register of European Patents

EP About this file: EP2432082

EP2432082 - NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  20.03.2015
Database last updated on 09.09.2024
Most recent event   Tooltip20.03.2015Withdrawal of applicationpublished on 22.04.2015  [2015/17]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku Osaka-shi
Osaka 541-0041 / JP
[2012/12]
Inventor(s)01 / KYONO, Takashi
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1, Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
02 / ENYA, Yohei
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
03 / YOSHIZUMI, Yusuke
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1, Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
04 / AKITA, Katsushi
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
05 / UENO, Masaki
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
06 / SUMITOMO, Takamichi
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1, Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
 [2012/12]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2012/12]Grünecker, Kinkeldey, Stockmair & Schwanhäusser
Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date10774785.929.03.2010
WO2010JP55589
Priority number, dateJP2009011488711.05.2009         Original published format: JP 2009114887
[2012/12]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2010131526
Date:18.11.2010
Language:JA
[2010/46]
Type: A1 Application with search report 
No.:EP2432082
Date:21.03.2012
Language:EN
[2012/12]
Search report(s)International search report - published on:JP18.11.2010
ClassificationIPC:H01S5/323
[2012/12]
CPC:
H01S5/34333 (EP,US); H01S5/323 (KR); B82Y20/00 (EP,US);
H01L33/16 (EP,US); H01L33/32 (EP,US); H01S5/320275 (EP,US);
H01S5/3201 (EP,US); H01S5/3211 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/12]
TitleGerman:LICHTEMITTIERENDES NITRID-HALBLEITERELEMENT[2012/12]
English:NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT[2012/12]
French:ELÉMENT LUMINESCENT À SEMI-CONDUCTEUR NITRURÉ[2012/12]
Entry into regional phase09.12.2011Translation filed 
09.12.2011National basic fee paid 
09.12.2011Search fee paid 
09.12.2011Designation fee(s) paid 
09.12.2011Examination fee paid 
Examination procedure09.12.2011Examination requested  [2012/12]
12.03.2015Application withdrawn by applicant  [2015/17]
Fees paidRenewal fee
09.12.2011Renewal fee patent year 03
26.03.2013Renewal fee patent year 04
27.03.2014Renewal fee patent year 05
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Cited inInternational search[Y]JP2002324946  (RICOH KK);
 [Y]JP2008060375  (SANYO ELECTRIC CO);
 [Y]JPH11261160  (SHARP KK)
by applicantJP2001237455
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.