EP2466704 - MULTIBEAM COHERENT LASER DIODE SOURCE (EMBODIMENTS) [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 19.04.2013 Database last updated on 18.10.2024 | Most recent event Tooltip | 19.04.2013 | Withdrawal of application | published on 22.05.2013 [2013/21] | Applicant(s) | For all designated states General Nano Optics Limited Centennial Building, 3rd Floor Flat/office 303 Themistokli Dervi, 48 P.C. 1066 Nicosia / CY | [2012/25] | Inventor(s) | 01 /
SHVEYKIN, Vasily Ivanovich Ul. Arkhitektora Vlasova 33-1-11 Moscow 117393 / RU | 02 /
GELOVANI, Viktor Archilovich Per. Sivtsev Vrazhek 9-9 Moscow 119002 / RU | 03 /
SONK, Aleksey Nikolaevich Leninskii pr-t 137/1-35 Moscow 117513 / RU | [2012/25] | Representative(s) | Anohins, Vladimirs, et al Agency Tria Robit P.O. Box 22 1010 Riga / LV | [N/P] |
Former [2012/25] | Anohins, Vladimirs, et al Agency Tria Robit P.O. Box 22 1010 Riga / LV | Application number, filing date | 10800095.1 | 07.07.2010 | WO2010RU00377 | Priority number, date | RU20090127486 | 17.07.2009 Original published format: RU 2009127486 | [2012/25] | Filing language | RU | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2011008127 | Date: | 20.01.2011 | Language: | RU | [2011/03] | Type: | A1 Application with search report | No.: | EP2466704 | Date: | 20.06.2012 | Language: | EN | [2012/25] | Search report(s) | International search report - published on: | RU | 20.01.2011 | Classification | IPC: | H01S5/32 | [2012/25] | CPC: |
H01S5/026 (EP,US);
H01S5/32 (KR);
H01S5/06 (KR);
H01S5/1085 (EP,US);
H01S5/4006 (EP,US);
H01S5/42 (EP,US);
H01S5/0265 (EP,US);
H01S5/1007 (EP,US);
H01S5/1064 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR [2012/25] | Title | German: | KOHÄRENTE MEHRSTRAHLEN-LASERDIODENQUELLE (AUSFÜHRUNGSFORMEN) | [2012/25] | English: | MULTIBEAM COHERENT LASER DIODE SOURCE (EMBODIMENTS) | [2012/25] | French: | SOURCE DE DIODE À ÉMISSION LASER COHÉRENTE MULTIFAISCEAU | [2012/25] | Entry into regional phase | 16.02.2012 | Translation filed | 16.02.2012 | National basic fee paid | 16.02.2012 | Search fee paid | 16.02.2012 | Designation fee(s) paid | 16.02.2012 | Examination fee paid | Examination procedure | 16.02.2012 | Amendment by applicant (claims and/or description) | 16.02.2012 | Examination requested [2012/25] | 18.04.2013 | Application withdrawn by applicant [2013/21] | Fees paid | Renewal fee | 10.07.2012 | Renewal fee patent year 03 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]RU2134007 (G PREDPRIJATIE NI, et al); | [A]JP2003078209 (FUJITSU LTD); | [A]RU2278455 (SHVEIKIN VASILY IVANOVICH); | [A]EP1906499 (OSRAM OPTO SEMICONDUCTORS GMBH [DE]) | by applicant | US4063189 | RU2197048 | RU2278455 |