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Extract from the Register of European Patents

EP About this file: EP2521177

EP2521177 - A METHOD OF PREPARING A SILICON-ON-SAPPHIRE SUBSTRATE [Right-click to bookmark this link]
Former [2012/45]SOS SUBSTRATE WITH REDUCED STRESS
[2019/33]
StatusNo opposition filed within time limit
Status updated on  27.11.2020
Database last updated on 11.09.2024
FormerThe patent has been granted
Status updated on  20.12.2019
FormerGrant of patent is intended
Status updated on  07.08.2019
Most recent event   Tooltip08.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 10.08.2022  [2022/32]
Applicant(s)For all designated states
Shin-Etsu Chemical Co., Ltd.
6-1, Ohtemachi 2-chome Chiyoda-ku
Tokyo 100-0004 / JP
[2012/45]
Inventor(s)01 / AKIYAMA, Shoji
c/o Advanced Functional Materials Research Center
SHIN-ETSU CHEMICAL CO. LTD.
13-1, Isobe 2-chome
Annaka-shi Gunma 379-0195 / JP
 [2012/45]
Representative(s)Vidon Brevets & Stratégie
16B, rue de Jouanet
BP 90333
35703 Rennes Cedex 7 / FR
[2020/04]
Former [2012/45]Larcher, Dominique
Cabinet Vidon, 16 B, rue Jouanet, BP 90333 Technopole Atalante
35703 Rennes Cedex 7 / FR
Application number, filing date10841002.827.12.2010
[2020/04]
WO2010JP73590
Priority number, dateJP2009029799428.12.2009         Original published format: JP 2009297994
[2012/45]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2011081146
Date:07.07.2011
Language:JA
[2011/27]
Type: A1 Application with search report 
No.:EP2521177
Date:07.11.2012
Language:EN
[2012/45]
Type: B1 Patent specification 
No.:EP2521177
Date:22.01.2020
Language:EN
[2020/04]
Search report(s)International search report - published on:JP07.07.2011
(Supplementary) European search report - dispatched on:EP28.04.2014
ClassificationIPC:H01L21/86, H01L21/762, H01L29/786
[2019/33]
CPC:
H01L21/86 (EP,KR,US); H01L27/1203 (KR); H01L21/76254 (EP,KR,US);
H01L29/78603 (EP,KR,US); H01L29/78657 (EP,KR,US)
Former IPC [2012/45]H01L27/12, H01L21/02, H01L21/336, H01L29/786
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2012/45]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES SILIZIUM-AUF-SAPPHIR SUBSTRATS[2019/33]
English:A METHOD OF PREPARING A SILICON-ON-SAPPHIRE SUBSTRATE[2019/33]
French:METHODE DE PREPARATION D'UN SUBSTRAT DE SILICIUM SUR SAPPHIRE[2019/33]
Former [2012/45]SOS-SUBSTRAT MIT REDUZIERTER BELASTUNG
Former [2012/45]SOS SUBSTRATE WITH REDUCED STRESS
Former [2012/45]SUBSTRAT SOS À CONTRAINTES RÉDUITES
Entry into regional phase26.06.2012Translation filed 
26.06.2012National basic fee paid 
26.06.2012Search fee paid 
26.06.2012Designation fee(s) paid 
26.06.2012Examination fee paid 
Examination procedure26.06.2012Examination requested  [2012/45]
14.11.2014Amendment by applicant (claims and/or description)
17.06.2016Despatch of a communication from the examining division (Time limit: M04)
19.10.2016Reply to a communication from the examining division
08.08.2019Communication of intention to grant the patent
19.11.2019Fee for grant paid
19.11.2019Fee for publishing/printing paid
19.11.2019Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  17.06.2016
Opposition(s)23.10.2020No opposition filed within time limit [2020/53]
Fees paidRenewal fee
31.12.2012Renewal fee patent year 03
12.12.2013Renewal fee patent year 04
11.12.2014Renewal fee patent year 05
10.12.2015Renewal fee patent year 06
13.12.2016Renewal fee patent year 07
12.12.2017Renewal fee patent year 08
12.12.2018Renewal fee patent year 09
13.12.2019Renewal fee patent year 10
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU27.12.2010
AL22.01.2020
AT22.01.2020
CY22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
MC22.01.2020
MK22.01.2020
MT22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
TR22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
[2022/31]
Former [2022/30]HU27.12.2010
AL22.01.2020
AT22.01.2020
CY22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
MC22.01.2020
MT22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
TR22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2022/27]HU27.12.2010
AT22.01.2020
CY22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
MC22.01.2020
MT22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
TR22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2022/26]AT22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
MC22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
TR22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2021/40]AT22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
MC22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2021/10]AT22.01.2020
CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
IT22.01.2020
LT22.01.2020
LV22.01.2020
NL22.01.2020
PL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SI22.01.2020
SK22.01.2020
SM22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/50]CZ22.01.2020
DK22.01.2020
EE22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
LT22.01.2020
LV22.01.2020
NL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SK22.01.2020
SM22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/49]CZ22.01.2020
DK22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
LT22.01.2020
LV22.01.2020
NL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SK22.01.2020
SM22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/48]DK22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
LT22.01.2020
LV22.01.2020
NL22.01.2020
RO22.01.2020
RS22.01.2020
SE22.01.2020
SM22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/47]DK22.01.2020
ES22.01.2020
FI22.01.2020
HR22.01.2020
LT22.01.2020
LV22.01.2020
NL22.01.2020
RS22.01.2020
SE22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/40]FI22.01.2020
HR22.01.2020
LV22.01.2020
NL22.01.2020
RS22.01.2020
SE22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
IS22.05.2020
PT14.06.2020
Former [2020/39]FI22.01.2020
HR22.01.2020
LV22.01.2020
NL22.01.2020
RS22.01.2020
SE22.01.2020
BG22.04.2020
NO22.04.2020
GR23.04.2020
PT14.06.2020
Former [2020/38]FI22.01.2020
HR22.01.2020
LV22.01.2020
NL22.01.2020
RS22.01.2020
SE22.01.2020
NO22.04.2020
GR23.04.2020
PT14.06.2020
Former [2020/37]FI22.01.2020
HR22.01.2020
LV22.01.2020
NL22.01.2020
RS22.01.2020
SE22.01.2020
NO22.04.2020
PT14.06.2020
Former [2020/36]FI22.01.2020
NL22.01.2020
RS22.01.2020
NO22.04.2020
PT14.06.2020
Former [2020/35]FI22.01.2020
NL22.01.2020
NO22.04.2020
Former [2020/33]NL22.01.2020
Documents cited:Search[I]EP1970942  (SHINETSU CHEMICAL CO [JP]) [I] 1-3* paragraph [0021] - paragraph [0042]; figures 1a-1h *;
 [XI]  - WANG Q-Y ET AL, "Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 280, no. 1-2, ISSN 0022-0248, (20050615), pages 222 - 226, (20050615), XP027850738 [X] 1,4,7,9 * paragraphs [3. Results] - [0and] - [discussion]; figures 1,2; table 1 * [I] 5,6,8
International search[Y]JP2003234455  (MATSUSHITA ELECTRIC IND CO LTD);
 [Y]JP2007214304  (SHINETSU CHEMICAL CO);
 [A]JP2009506540  (CORNING INC.);
 [X]  - JIBUTI ZV ET AL., "Photostimulated relaxation of internal mechanical stresses in epitaxial SOS structures", TECHNICAL PHYSICS, (200806), vol. 53, no. 6, pages 808 - 810, XP055108804

DOI:   http://dx.doi.org/10.1134/S106378420806025X
by applicant   - YOSHII ET AL., JAPANESE JOURNAL OF APPLIED PHYSICS, (1982), vol. 21, no. 21-1, pages 175 - 179
    - YUKIO YASUDA, APPLIED PHYSICS, (1976), vol. 45, page 1172
    - YAMICHI OMURA, APPLIED PHYSICS, (1980), vol. 49, page 110
    - J. APPL. PHYS., (1997), vol. 82, page 5262
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.