EP2369697 - Semiconductor laser element and method of manufacturing thereof [Right-click to bookmark this link] | |||
Former [2011/39] | Semiconductor laser element and method of manufacturing thereof | ||
[2019/11] | Status | No opposition filed within time limit Status updated on 03.07.2020 Database last updated on 24.08.2024 | |
Former | The patent has been granted Status updated on 24.05.2019 | ||
Former | Grant of patent is intended Status updated on 11.02.2019 | Most recent event Tooltip | 08.07.2022 | Lapse of the patent in a contracting state New state(s): MK | published on 10.08.2022 [2022/32] | Applicant(s) | For all designated states Nichia Corporation 491-100, Oka Kaminaka-cho Anan-shi Tokushima 774-8601 / JP | [2019/26] |
Former [2011/39] | For all designated states Nichia Corporation 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | Inventor(s) | 01 /
Sonobe, Shinya c/o Nichia Corporation 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | 02 /
Masui, Shingo c/o Nichia Corporation 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | 03 /
Miyoshi, Takashi c/o Nichia Corporation 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | [2013/42] |
Former [2011/39] | 01 /
Sonobe, Shinya c/o NICHIA CORPORATION 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | ||
02 /
Masui, Shingo c/o NICHIA CORPORATION 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | |||
03 /
Miyoshi, Takashi c/o NICHIA CORPORATION 491-100, Oka, Kaminaka-cho Anan-shi, Tokushima 774-8601 / JP | Representative(s) | Eisenführ Speiser Patentanwälte Rechtsanwälte PartGmbB Johannes-Brahms-Platz 1 20355 Hamburg / DE | [2019/26] |
Former [2011/39] | Eisenführ, Speiser & Partner Johannes-Brahms-Platz 1 20355 Hamburg / DE | Application number, filing date | 11159701.9 | 25.03.2011 | [2011/39] | Priority number, date | JP20100069021 | 25.03.2010 Original published format: JP 2010069021 | JP20110056239 | 15.03.2011 Original published format: JP 2011056239 | [2011/39] | Filing language | JA | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2369697 | Date: | 28.09.2011 | Language: | EN | [2011/39] | Type: | A3 Search report | No.: | EP2369697 | Date: | 13.03.2013 | Language: | EN | [2013/11] | Type: | B1 Patent specification | No.: | EP2369697 | Date: | 26.06.2019 | Language: | EN | [2019/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.02.2013 | Classification | IPC: | H01S5/22, H01S5/20, H01S5/042, B82Y20/00, H01S5/343, // H01S5/32 | [2019/08] | CPC: |
B82Y20/00 (EP,US);
H01S5/22 (EP,US);
H01S5/04254 (EP,US);
H01S2301/176 (EP,US);
H01S5/04252 (EP,US);
H01S5/2086 (EP,US);
H01S5/221 (EP,US);
H01S5/2214 (EP,US);
H01S5/222 (EP,US);
H01S5/320225 (EP,US);
H01S5/320275 (EP,US);
H01S5/3214 (EP,US);
H01S5/34333 (EP,US)
(-)
|
Former IPC [2013/11] | H01S5/22, H01S5/20, H01S5/042, // H01S5/32 | ||
Former IPC [2011/39] | H01S5/223, // H01S5/22 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2019/26] |
Former [2011/39] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Title | German: | Halbleiterlaserelement und Herstellungsverfahren dafür | [2011/39] | English: | Semiconductor laser element and method of manufacturing thereof | [2019/11] | French: | Élément laser semi-conducteur et son procédé de fabrication | [2011/39] |
Former [2011/39] | Semiconductor laser element and method of manufacturing thereof | Examination procedure | 09.09.2013 | Amendment by applicant (claims and/or description) | 13.09.2013 | Examination requested [2013/43] | 09.03.2016 | Despatch of a communication from the examining division (Time limit: M04) | 19.07.2016 | Reply to a communication from the examining division | 12.02.2019 | Communication of intention to grant the patent | 14.05.2019 | Fee for grant paid | 14.05.2019 | Fee for publishing/printing paid | 14.05.2019 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 09.03.2016 | Opposition(s) | 03.06.2020 | No opposition filed within time limit [2020/32] | Fees paid | Renewal fee | 02.04.2013 | Renewal fee patent year 03 | 31.03.2014 | Renewal fee patent year 04 | 10.03.2015 | Renewal fee patent year 05 | 10.03.2016 | Renewal fee patent year 06 | 10.03.2017 | Renewal fee patent year 07 | 13.03.2018 | Renewal fee patent year 08 | 13.03.2019 | Renewal fee patent year 09 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 25.03.2011 | AL | 26.06.2019 | AT | 26.06.2019 | CY | 26.06.2019 | CZ | 26.06.2019 | DK | 26.06.2019 | EE | 26.06.2019 | ES | 26.06.2019 | FI | 26.06.2019 | HR | 26.06.2019 | IT | 26.06.2019 | LT | 26.06.2019 | LV | 26.06.2019 | MC | 26.06.2019 | MK | 26.06.2019 | MT | 26.06.2019 | NL | 26.06.2019 | PL | 26.06.2019 | RO | 26.06.2019 | RS | 26.06.2019 | SE | 26.06.2019 | SI | 26.06.2019 | SK | 26.06.2019 | SM | 26.06.2019 | TR | 26.06.2019 | BG | 26.09.2019 | NO | 26.09.2019 | GR | 27.09.2019 | IS | 26.10.2019 | PT | 28.10.2019 | IE | 25.03.2020 | LU | 25.03.2020 | BE | 31.03.2020 | CH | 31.03.2020 | LI | 31.03.2020 | [2022/32] |
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NO | 26.09.2019 | Documents cited: | Search | [A]US5610413 (FAN YONGPING [US], et al) [A] 1-11 * column 20, lines 10-19; figures 1,2 * * column 10, lines 27-37 * * column 12, line 43 - column 13, line 60 *; | [A]JP2000076682 (SEIKO EPSON CORP) [A] 1-11 * figures 1,7,8 *; | [A]KR100363249B (SAMSUNG ELECTRONICS CO LTD) [A] 1-11* abstract *; | [A]US2006222030 (SAITOH KAZUNORI [JP], et al) [A] 1-11 * figure 1 *; | [A]JP2010016261 (SHARP KK) [A] 1-11 * paragraphs [0063] , [0064]; figure 1 *; | [XPA]WO2010108767 (OSRAM OPTO SEMICONDUCTORS GMBH [DE], et al) [XP] 1 * page 1, line 12 - page 4, line 15; figure 1 * [A] 2-11 | Examination | EP2262066 | by applicant | JPH0974249 | JP2006041491 | - CHIA-SHENG CHANG, "InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts", JPN. J. APPL. PHYS., (2003), vol. 42, doi:doi:10.1143/JJAP.42.3324, pages 3324 - 3327, XP001192021 DOI: http://dx.doi.org/10.1143/JJAP.42.3324 |