Extract from the Register of European Patents

EP About this file: EP2602828

EP2602828 - Semiconductor device having isolation trenches [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  26.02.2016
Database last updated on 28.02.2026
Most recent event   Tooltip26.02.2016Refusal of applicationpublished on 30.03.2016  [2016/13]
Applicant(s)For all designated states
NXP B.V.
High Tech Campus 60
5656 AG Eindhoven / NL
[2013/24]
Inventor(s)01 / Rutter, Phil
c/o NXP Semiconductors
Intellectual Property and Licensing
Betchworth House, 57-65 Station Road
Redhill Surrey RH1 1DL / GB
02 / Culshaw, Ian
c/o NXP Semiconductors
Intellectual Property and Licensing
Betchworth House, 57-65 Station Road
Redhill Surrey RH1 1DL / GB
03 / Peake, Steven
c/o NXP Semiconductors
Intellectual Property and Licensing
Betchworth House, 57-65 Station Road
Redhill Surrey RH1 1DL / GB
 [2013/24]
Representative(s)Crawford, Andrew
NXP B.V.
Intellectual Property & Licensing
Red Central
60 High Street
Redhill, Surrey RH1 1SH / GB
[N/P]
Former [2013/24]Crawford, Andrew
NXP Semiconductors
Intellectual Property and Licensing
Red Central
60 High Street
Redhill, Surrey RH1 1SH / GB
Application number, filing date11192471.807.12.2011
[2013/24]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2602828
Date:12.06.2013
Language:EN
[2013/24]
Search report(s)(Supplementary) European search report - dispatched on:EP21.06.2012
ClassificationIPC:H01L29/78, H01L29/739
[2013/24]
CPC:
H10D30/668 (EP,US); H10D12/481 (EP,US); H10D30/655 (EP,US);
H10D30/665 (EP,US); H10D62/116 (EP,US); H10D64/117 (EP,US);
H10D84/141 (EP,US); H10D84/151 (EP,US); H10D84/83 (US);
H10D64/256 (EP,US); H10D64/519 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2013/24]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:Halbleitervorrichtung mit Isolationsgräben[2013/24]
English:Semiconductor device having isolation trenches[2013/24]
French:Dispositif de semi-conducteur doté de tranchées d'isolation[2013/24]
Examination procedure28.09.2012Amendment by applicant (claims and/or description)
31.10.2013Examination requested  [2013/50]
12.12.2013Despatch of a communication from the examining division (Time limit: M04)
25.02.2014Reply to a communication from the examining division
24.03.2015Date of oral proceedings
02.04.2015Minutes of oral proceedings despatched
04.09.2015Cancellation of oral proceeding that was planned for 22.09.2015
22.09.2015Date of oral proceedings (cancelled)
12.11.2015Despatch of communication that the application is refused, reason: substantive examination [2016/13]
22.11.2015Application refused, date of legal effect [2016/13]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  12.12.2013
Fees paidRenewal fee
02.01.2014Renewal fee patent year 03
05.01.2015Renewal fee patent year 04
Penalty fee
Additional fee for renewal fee
31.12.201505   M06   Not yet paid
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Documents cited:Search[XYI] US2011233666  (LUI SIK et al.) [X] 1-4,6 * paragraph [0035] - paragraph [0036]; figures 5a,5b * * paragraph [0040]; figures 8A,8B * * paragraph [0050] - paragraph [0058]; figures 10A-10K *[Y] 7-14 [I] 5
 [IY] US2009032875  (KAWAGUCHI YUSUKE et al.) [I] 1,3,4,6 * paragraph [0019] - paragraph [0046]; figures 1-8 *[Y] 7,9
 [I] US2009321804  (MAUDER ANTON et al.) [I] 1,3,4,6 * paragraph [0057] - paragraph [0060]; figure 5 * * paragraph [0073] *
 [Y] US2008290407  (KUSUNOKI SHIGERU et al.) [Y] 7-14 * paragraph [0082] - paragraph [0111]; figures 1A-1C,2-5 * * paragraph [0365] *
 [A] US2009184373  (KAINDL WINFRIED et al.) [A] 1-14 * paragraph [0002] - paragraph [0004] * * paragraph [0054] - paragraph [0058]; figure 9 *
 [A] US2010276728  (HSIEH FU-YUAN et al.) [A] 1-14 * paragraph [0033]; figures 4, 5, 8 *
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