| EP2602828 - Semiconductor device having isolation trenches [Right-click to bookmark this link] | Status | The application has been refused Status updated on 26.02.2016 Database last updated on 28.02.2026 | Most recent event Tooltip | 26.02.2016 | Refusal of application | published on 30.03.2016 [2016/13] | Applicant(s) | For all designated states NXP B.V. High Tech Campus 60 5656 AG Eindhoven / NL | [2013/24] | Inventor(s) | 01 /
Rutter, Phil c/o NXP Semiconductors Intellectual Property and Licensing Betchworth House, 57-65 Station Road Redhill Surrey RH1 1DL / GB | 02 /
Culshaw, Ian c/o NXP Semiconductors Intellectual Property and Licensing Betchworth House, 57-65 Station Road Redhill Surrey RH1 1DL / GB | 03 /
Peake, Steven c/o NXP Semiconductors Intellectual Property and Licensing Betchworth House, 57-65 Station Road Redhill Surrey RH1 1DL / GB | [2013/24] | Representative(s) | Crawford, Andrew NXP B.V. Intellectual Property & Licensing Red Central 60 High Street Redhill, Surrey RH1 1SH / GB | [N/P] |
| Former [2013/24] | Crawford, Andrew NXP Semiconductors Intellectual Property and Licensing Red Central 60 High Street Redhill, Surrey RH1 1SH / GB | Application number, filing date | 11192471.8 | 07.12.2011 | [2013/24] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2602828 | Date: | 12.06.2013 | Language: | EN | [2013/24] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 21.06.2012 | Classification | IPC: | H01L29/78, H01L29/739 | [2013/24] | CPC: |
H10D30/668 (EP,US);
H10D12/481 (EP,US);
H10D30/655 (EP,US);
H10D30/665 (EP,US);
H10D62/116 (EP,US);
H10D64/117 (EP,US);
H10D84/141 (EP,US);
H10D84/151 (EP,US);
H10D84/83 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2013/24] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Halbleitervorrichtung mit Isolationsgräben | [2013/24] | English: | Semiconductor device having isolation trenches | [2013/24] | French: | Dispositif de semi-conducteur doté de tranchées d'isolation | [2013/24] | Examination procedure | 28.09.2012 | Amendment by applicant (claims and/or description) | 31.10.2013 | Examination requested [2013/50] | 12.12.2013 | Despatch of a communication from the examining division (Time limit: M04) | 25.02.2014 | Reply to a communication from the examining division | 24.03.2015 | Date of oral proceedings | 02.04.2015 | Minutes of oral proceedings despatched | 04.09.2015 | Cancellation of oral proceeding that was planned for 22.09.2015 | 22.09.2015 | Date of oral proceedings (cancelled) | 12.11.2015 | Despatch of communication that the application is refused, reason: substantive examination [2016/13] | 22.11.2015 | Application refused, date of legal effect [2016/13] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 12.12.2013 | Fees paid | Renewal fee | 02.01.2014 | Renewal fee patent year 03 | 05.01.2015 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 31.12.2015 | 05   M06   Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI] US2011233666 (LUI SIK et al.) [X] 1-4,6 * paragraph [0035] - paragraph [0036]; figures 5a,5b * * paragraph [0040]; figures 8A,8B * * paragraph [0050] - paragraph [0058]; figures 10A-10K *[Y] 7-14 [I] 5 | [IY] US2009032875 (KAWAGUCHI YUSUKE et al.) [I] 1,3,4,6 * paragraph [0019] - paragraph [0046]; figures 1-8 *[Y] 7,9 | [I] US2009321804 (MAUDER ANTON et al.) [I] 1,3,4,6 * paragraph [0057] - paragraph [0060]; figure 5 * * paragraph [0073] * | [Y] US2008290407 (KUSUNOKI SHIGERU et al.) [Y] 7-14 * paragraph [0082] - paragraph [0111]; figures 1A-1C,2-5 * * paragraph [0365] * | [A] US2009184373 (KAINDL WINFRIED et al.) [A] 1-14 * paragraph [0002] - paragraph [0004] * * paragraph [0054] - paragraph [0058]; figure 9 * | [A] US2010276728 (HSIEH FU-YUAN et al.) [A] 1-14 * paragraph [0033]; figures 4, 5, 8 * |