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EP2599132
European procedure
Extract from the Register of European Patents
EP Citations: EP2599132
| Cited in | International search | Type: | Patent literature | Publication No.: | US2009026476
[XA] (TAZIMA MIKIO [JP], et al) [X] 13-17 * paragraph [0038] - paragraph [0048]; figures 3a-9 * [A] 1-8; | Type: | Patent literature | Publication No.: | US2010120237
[XY] (TANAKA SHINICHI [JP], et al) [X] 9,12 * paragraphs [0004] , [0005] , [0019] - [0022] - [0028] , [0030]; figures 3a-4 * [Y] 10,11; | Type: | Patent literature | Publication No.: | DE19652471
[Y] (INST OBERFLAECHENMODIFIZIERUNG [DE]) [Y] 10,11 * page 1, line 10 - line 40 *; | Type: | Patent literature | Publication No.: | CA2024134
[Y] (AMERICAN TELEPHONE & TELEGRAPH [US]) [Y] 10,11 * page 1, line 30 - page 2, line 10; claim 1 *; | Type: | Non-patent literature | Publication information: | [XI] - CHIU C H ET AL, "Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands", NANOTECHNOLOGY, IOP, BRISTOL, GB, (20071107), vol. 18, no. 44, ISSN 0957-4484, page 445201, XP020129422 [X] 1-3,7,8,13-17 * page 2, column 1; figure 1 * [I] 4-6 | Type: | Non-patent literature | Publication information: | [A] - CHAO C ET AL, "Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20090804), vol. 95, no. 5, doi:10.1063/1.3195684, ISSN 0003-6951, pages 1 - 3, XP012122531 [A] 1 * the whole document * | DOI: | http://dx.doi.org/10.1063/1.3195684 | Type: | Non-patent literature | Publication information: | [A] - I. ADESIDA ET AL, "Dry and Wet Etching for Group III - Nitrides", MRS PROCEEDINGS, (19980101), vol. 537, doi:10.1557/PROC-537-G1.4, ISSN 0272-9172, page 11PP, XP055010355 [A] 1 * the whole document * | DOI: | http://dx.doi.org/10.1557/PROC-537-G1.4 | Cited in | by applicant | Type: | Patent literature | Publication No.: | WO2010GB50992
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