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EP2615629
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| EP2615629 - EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 31.10.2014 Database last updated on 26.07.2024 | Most recent event Tooltip | 31.10.2014 | Withdrawal of application | published on 03.12.2014 [2014/49] | Applicant(s) | For all designated states NGK Insulators, Ltd. 2-56, Suda-cho Mizuho-ku Nagoya-shi, Aichi 467-8530 / JP | [2013/29] | Inventor(s) | 01 /
MIYOSHI Makoto 1-11-33, Konomiya Inazawa-shi Aichi 492-8137 / JP | 02 /
ICHIMURA Mikiya c/o NGK INSULATORS LTD. 2-56, Suda-cho Mizuho-ku Nagoya-shi Aichi 467-8530 / JP | 03 /
MAEHARA Sota c/o NGK INSULATORS LTD. 2-56, Suda-cho Mizuho-ku Nagoya-shi Aichi 467-8530 / JP | 04 /
TANAKA Mitsuhiro 3-7-21, Kasuga Tsukuba-shi Ibaraki 3050821 / JP | [2013/29] | Representative(s) | Naylor, Matthew John, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB | [N/P] |
| Former [2013/29] | Naylor, Matthew John, et al Mewburn Ellis LLP 33 Gutter Lane London EC2V 8AS / GB | Application number, filing date | 11823394.9 | 19.08.2011 | WO2011JP68743 | Priority number, date | JP20100203062 | 10.09.2010 Original published format: JP 2010203062 | [2013/29] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2012032915 | Date: | 15.03.2012 | Language: | JA | [2012/11] | Type: | A1 Application with search report | No.: | EP2615629 | Date: | 17.07.2013 | Language: | EN | [2013/29] | Search report(s) | International search report - published on: | JP | 15.03.2012 | (Supplementary) European search report - dispatched on: | EP | 23.01.2014 | Classification | IPC: | H01L21/205, C23C16/34, C30B23/02, C30B25/18, C30B29/40, C23C16/30 | [2014/09] | CPC: |
C23C16/303 (EP,KR,US);
C30B29/403 (EP,KR,US);
H01L29/0661 (US);
C30B23/025 (EP,KR,US);
C30B25/183 (EP,KR,US);
H01L21/02365 (US);
H01L21/02381 (EP,US);
H01L21/02433 (EP,US);
H01L21/02439 (EP,US);
H01L21/02458 (EP,US);
H01L21/02494 (EP,US);
H01L21/02507 (EP,KR,US);
H01L21/02516 (EP,KR,US);
H01L21/0254 (EP,US);
H01L21/0262 (EP,KR,US);
H01L29/155 (EP,US);
H01L29/778 (KR);
H01L29/812 (KR);
H01L29/2003 (EP,US)
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|
| Former IPC [2013/29] | H01L21/205, C23C16/34, H01L21/338, H01L29/778, H01L29/812 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2013/29] | Title | German: | EPITAKTISCHES SUBSTRAT FÜR EIN HALBLEITERELEMENT, VERFAHREN ZUR HERSTELLUNG DES EPITAKTISCHEN SUBSTRATS FÜR EIN HALBLEITERELEMENT UND HALBLEITERELEMENT | [2013/29] | English: | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT | [2013/29] | French: | SUBSTRAT ÉPITAXIAL POUR ÉLÉMENT À SEMI-CONDUCTEURS, PROCÉDÉ DE PRODUCTION DE SUBSTRAT ÉPITAXIAL POUR ÉLÉMENT À SEMI-CONDUCTEURS, ET ÉLÉMENT À SEMI-CONDUCTEURS | [2013/29] | Entry into regional phase | 08.03.2013 | Translation filed | 11.03.2013 | National basic fee paid | 11.03.2013 | Search fee paid | 11.03.2013 | Designation fee(s) paid | 11.03.2013 | Examination fee paid | Examination procedure | 11.03.2013 | Examination requested [2013/29] | 19.08.2014 | Amendment by applicant (claims and/or description) | 28.10.2014 | Application withdrawn by applicant [2014/49] | Fees paid | Renewal fee | 20.08.2013 | Renewal fee patent year 03 | 26.08.2014 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI]US2006191474 (CHEN PENG [SG], et al) [X] 1 * paragraph [0043] - paragraph [0075]; figure 3 * [Y] 2,3,8,9 [I] 4-7,10-13; | [Y] - FENWICK W E ET AL, "MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 311, no. 18, doi:10.1016/J.JCRYSGRO.2009.07.022, ISSN 0022-0248, (20090901), pages 4306 - 4310, (20090719), XP026525274 [Y] 2,3,8,9 * abstract * DOI: http://dx.doi.org/10.1016/j.jcrysgro.2009.07.022 | International search | [A]JPH09275226 (MATSUSHITA ELECTRIC IND CO LTD); | [A]JP2000311863 (MATSUSHITA ELECTRONICS CORP); | [A]JP2006005331 (SUMITOMO ELECTRIC INDUSTRIES); | [A]WO2009102033 (MITSUBISHI CHEM CORP [JP], et al) | by applicant | - TOSHIHIDE KIKKAWA, "Highly Reliable 250W GaN High Electron Mobility Transistor Power Amplifier", JPN. J. APPL. PHYS., (2005), vol. 44, doi:doi:10.1143/JJAP.44.4896, pages 4896 - 4901, XP001502263 DOI: http://dx.doi.org/10.1143/JJAP.44.4896 | - NARIAKI IKEDA; SYUUSUKE KAYA; JIANG LI; YOSHIHIRO SATO; SADAHIRO KATO; SEIKOH YOSHIDA, "High power AIGaN/GaN HFET with a high breakdown voltage of over 1.8kV on 4 inch Si substrates and the suppression of current collapse", PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S, (20080518), pages 287 - 290, XP031269992 |