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Extract from the Register of European Patents

EP About this file: EP2657375

EP2657375 - SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.06.2019
Database last updated on 20.09.2024
FormerThe patent has been granted
Status updated on  06.07.2018
FormerGrant of patent is intended
Status updated on  25.02.2018
FormerExamination is in progress
Status updated on  26.05.2017
Most recent event   Tooltip01.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 03.08.2022  [2022/31]
Applicant(s)For all designated states
Toyo Tanso Co., Ltd.
5-7-12, Takeshima Nishiyodogawa-ku Osaka-shi
Osaka 555-0011 / JP
[2013/44]
Inventor(s)01 / TORIMI, Satoshi
c/o TOYO TANSO CO. LTD.
2181-2 Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
02 / NOGAMI, Satoru
c/o TOYO TANSO CO., LTD.
2181-2, Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
03 / MATSUMOTO, Tsuyoshi
c/o TOYO TANSO CO., LTD.
2181-2, Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
 [2018/32]
Former [2013/44]01 / TORIMI, Satoshi
c/o TOYO TANSO CO. LTD.
2181-2 Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
02 / NOGAMI, Satoru
c/o TOYO TANSO CO. LTD.
2181-2 Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
03 / MATSUMOTO, Tsuyoshi
c/o TOYO TANSO CO. LTD.
2181-2 Nakahime
Ohnohara-cho
Kanonji-shi, Kagawa 769-1612 / JP
Representative(s)Ter Meer Steinmeister & Partner
Patentanwälte mbB
Nymphenburger Straße 4
80335 München / DE
[2018/32]
Former [2013/44]Aechter, Bernd
Ter Meer Steinmeister & Partner
Mauerkircherstraße 45
81679 München / DE
Application number, filing date11850722.729.06.2011
[2018/32]
WO2011JP64876
Priority number, dateJP2010028846724.12.2010         Original published format: JP 2010288467
JP2010028847024.12.2010         Original published format: JP 2010288470
JP2010028847324.12.2010         Original published format: JP 2010288473
JP2010028847724.12.2010         Original published format: JP 2010288477
[2013/44]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2012086238
Date:28.06.2012
Language:JA
[2012/26]
Type: A1 Application with search report 
No.:EP2657375
Date:30.10.2013
Language:EN
[2013/44]
Type: B1 Patent specification 
No.:EP2657375
Date:08.08.2018
Language:EN
[2018/32]
Search report(s)International search report - published on:JP28.06.2012
(Supplementary) European search report - dispatched on:EP03.04.2014
ClassificationIPC:C30B29/36, C30B19/12, C30B28/14
[2014/19]
CPC:
C30B19/12 (EP,KR,US); C30B28/14 (EP,US); C30B29/36 (EP,KR,US);
H01L21/20 (KR); Y10T428/26 (EP,US)
Former IPC [2013/44]C30B29/36, C30B19/12
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2013/44]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:KRISTALLISATIONSKEIM ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID UND VERFAHREN ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID[2018/12]
English:SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE[2013/44]
French:SUBSTANCE DE GERME POUR CROISSANCE ÉPITAXIALE EN PHASE LIQUIDE DU CARBURE DE SILICIUM MONOCRISTALLIN, ET PROCÉDÉ DE CROISSANCE ÉPITAXIALE EN PHASE LIQUIDE DU CARBURE DE SILICIUM MONOCRISTALLIN[2013/44]
Former [2013/44]SAMENMATERIAL ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID UND VERFAHREN ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID
Entry into regional phase21.06.2013Translation filed 
21.06.2013National basic fee paid 
21.06.2013Search fee paid 
21.06.2013Designation fee(s) paid 
21.06.2013Examination fee paid 
Examination procedure21.06.2013Examination requested  [2013/44]
24.10.2014Amendment by applicant (claims and/or description)
29.05.2017Despatch of a communication from the examining division (Time limit: M04)
13.09.2017Reply to a communication from the examining division
13.10.2017Despatch of a communication from the examining division (Time limit: M04)
31.01.2018Reply to a communication from the examining division
26.02.2018Communication of intention to grant the patent
05.06.2018Fee for grant paid
05.06.2018Fee for publishing/printing paid
05.06.2018Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  29.05.2017
Opposition(s)09.05.2019No opposition filed within time limit [2019/29]
Fees paidRenewal fee
28.06.2013Renewal fee patent year 03
31.03.2014Renewal fee patent year 04
19.06.2015Renewal fee patent year 05
10.06.2016Renewal fee patent year 06
12.06.2017Renewal fee patent year 07
29.06.2018Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU29.06.2011
AL08.08.2018
AT08.08.2018
CY08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
MK08.08.2018
MT08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
PT08.12.2018
[2022/31]
Former [2021/34]HU29.06.2011
AL08.08.2018
AT08.08.2018
CY08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
MT08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
PT08.12.2018
Former [2021/32]HU29.06.2011
AL08.08.2018
AT08.08.2018
CY08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
PT08.12.2018
Former [2021/26]AL08.08.2018
AT08.08.2018
CY08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
PT08.12.2018
Former [2020/29]AL08.08.2018
AT08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
PT08.12.2018
Former [2020/16]AL08.08.2018
AT08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
TR08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2020/08]AL08.08.2018
AT08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
MC08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/37]AL08.08.2018
AT08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SI08.08.2018
SK08.08.2018
SM08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/26]AL08.08.2018
AT08.08.2018
CZ08.08.2018
DK08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SK08.08.2018
SM08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/23]AL08.08.2018
AT08.08.2018
CZ08.08.2018
EE08.08.2018
ES08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
SK08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/22]AL08.08.2018
AT08.08.2018
CZ08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
NL08.08.2018
PL08.08.2018
RO08.08.2018
RS08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/12]AL08.08.2018
AT08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
LV08.08.2018
NL08.08.2018
PL08.08.2018
RS08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/11]AT08.08.2018
FI08.08.2018
HR08.08.2018
LT08.08.2018
NL08.08.2018
PL08.08.2018
RS08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/10]AT08.08.2018
FI08.08.2018
LT08.08.2018
NL08.08.2018
PL08.08.2018
RS08.08.2018
BG08.11.2018
NO08.11.2018
GR09.11.2018
IS08.12.2018
Former [2019/09]FI08.08.2018
LT08.08.2018
NL08.08.2018
NO08.11.2018
IS08.12.2018
Former [2019/08]FI08.08.2018
LT08.08.2018
NO08.11.2018
IS08.12.2018
Former [2019/07]LT08.08.2018
Documents cited:Search[X]JPS55144499  (SHARP KK) [X] 1-3,7-12 * page 502, column 1, paragraph 1; figure 3 *;
 [A]US5879450  (LEE SHUIT TONG [HK], et al) [A] 1* example 2 *;
 [X]  - CHINONE Y ET AL, "APPLICATIONS OF HIGH PURITY SIC PREPARED BY CHEMICAL VAPOR DEPOSITION", SPRINGER PROCEEDINGS IN PHYSICS, SPRINGER VERLAG, BERLIN, DE, (19890101), vol. 43, ISSN 0930-8989, pages 198 - 206, XP000617080 [X] 1-11 * abstract *
 [X]  - GEORGE V C ET AL, "Bias enhanced deposition of highly oriented beta-SiC thin films using low pressure hot filament chemical vapour deposition technique", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, (20021101), vol. 419, no. 1-2, doi:10.1016/S0040-6090(02)00789-7, ISSN 0040-6090, pages 114 - 117, XP004391117 [X] 1-3,7-9,11 * page 116, column 1, paragraph 2; figures 1,3 *

DOI:   http://dx.doi.org/10.1016/S0040-6090(02)00789-7
International search[A]JPH0455397  (MITSUI SHIPBUILDING ENG);
 [A]JP2000044398  (TOYOTA CENTRAL RES & DEV, et al);
 [A]JP2000160343  (TOYO TANSO CO);
 [A]JP2001107239  (TOKYO ELECTRON LTD, et al);
 [A]  - S. R. NISHITANI ET AL., "Metastable solvent epitaxy of SiC", JOURNAL OF CRYSTAL GROWTH, (2008), vol. 310, pages 1815 - 1818, XP022587697

DOI:   http://dx.doi.org/10.1016/j.jcrysgro.2007.11.234
 [A]  - A. J. STECKL ET AL., "Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane", APPLIED PHYSICS LETTERS, (19961216), vol. 69, no. 25, pages 3824 - 3826, XP000643667

DOI:   http://dx.doi.org/10.1063/1.117117
by applicantJP2005097040
 JP2005132711
 JP2008230946
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.