| EP2595126 - Alarm for use in the nuclear field with a heating system for heating semiconductor elements that are not typically radiation resistant to improve functional service life [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.01.2020 Database last updated on 26.03.2026 | |
| Former | The patent has been granted Status updated on 01.02.2019 | ||
| Former | Grant of patent is intended Status updated on 10.10.2018 | ||
| Former | Examination is in progress Status updated on 06.07.2018 | ||
| Former | Grant of patent is intended Status updated on 25.06.2018 | Most recent event Tooltip | 08.07.2022 | Lapse of the patent in a contracting state New state(s): MK | published on 10.08.2022 [2022/32] | Applicant(s) | For all designated states Siemens Schweiz AG Freilagerstrasse 40 8047 Zürich / CH | [2015/04] |
| Former [2013/21] | For all designated states Siemens Aktiengesellschaft Wittelsbacherplatz 2 80333 München / DE | Inventor(s) | 01 /
Aebersold, Hans Bucheneggstr. 10 8906 Bonstetten / CH | 02 /
Arnold, Martin Grindelmatt 17 5630 Muri / CH | [2013/21] | Representative(s) | Maier, Daniel Oliver, et al Siemens AG Intellectual Property Postfach 22 16 34 80506 München / DE | [N/P] |
| Former [2014/33] | Maier, Daniel Oliver, et al Siemens AG Postfach 22 16 34 80506 München / DE | Application number, filing date | 12153395.4 | 31.01.2012 | [2013/21] | Priority number, date | DE20111086424 | 15.11.2011 Original published format: DE102011086424 | [2013/21] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP2595126 | Date: | 22.05.2013 | Language: | DE | [2013/21] | Type: | B1 Patent specification | No.: | EP2595126 | Date: | 06.03.2019 | Language: | DE | [2019/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.05.2012 | Classification | IPC: | G08B17/10, G08B29/00 | [2013/21] | CPC: |
G08B17/10 (EP,US);
H10F77/00 (US);
G08B17/113 (EP,US);
G08B21/182 (US);
G08B29/00 (EP,US);
H10D89/60 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2019/10] |
| Former [2013/21] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Title | German: | Gefahrenmelder zum Betrieb im Nuklearbereich, mit einer Heizung zum Beheizen typischerweise nichtstrahlungsfester Halbleiterbauelemente zur Erhöhung der funktionalen Lebensdauer | [2013/21] | English: | Alarm for use in the nuclear field with a heating system for heating semiconductor elements that are not typically radiation resistant to improve functional service life | [2013/21] | French: | Dispositif d'alarme pour le fonctionnement dans le domaine nucléaire, doté d'un chauffage pour chauffer des composants semi-conducteurs typiquement non résistant aux rayonnements pour l'augmentation de la durée de vie fonctionnelle | [2013/21] | Examination procedure | 21.11.2013 | Examination requested [2014/01] | 22.11.2013 | Amendment by applicant (claims and/or description) | 01.04.2016 | Despatch of a communication from the examining division (Time limit: M04) | 11.08.2016 | Reply to a communication from the examining division | 02.06.2018 | Cancellation of oral proceeding that was planned for 05.06.2018 | 05.06.2018 | Date of oral proceedings (cancelled) | 26.06.2018 | Communication of intention to grant the patent | 03.07.2018 | Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO | 11.10.2018 | Communication of intention to grant the patent | 03.01.2019 | Receipt of the translation of the claim(s) | 04.01.2019 | Fee for grant paid | 04.01.2019 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 01.04.2016 | Opposition(s) | 09.12.2019 | No opposition filed within time limit [2020/07] | Fees paid | Renewal fee | 20.01.2014 | Renewal fee patent year 03 | 19.01.2015 | Renewal fee patent year 04 | 20.01.2016 | Renewal fee patent year 05 | 20.01.2017 | Renewal fee patent year 06 | 19.01.2018 | Renewal fee patent year 07 | 18.01.2019 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 31.01.2012 | AL | 06.03.2019 | CY | 06.03.2019 | CZ | 06.03.2019 | DK | 06.03.2019 | EE | 06.03.2019 | ES | 06.03.2019 | FI | 06.03.2019 | HR | 06.03.2019 | IT | 06.03.2019 | LT | 06.03.2019 | LV | 06.03.2019 | MC | 06.03.2019 | MK | 06.03.2019 | MT | 06.03.2019 | PL | 06.03.2019 | RO | 06.03.2019 | RS | 06.03.2019 | SI | 06.03.2019 | SK | 06.03.2019 | SM | 06.03.2019 | TR | 06.03.2019 | BG | 06.06.2019 | NO | 06.06.2019 | GR | 07.06.2019 | IS | 06.07.2019 | PT | 06.07.2019 | [2022/32] |
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| NO | 06.06.2019 | Documents cited: | Search | [IA] US5270551 (KAMIMURA HIROSHI et al.) [I] 1,2,4-13 * figure 6 * * the whole document *[A] 3 | [A] SAIGNSAIGNE F ET AL: "Experimental Procedure to Predict the Competition Between the Degradation Induced by Irradiation and Thermal Annealing of Oxide Trapped Charge in MOSFETs", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 47, no. 6, 1 December 2000 (2000-12-01), XP011041893, ISSN: 0018-9499 [A] 1-13 * the whole document * | [A] DUSSEAU L ET AL: "Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 81, no. 5, 1 March 1997 (1997-03-01), pages 2437, XP012041683, ISSN: 0021-8979, DOI: 10.1063/1.364251 [A] 1-13 * the whole document * DOI: http://dx.doi.org/10.1063/1.364251 | [A] SAIGNSAIGNE F ET AL: "Prediction of the One-Year Thermal Annealing of Irradiated Commercial Devices Based on Experimental Isochronal Curves", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 47, no. 6, 1 December 2000 (2000-12-01), XP011041894, ISSN: 0018-9499 [A] 1-13 * the whole document * | [A] ELMAATI BENDADA ET AL: "Annealing of Irradiated-Induced defects in power MOSFETs", MICROELECTRONICS (ICM), 2009 INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 19 December 2009 (2009-12-19), pages 236 - 239, XP031631884, ISBN: 978-1-4244-5814-1 [A] 1-13 * the whole document * | [A] OHYAMA H ET AL: "Radiation source dependence of device performance degradation for 4H-SiC MESFETs", SUPERLATTICES AND MICROSTRUCTURES, ACADEMIC PRESS, LONDON, GB, vol. 40, no. 4-6, 1 October 2006 (2006-10-01), pages 632 - 637, XP024904903, ISSN: 0749-6036, [retrieved on 20061001], DOI: 10.1016/J.SPMI.2006.09.009 [A] 1-13 * the whole document * DOI: http://dx.doi.org/10.1016/j.spmi.2006.09.009 | [A] VITALY DANCHENKO ET AL: "Activation Energies of Thermal Annealing of Radiation-Induced Damage in N- and P-Channels of CMOS Integrated Circuits", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 27, no. 6, 1 January 1980 (1980-01-01), pages 1658 - 1664, XP055024634, ISSN: 0018-9499, DOI: 10.1109/TNS.1980.4331085 [A] 1-13 * the whole document * DOI: http://dx.doi.org/10.1109/TNS.1980.4331085 | [A] VITALY DANCHENKO ET AL: "Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 28, no. 6, 1 January 1981 (1981-01-01), pages 4407 - 4412, XP055024636, ISSN: 0018-9499, DOI: 10.1109/TNS.1981.4335739 [A] 1-13 * Abschnitt "Isothermal Annealing" * DOI: http://dx.doi.org/10.1109/TNS.1981.4335739 | Examination | XLAO-RUL TIAN ET AL: "Satellite remote-sensing technologies used in forest fire management", JOURNAL OF FORESTRY RESEARCH, vol. 16, 1 January 2005 (2005-01-01), pages 73 - 78, XP055259190 [A] 3 |