Extract from the Register of European Patents

EP About this file: EP2595126

EP2595126 - Alarm for use in the nuclear field with a heating system for heating semiconductor elements that are not typically radiation resistant to improve functional service life [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  10.01.2020
Database last updated on 26.03.2026
FormerThe patent has been granted
Status updated on  01.02.2019
FormerGrant of patent is intended
Status updated on  10.10.2018
FormerExamination is in progress
Status updated on  06.07.2018
FormerGrant of patent is intended
Status updated on  25.06.2018
Most recent event   Tooltip08.07.2022Lapse of the patent in a contracting state
New state(s): MK
published on 10.08.2022  [2022/32]
Applicant(s)For all designated states
Siemens Schweiz AG
Freilagerstrasse 40
8047 Zürich / CH
[2015/04]
Former [2013/21]For all designated states
Siemens Aktiengesellschaft
Wittelsbacherplatz 2
80333 München / DE
Inventor(s)01 / Aebersold, Hans
Bucheneggstr. 10
8906 Bonstetten / CH
02 / Arnold, Martin
Grindelmatt 17
5630 Muri / CH
 [2013/21]
Representative(s)Maier, Daniel Oliver, et al
Siemens AG
Intellectual Property
Postfach 22 16 34
80506 München / DE
[N/P]
Former [2014/33]Maier, Daniel Oliver, et al
Siemens AG
Postfach 22 16 34
80506 München / DE
Application number, filing date12153395.431.01.2012
[2013/21]
Priority number, dateDE2011108642415.11.2011         Original published format: DE102011086424
[2013/21]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP2595126
Date:22.05.2013
Language:DE
[2013/21]
Type: B1 Patent specification 
No.:EP2595126
Date:06.03.2019
Language:DE
[2019/10]
Search report(s)(Supplementary) European search report - dispatched on:EP03.05.2012
ClassificationIPC:G08B17/10, G08B29/00
[2013/21]
CPC:
G08B17/10 (EP,US); H10F77/00 (US); G08B17/113 (EP,US);
G08B21/182 (US); G08B29/00 (EP,US); H10D89/60 (EP,US);
G08B17/103 (EP,US); G08B17/107 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/10]
Former [2013/21]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:Gefahrenmelder zum Betrieb im Nuklearbereich, mit einer Heizung zum Beheizen typischerweise nichtstrahlungsfester Halbleiterbauelemente zur Erhöhung der funktionalen Lebensdauer[2013/21]
English:Alarm for use in the nuclear field with a heating system for heating semiconductor elements that are not typically radiation resistant to improve functional service life[2013/21]
French:Dispositif d'alarme pour le fonctionnement dans le domaine nucléaire, doté d'un chauffage pour chauffer des composants semi-conducteurs typiquement non résistant aux rayonnements pour l'augmentation de la durée de vie fonctionnelle[2013/21]
Examination procedure21.11.2013Examination requested  [2014/01]
22.11.2013Amendment by applicant (claims and/or description)
01.04.2016Despatch of a communication from the examining division (Time limit: M04)
11.08.2016Reply to a communication from the examining division
02.06.2018Cancellation of oral proceeding that was planned for 05.06.2018
05.06.2018Date of oral proceedings (cancelled)
26.06.2018Communication of intention to grant the patent
03.07.2018Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
11.10.2018Communication of intention to grant the patent
03.01.2019Receipt of the translation of the claim(s)
04.01.2019Fee for grant paid
04.01.2019Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  01.04.2016
Opposition(s)09.12.2019No opposition filed within time limit [2020/07]
Fees paidRenewal fee
20.01.2014Renewal fee patent year 03
19.01.2015Renewal fee patent year 04
20.01.2016Renewal fee patent year 05
20.01.2017Renewal fee patent year 06
19.01.2018Renewal fee patent year 07
18.01.2019Renewal fee patent year 08
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Lapses during opposition  TooltipHU31.01.2012
AL06.03.2019
CY06.03.2019
CZ06.03.2019
DK06.03.2019
EE06.03.2019
ES06.03.2019
FI06.03.2019
HR06.03.2019
IT06.03.2019
LT06.03.2019
LV06.03.2019
MC06.03.2019
MK06.03.2019
MT06.03.2019
PL06.03.2019
RO06.03.2019
RS06.03.2019
SI06.03.2019
SK06.03.2019
SM06.03.2019
TR06.03.2019
BG06.06.2019
NO06.06.2019
GR07.06.2019
IS06.07.2019
PT06.07.2019
[2022/32]
Former [2022/27]HU31.01.2012
AL06.03.2019
CY06.03.2019
CZ06.03.2019
DK06.03.2019
EE06.03.2019
ES06.03.2019
FI06.03.2019
HR06.03.2019
IT06.03.2019
LT06.03.2019
LV06.03.2019
MC06.03.2019
MT06.03.2019
PL06.03.2019
RO06.03.2019
RS06.03.2019
SI06.03.2019
SK06.03.2019
SM06.03.2019
TR06.03.2019
BG06.06.2019
NO06.06.2019
GR07.06.2019
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PT06.07.2019
Former [2020/39]AL06.03.2019
CZ06.03.2019
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SM06.03.2019
TR06.03.2019
BG06.06.2019
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PT06.07.2019
Former [2020/17]AL06.03.2019
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HR06.03.2019
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TR06.03.2019
BG06.06.2019
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GR07.06.2019
IS06.07.2019
PT06.07.2019
Former [2020/13]AL06.03.2019
CZ06.03.2019
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EE06.03.2019
ES06.03.2019
FI06.03.2019
HR06.03.2019
IT06.03.2019
LT06.03.2019
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SI06.03.2019
SK06.03.2019
SM06.03.2019
BG06.06.2019
NO06.06.2019
GR07.06.2019
IS06.07.2019
PT06.07.2019
Former [2020/09]AL06.03.2019
CZ06.03.2019
DK06.03.2019
EE06.03.2019
ES06.03.2019
FI06.03.2019
HR06.03.2019
IT06.03.2019
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SM06.03.2019
BG06.06.2019
NO06.06.2019
GR07.06.2019
IS06.07.2019
PT06.07.2019
Former [2020/04]AL06.03.2019
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Former [2019/49]AL06.03.2019
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Former [2019/37]FI06.03.2019
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Former [2019/33]FI06.03.2019
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 [A]   SAIGNSAIGNE F ET AL: "Experimental Procedure to Predict the Competition Between the Degradation Induced by Irradiation and Thermal Annealing of Oxide Trapped Charge in MOSFETs", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 47, no. 6, 1 December 2000 (2000-12-01), XP011041893, ISSN: 0018-9499 [A] 1-13 * the whole document *
 [A]   DUSSEAU L ET AL: "Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 81, no. 5, 1 March 1997 (1997-03-01), pages 2437, XP012041683, ISSN: 0021-8979, DOI: 10.1063/1.364251 [A] 1-13 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.364251
 [A]   SAIGNSAIGNE F ET AL: "Prediction of the One-Year Thermal Annealing of Irradiated Commercial Devices Based on Experimental Isochronal Curves", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 47, no. 6, 1 December 2000 (2000-12-01), XP011041894, ISSN: 0018-9499 [A] 1-13 * the whole document *
 [A]   ELMAATI BENDADA ET AL: "Annealing of Irradiated-Induced defects in power MOSFETs", MICROELECTRONICS (ICM), 2009 INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 19 December 2009 (2009-12-19), pages 236 - 239, XP031631884, ISBN: 978-1-4244-5814-1 [A] 1-13 * the whole document *
 [A]   OHYAMA H ET AL: "Radiation source dependence of device performance degradation for 4H-SiC MESFETs", SUPERLATTICES AND MICROSTRUCTURES, ACADEMIC PRESS, LONDON, GB, vol. 40, no. 4-6, 1 October 2006 (2006-10-01), pages 632 - 637, XP024904903, ISSN: 0749-6036, [retrieved on 20061001], DOI: 10.1016/J.SPMI.2006.09.009 [A] 1-13 * the whole document *

DOI:   http://dx.doi.org/10.1016/j.spmi.2006.09.009
 [A]   VITALY DANCHENKO ET AL: "Activation Energies of Thermal Annealing of Radiation-Induced Damage in N- and P-Channels of CMOS Integrated Circuits", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 27, no. 6, 1 January 1980 (1980-01-01), pages 1658 - 1664, XP055024634, ISSN: 0018-9499, DOI: 10.1109/TNS.1980.4331085 [A] 1-13 * the whole document *

DOI:   http://dx.doi.org/10.1109/TNS.1980.4331085
 [A]   VITALY DANCHENKO ET AL: "Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 28, no. 6, 1 January 1981 (1981-01-01), pages 4407 - 4412, XP055024636, ISSN: 0018-9499, DOI: 10.1109/TNS.1981.4335739 [A] 1-13 * Abschnitt "Isothermal Annealing" *

DOI:   http://dx.doi.org/10.1109/TNS.1981.4335739
Examination  XLAO-RUL TIAN ET AL: "Satellite remote-sensing technologies used in forest fire management", JOURNAL OF FORESTRY RESEARCH, vol. 16, 1 January 2005 (2005-01-01), pages 73 - 78, XP055259190 [A] 3
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