EP2639833 - Method of making a high-voltage field-effect transistor [Right-click to bookmark this link] | |||
Former [2013/38] | High-voltage field-effect transistor and method of making the same | ||
[2019/46] | Status | No opposition filed within time limit Status updated on 05.03.2021 Database last updated on 09.09.2024 | |
Former | The patent has been granted Status updated on 27.03.2020 | ||
Former | Grant of patent is intended Status updated on 17.11.2019 | ||
Former | Examination is in progress Status updated on 04.05.2018 | Most recent event Tooltip | 06.09.2024 | Lapse of the patent in a contracting state New state(s): MT | published on 09.10.2024 [2024/41] | Applicant(s) | For all designated states ams AG Schloss Premstätten Tobelbader Str. 30 8141 Premstätten / AT | [2020/16] |
Former [2013/38] | For all designated states austriamicrosystems AG Schloss Premstätten 8141 Unterpremstätten / AT | Inventor(s) | 01 /
Knaipp, Martin c/o ams AG Schloss Premstätten Tobelbader Str. 30 8141 Premstätten / AT | [2020/18] |
Former [2013/38] | 01 /
Knaipp, Martin Schwarzer Weg 49 8141 Unterpremstätten / AT | Representative(s) | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Schloßschmidstraße 5 80639 München / DE | [2020/18] |
Former [2013/38] | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Ridlerstrasse 55 80339 München / DE | Application number, filing date | 12159949.2 | 16.03.2012 | [2013/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2639833 | Date: | 18.09.2013 | Language: | EN | [2013/38] | Type: | B1 Patent specification | No.: | EP2639833 | Date: | 29.04.2020 | Language: | EN | [2020/18] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.09.2012 | Classification | IPC: | H01L29/78, H01L29/08, H01L29/06, H01L21/336 | [2013/38] | CPC: |
H01L29/66659 (EP,CN,US);
H01L21/26513 (US);
H01L21/266 (US);
H01L29/0634 (EP,CN,US);
H01L29/0649 (US);
H01L29/0653 (EP,CN,US);
H01L29/0865 (US);
H01L29/0882 (US);
H01L29/1095 (US);
H01L29/66681 (EP,CN,US);
H01L29/7816 (EP,CN,US);
H01L29/7823 (US);
H01L29/7835 (EP,CN,US)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2020/18] |
Former [2013/38] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Title | German: | Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors | [2019/46] | English: | Method of making a high-voltage field-effect transistor | [2019/46] | French: | Méthode de fabrication d'un transistor haute tension à effet de champ | [2019/46] |
Former [2013/38] | Hochspannungsfeldeffekttransistor und Verfahren zu dessen Herstellung | ||
Former [2013/38] | High-voltage field-effect transistor and method of making the same | ||
Former [2013/38] | Transistor haute tension à effet de champ et sa méthode de fabrication | Examination procedure | 13.01.2014 | Amendment by applicant (claims and/or description) | 13.01.2014 | Examination requested [2014/09] | 04.05.2018 | Despatch of a communication from the examining division (Time limit: M04) | 31.08.2018 | Reply to a communication from the examining division | 18.11.2019 | Communication of intention to grant the patent | 10.03.2020 | Fee for grant paid | 10.03.2020 | Fee for publishing/printing paid | 10.03.2020 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 04.05.2018 | Opposition(s) | 01.02.2021 | No opposition filed within time limit [2021/14] | Fees paid | Renewal fee | 26.03.2014 | Renewal fee patent year 03 | 24.03.2015 | Renewal fee patent year 04 | 22.03.2016 | Renewal fee patent year 05 | 21.03.2017 | Renewal fee patent year 06 | 21.03.2018 | Renewal fee patent year 07 | 20.03.2019 | Renewal fee patent year 08 | 24.03.2020 | Renewal fee patent year 09 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 16.03.2012 | AL | 29.04.2020 | AT | 29.04.2020 | CY | 29.04.2020 | CZ | 29.04.2020 | DK | 29.04.2020 | EE | 29.04.2020 | ES | 29.04.2020 | FI | 29.04.2020 | HR | 29.04.2020 | IT | 29.04.2020 | LT | 29.04.2020 | LV | 29.04.2020 | MC | 29.04.2020 | MK | 29.04.2020 | MT | 29.04.2020 | NL | 29.04.2020 | PL | 29.04.2020 | RO | 29.04.2020 | RS | 29.04.2020 | SE | 29.04.2020 | SI | 29.04.2020 | SK | 29.04.2020 | SM | 29.04.2020 | TR | 29.04.2020 | BG | 29.07.2020 | NO | 29.07.2020 | GR | 30.07.2020 | IS | 29.08.2020 | PT | 31.08.2020 | [2024/41] |
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Former [2020/46] | IS | 29.08.2020 | Documents cited: | Search | [A]DE4309764 (SIEMENS AG [DE]) [A] 2,7,9,11,12,15 * column 3, line 8 - line 40; figures 5-7 *; | [A]GB2380056 (FUJI ELECTRIC CO LTD [JP]) [A] 2,7,9,11,15 * page 15, line 18 - page 16, line 9; figures 11-13 * * page 14, line 27 - page 15, line 16 *; | [XI]US2003132450 (MINATO TADAHARU [JP], et al) [X] 1,8 * paragraph [0594] - paragraph [0600]; figures 146-147 * [I] 2-7,9-15; | [A] - HERINGA A ET AL, "Novel power transistor design for a process independent high voltage option in standard CMOS", PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS; 4-8 JUNE 2006; NAPLES, IT, IEEE OPERATIONS CENTER, PISCATAWAY, NJ, USA, (20060604), doi:10.1109/ISPSD.2006.1666137, ISBN 978-0-7803-9714-9, pages 1 - 4, XP010933525 [A] 3 * figures 3,4(b) * DOI: http://dx.doi.org/10.1109/ISPSD.2006.1666137 | by applicant | WO2009050669 | US2010213517 |