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EP2736171
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EP About this file: EP2736171
| EP2736171 - Cascoded semiconductor devices [Right-click to bookmark this link] | Status | The application has been refused Status updated on 02.05.2018 Database last updated on 28.03.2026 | |
| Former | Examination is in progress Status updated on 23.12.2016 | Most recent event Tooltip | 17.08.2018 | Refusal of application | published on 19.09.2018 [2018/38] | Applicant(s) | For all designated states Nexperia B.V. Jonkerbosplein 52 6534 AB Nijmegen / NL | [2017/18] |
| Former [2016/43] | For all designated states Nexperia B.V. High Tech Campus 60 5656 AG Eindhoven / NL | ||
| Former [2014/22] | For all designated states NXP B.V. High Tech Campus 60 5656 AG Eindhoven / NL | Inventor(s) | 01 /
Rose, Matthias NXP Semiconductors Intellectual Property and Licensing 60 High Street Redhill, Surrey RH1 1NY / GB | 02 /
Sonsky, Jan NXP Semiconductors Intellectual Property and Licensing 60 High Street Redhill, Surrey RH1 1NY / GB | 03 /
Rutter, Phil NXP Semiconductors Intellectual Property and Licensing 60 High Street Redhill, Surrey RH1 1NY / GB | [2014/22] | Representative(s) | Crawford, Andrew, et al Nexperia B.V. Legal & IP Jonkerbosplein 52 6534 AB Nijmegen / NL | [N/P] |
| Former [2014/22] | Crawford, Andrew NXP B.V. Intellectual Property & Licensing Red Central 60 High Street Redhill, Surrey RH1 1SH / GB | Application number, filing date | 12194083.7 | 23.11.2012 | [2014/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2736171 | Date: | 28.05.2014 | Language: | EN | [2014/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.04.2013 | Classification | IPC: | H03K17/567, H01L29/778, H03K17/687 | [2014/22] | CPC: |
H03K17/567 (EP,US);
H10D84/83 (US);
H03K17/6871 (EP,US);
H03K17/6874 (EP,US);
H03K17/74 (EP,US);
H10D84/221 (US);
H03K2017/6875 (EP,US)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/22] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Kaskodenhalbleiterbauelemente | [2014/22] | English: | Cascoded semiconductor devices | [2014/22] | French: | Dispositifs à semi-conducteurs cascadés | [2014/22] | Examination procedure | 05.06.2013 | Amendment by applicant (claims and/or description) | 31.10.2013 | Examination requested [2014/22] | 18.08.2016 | Despatch of a communication from the examining division (Time limit: M04) | 22.12.2016 | Reply to a communication from the examining division | 19.04.2018 | Cancellation of oral proceeding that was planned for 19.04.2018 | 19.04.2018 | Date of oral proceedings (cancelled) | 03.05.2018 | Despatch of communication that the application is refused, reason: substantive examination [2018/38] | 13.05.2018 | Application refused, date of legal effect [2018/38] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 18.08.2016 | Fees paid | Renewal fee | 01.12.2014 | Renewal fee patent year 03 | 02.12.2015 | Renewal fee patent year 04 | 30.11.2016 | Renewal fee patent year 05 | 10.11.2017 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 30.11.2015 | 04 M06 Fee paid on 11.12.2015 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XAI] DE19902520 (SIEMENS AG et al.) [X] 1,2,5,9 * column 1, line 1 - line 31; figures 1,6 * * column 3, line 54 - column 4, line 41 *[A] 3,4,7,8,10-13 [I] 6 | [XAI] WO0044088 (SIEMENS AG et al.) [X] 1,2,5,9 * page 1 - page 3; figure 1 *[A] 3,4,7,8,10-13 [I] 6 | [XYI] HAEHRE K ET AL: "Switching speed-control of an optimized capacitor-clamped normally-on Silicon Carbide JFET cascode", POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC), 2012 15TH INTERNATIONAL, IEEE, 4 September 2012 (2012-09-04), pages DS1a.11 - 1, XP032311806, ISBN: 978-1-4673-1970-6, DOI: 10.1109/EPEPEMC.2012.6397201 [X] 1-4,9 * the whole document * [Y] 7,10-13 [I] 5,6,8 DOI: http://dx.doi.org/10.1109/EPEPEMC.2012.6397201 | [Y] WATARU SAITO ET AL: "High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT", COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM, 2006. CSIC 2006. IEEE, IEEE, PISCATAWAY, NJ, USA, 1 November 2006 (2006-11-01), pages 253 - 256, XP031051691, ISBN: 978-1-4244-0126-0 [Y] 7,10 * abstract * | [Y] KELLEY R L ET AL: "Power factor correction using an enhancement-mode SiC JFET", POWER ELECTRONICS SPECIALISTS CONFERENCE, 2008. PESC 2008. IEEE, IEEE, PISCATAWAY, NJ, USA, 15 June 2008 (2008-06-15), pages 4766 - 4769, XP031300703, ISBN: 978-1-4244-1667-7 [Y] 11 * abstract * | [Y] MAZZOLA M S ET AL: "Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter", APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, 2009. APEC 2009. TWENTY-FOURTH ANNUAL IEEE, IEEE, PISCATAWAY, NJ, USA, 15 February 2009 (2009-02-15), pages 649 - 652, XP031442749, ISBN: 978-1-4244-2811-3 [Y] 12 * abstract * | [Y] KELLEY R L ET AL: "SiC JFET Gate Driver Design for Use in DC/DC Converters", APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, 2006. APEC '06. T WENTY-FIRST ANNUAL IEEE MARCH 19, 2006, PISCATAWAY, NJ, USA,IEEE, PISCATAWAY, NJ, USA, 19 March 2006 (2006-03-19), pages 179 - 182, XP010909942, ISBN: 978-0-7803-9547-3, DOI: 10.1109/APEC.2006.1620536 [Y] 13 * abstract * DOI: http://dx.doi.org/10.1109/APEC.2006.1620536 | Examination | EP1063757 |