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Extract from the Register of European Patents

EP About this file: EP2742594

EP2742594 - DRIVE CIRCUIT AND METHOD FOR A GATED SEMICONDUCTOR SWITCHING DEVICE [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  10.07.2020
Database last updated on 31.08.2024
FormerExamination is in progress
Status updated on  23.03.2018
Most recent event   Tooltip10.07.2020Refusal of applicationpublished on 12.08.2020  [2020/33]
Applicant(s)For all designated states
Teledyne UK Limited
106 Waterhouse Lane
Chelmsford Essex CM1 2QU / GB
[2020/15]
Former [2019/11]For all designated states
Teledyne e2v (UK) Limited
106 Waterhouse Lane
Chelmsford Essex CM1 2QU / GB
Former [2014/25]For all designated states
E2V Technologies (UK) Limited
106 Waterhouse Lane Chelmsford
Essex CM1 2QU / GB
Inventor(s)01 / RICHARDSON, Robert
42 King Edwards Road
South Woodham Ferrers
Chelmsford Essex CM3 5PQ / GB
 [2014/25]
Representative(s)HGF
HGF Limited
1 City Walk
Leeds LS11 9DX / GB
[N/P]
Former [2014/25]McCrann, Sarah Ann
HGF Limited
140 London Wall
London EC2Y 5DN / GB
Application number, filing date12751104.610.08.2012
WO2012GB51948
Priority number, dateGB2011001390812.08.2011         Original published format: GB 201113908
[2014/25]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2013024270
Date:21.02.2013
Language:EN
[2013/08]
Type: A1 Application with search report 
No.:EP2742594
Date:18.06.2014
Language:EN
The application published by WIPO in one of the EPO official languages on 21.02.2013 takes the place of the publication of the European patent application.
[2014/25]
Search report(s)International search report - published on:EP21.02.2013
ClassificationIPC:H03K17/0424, H03K17/16
[2014/25]
CPC:
H03K17/0424 (EP,GB,US); H03K3/012 (US); H03K17/04206 (GB);
H03K17/0822 (GB); H03K17/166 (EP,GB,US)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2014/25]
TitleGerman:ANTRIEBSSCHALTUNG UND VERFAHREN FÜR EINE TORGESTEUERTE HALBLEITERSCHALTERSCHALTVORRICHTUNG[2014/25]
English:DRIVE CIRCUIT AND METHOD FOR A GATED SEMICONDUCTOR SWITCHING DEVICE[2014/25]
French:CIRCUIT D'ATTAQUE ET PROCÉDÉ POUR UN DISPOSITIF DE COMMUTATION À SEMI-CONDUCTEUR À COMMANDE PAR GRILLE[2014/25]
Entry into regional phase12.03.2014National basic fee paid 
12.03.2014Designation fee(s) paid 
12.03.2014Examination fee paid 
Examination procedure12.03.2014Examination requested  [2014/25]
30.09.2014Amendment by applicant (claims and/or description)
27.03.2018Despatch of a communication from the examining division (Time limit: M06)
05.10.2018Reply to a communication from the examining division
20.03.2020Cancellation of oral proceeding that was planned for 26.03.2020
26.03.2020Despatch of communication that the application is refused, reason: substantive examination [2020/33]
26.03.2020Date of oral proceedings (cancelled)
05.04.2020Application refused, date of legal effect [2020/33]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  27.03.2018
Request for further processing for:18.11.2014Request for further processing filed
18.11.2014Full payment received (date of receipt of payment)
Request procedure closed
24.11.2014Decision despatched
Fees paidRenewal fee
11.07.2014Renewal fee patent year 03
13.07.2015Renewal fee patent year 04
22.07.2016Renewal fee patent year 05
14.07.2017Renewal fee patent year 06
23.07.2018Renewal fee patent year 07
22.07.2019Renewal fee patent year 08
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Cited inInternational search[I]US2774888  (TROUSDALE ROBERT B) [I] 1-18 * the whole document *;
 [I]US3983418  (WALLACE KENNETH A) [I] 1-18 * the whole document *;
 [XI]DE2824957  (KIENSCHERF ECKHARD DIPL ING) [X] 1,10 * page 9, line 4 - page 12, line 4; figure 1 * [I] 2-9,11-18;
 [I]GB2132436  (LANSING BAGNALL LTD) [I] 1-18 * page 3, line 14 - line 75; figure 2 *;
 [I]JPS6086912  (FUJITSU LTD) [I] 1-18 * abstract *;
 [I]US4914558  (FLICKINGER JON [US]) [I] 1-18 * column 6, line 60 - column 7, line 41; figure 1 ** column 5, line 23 - column 12, line 53 *;
 [I]EP0687056  (TOSHIBA KK [JP]) [I] 1-18 * the whole document *;
 [I]US2005194919  (XAVIER GOUMAIN [FR], et al) [I] 1-18 * the whole document *;
 [I]US2007268649  (WANG TOM [TW]) [I] 1-18 * paragraph [0031]; figure 2 *
ExaminationJPS6086912
 JP2008235997
by applicantUS5332938
 WO2005025065
 WO2007137268
    - PROC. IEEE INTERNATIONAL POWER MODULATORS AND HIGH VOLTAGE CONFERENCE, (20080527), pages 128 - 130
    - IEEE TRANS. ON DIELECTRICS AND ELECTRICAL INSULATION, (200908), vol. 16, no. 4, pages 967 - 970
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.