EP2779333 - NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 13.03.2015 Database last updated on 09.09.2024 | Most recent event Tooltip | 13.03.2015 | Withdrawal of application | published on 15.04.2015 [2015/16] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33 Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 / JP | For all designated states Sony Corporation 1-7-1 Konan Minato-ku Tokyo 108-0075 / JP | [2014/38] | Inventor(s) | 01 /
KYONO Takashi c/o Osaka Works of Sumitomo Electric Industries Ltd. 1-3 Shimaya 1-chome Konohana-ku Osaka-shi Osaka 554-0024 / JP | 02 /
ENYA Yohei c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | 03 /
UENO Masaki c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | 04 /
YANASHIMA Katsunori c/o Sony Corporation 1-7-1 Konan Minto-ku Tokyo 108-0075 / JP | 05 /
TASAI Kunihiko c/o Sony Corporation 1-7-1 Konan Minto-ku Tokyo 108-0075 / JP | 06 /
NAKAJIMA Hiroshi c/o Sony Corporation 1-7-1 Konan Minto-ku Tokyo 108-0075 / JP | 07 /
FUTAGAWA Noriyuki c/o Sony Corporation 1-7-1 Konan Minto-ku Tokyo 108-0075 / JP | [2014/38] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstrasse 4 80802 München / DE | [N/P] |
Former [2014/38] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Leopoldstrasse 4 80802 München / DE | Application number, filing date | 12843889.2 | 22.06.2012 | WO2012JP66055 | Priority number, date | JP20110233165 | 24.10.2011 Original published format: JP 2011233165 | [2014/38] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2013061651 | Date: | 02.05.2013 | Language: | JA | [2013/18] | Type: | A1 Application with search report | No.: | EP2779333 | Date: | 17.09.2014 | Language: | EN | [2014/38] | Search report(s) | International search report - published on: | JP | 02.05.2013 | Classification | IPC: | H01S5/343, H01S5/22 | [2014/38] | CPC: |
H01S5/2009 (EP,US);
H01S5/3013 (US);
B82Y20/00 (EP,US);
H01S5/320275 (EP,US);
H01S5/3215 (EP,US);
H01S5/34333 (EP,US);
H01S5/2031 (EP,US);
H01S5/22 (EP,US);
H01S5/3063 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/38] | Title | German: | LICHTEMITTIERENDES NITRIDHALBLEITERELEMENT | [2014/38] | English: | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT | [2014/38] | French: | ELÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR NITRURE | [2014/38] | Entry into regional phase | 22.05.2014 | Translation filed | 22.05.2014 | National basic fee paid | 22.05.2014 | Search fee paid | 22.05.2014 | Designation fee(s) paid | 22.05.2014 | Examination fee paid | Examination procedure | 22.05.2014 | Amendment by applicant (claims and/or description) | 22.05.2014 | Examination requested [2014/38] | 09.03.2015 | Application withdrawn by applicant [2015/16] | Fees paid | Renewal fee | 22.05.2014 | Renewal fee patent year 03 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]WO2010147181 (SUMITOMO ELECTRIC INDUSTRIES [JP], et al); | [A]WO2011007777 (SUMITOMO ELECTRIC INDUSTRIES [JP], et al); | [A]WO2011040486 (SUMITOMO ELECTRIC INDUSTRIES [JP], et al); | [XE]JP2012124273 (ROHM CO LTD); | [X] - ASAMIZU HIROKUNI ET AL., "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides", APPLIED PHYSICS EXPRESS, (20090213), vol. 2, pages 021002-1 - 021002-3, XP008155430 | by applicant | JP2008177624 |