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Extract from the Register of European Patents

EP About this file: EP2779333

EP2779333 - NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  13.03.2015
Database last updated on 09.09.2024
Most recent event   Tooltip13.03.2015Withdrawal of applicationpublished on 15.04.2015  [2015/16]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku
Osaka-shi, Osaka 541-0041 / JP
For all designated states
Sony Corporation
1-7-1 Konan
Minato-ku
Tokyo 108-0075 / JP
[2014/38]
Inventor(s)01 / KYONO Takashi
c/o Osaka Works of Sumitomo
Electric Industries Ltd.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi Osaka 554-0024 / JP
02 / ENYA Yohei
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
03 / UENO Masaki
c/o Itami Works of Sumitomo
Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
04 / YANASHIMA Katsunori
c/o Sony Corporation
1-7-1 Konan
Minto-ku
Tokyo 108-0075 / JP
05 / TASAI Kunihiko
c/o Sony Corporation
1-7-1 Konan
Minto-ku
Tokyo 108-0075 / JP
06 / NAKAJIMA Hiroshi
c/o Sony Corporation
1-7-1 Konan
Minto-ku
Tokyo 108-0075 / JP
07 / FUTAGAWA Noriyuki
c/o Sony Corporation
1-7-1 Konan
Minto-ku
Tokyo 108-0075 / JP
 [2014/38]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2014/38]Grünecker, Kinkeldey, Stockmair & Schwanhäusser
Leopoldstrasse 4
80802 München / DE
Application number, filing date12843889.222.06.2012
WO2012JP66055
Priority number, dateJP2011023316524.10.2011         Original published format: JP 2011233165
[2014/38]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2013061651
Date:02.05.2013
Language:JA
[2013/18]
Type: A1 Application with search report 
No.:EP2779333
Date:17.09.2014
Language:EN
[2014/38]
Search report(s)International search report - published on:JP02.05.2013
ClassificationIPC:H01S5/343, H01S5/22
[2014/38]
CPC:
H01S5/2009 (EP,US); H01S5/3013 (US); B82Y20/00 (EP,US);
H01S5/320275 (EP,US); H01S5/3215 (EP,US); H01S5/34333 (EP,US);
H01S5/2031 (EP,US); H01S5/22 (EP,US); H01S5/3063 (EP,US);
H01S5/3213 (EP,US); H01S5/3403 (EP,US); H01S5/3407 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2014/38]
TitleGerman:LICHTEMITTIERENDES NITRIDHALBLEITERELEMENT[2014/38]
English:NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT[2014/38]
French:ELÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR NITRURE[2014/38]
Entry into regional phase22.05.2014Translation filed 
22.05.2014National basic fee paid 
22.05.2014Search fee paid 
22.05.2014Designation fee(s) paid 
22.05.2014Examination fee paid 
Examination procedure22.05.2014Amendment by applicant (claims and/or description)
22.05.2014Examination requested  [2014/38]
09.03.2015Application withdrawn by applicant  [2015/16]
Fees paidRenewal fee
22.05.2014Renewal fee patent year 03
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Cited inInternational search[X]WO2010147181  (SUMITOMO ELECTRIC INDUSTRIES [JP], et al);
 [A]WO2011007777  (SUMITOMO ELECTRIC INDUSTRIES [JP], et al);
 [A]WO2011040486  (SUMITOMO ELECTRIC INDUSTRIES [JP], et al);
 [XE]JP2012124273  (ROHM CO LTD);
 [X]  - ASAMIZU HIROKUNI ET AL., "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides", APPLIED PHYSICS EXPRESS, (20090213), vol. 2, pages 021002-1 - 021002-3, XP008155430
by applicantJP2008177624
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.