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EP2833409
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EP About this file: EP2833409
| EP2833409 - FIELD EFFECT SILICON CARBIDE TRANSISTOR [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 20.12.2019 Database last updated on 18.11.2024 | |
| Former | Examination is in progress Status updated on 06.04.2019 | Most recent event Tooltip | 20.12.2019 | Application deemed to be withdrawn | published on 22.01.2020 [2020/04] | Applicant(s) | For all designated states Hitachi, Ltd. 6-6 Marunouchi 1-chome Chiyoda-ku Tokyo 100-8280 / JP | [N/P] |
| Former [2015/06] | For all designated states Hitachi, Ltd. 6-6 Marunouchi 1-chome Chiyoda-ku Tokyo 100-8280 / JP | Inventor(s) | 01 /
MINE, Toshiyuki c/o Hitachi, Ltd., 6-6, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-8280 / JP | 02 /
SHIMAMOTO, Yasuhiro c/o Hitachi, Ltd., 6-6, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-8280 / JP | 03 /
HAMAMURA, Hirotaka c/o Hitachi, Ltd., 6-6, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-8280 / JP | [2015/06] | Representative(s) | MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB Paul-Heyse-Straße 29 80336 München / DE | [N/P] |
| Former [2015/06] | MERH-IP Matias Erny Reichl Hoffmann Paul-Heyse-Strasse 29 80336 München / DE | Application number, filing date | 12873344.1 | 30.03.2012 | WO2012JP02224 | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2013145023 | Date: | 03.10.2013 | Language: | JA | [2013/40] | Type: | A1 Application with search report | No.: | EP2833409 | Date: | 04.02.2015 | Language: | EN | [2015/06] | Search report(s) | International search report - published on: | JP | 03.10.2013 | (Supplementary) European search report - dispatched on: | EP | 08.10.2015 | Classification | IPC: | H01L29/78, H01L29/792, H01L29/16, H01L29/51 | [2015/46] | CPC: |
H01L21/049 (EP,US);
H01L29/7802 (US);
H01L21/046 (EP,US);
H01L29/1608 (EP,US);
H01L29/513 (EP,US);
H01L29/66068 (EP,US);
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| Former IPC [2015/06] | H01L29/78 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/06] | Title | German: | SILICIUMCARBID-FELDEFFEKTTRANSISTOR | [2015/06] | English: | FIELD EFFECT SILICON CARBIDE TRANSISTOR | [2015/06] | French: | TRANSISTOR À EFFET DE CHAMP EN CARBURE DE SILICIUM | [2015/06] | Entry into regional phase | 26.02.2014 | Translation filed | 14.03.2014 | National basic fee paid | 14.03.2014 | Search fee paid | 14.03.2014 | Designation fee(s) paid | 14.03.2014 | Examination fee paid | Examination procedure | 14.03.2014 | Examination requested [2015/06] | 04.05.2016 | Amendment by applicant (claims and/or description) | 10.04.2019 | Despatch of a communication from the examining division (Time limit: M04) | 21.08.2019 | Application deemed to be withdrawn, date of legal effect [2020/04] | 17.09.2019 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2020/04] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 10.04.2019 | Fees paid | Renewal fee | 14.03.2014 | Renewal fee patent year 03 | 31.03.2015 | Renewal fee patent year 04 | 31.03.2016 | Renewal fee patent year 05 | 31.03.2017 | Renewal fee patent year 06 | 03.04.2018 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 31.03.2019 | 08 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP1689000 (MATSUSHITA ELECTRIC IND CO LTD [JP]) [Y] 7 * paragraphs [0013] - [0026]; figure 1B * * paragraph [0066] - paragraph [0074]; figure 3 *; | [A]EP1965430 (DENSO CORP [JP]) [A] 1-12 * paragraph [0180] - paragraph [0187]; figures 20-22B *; | [A]US2008315292 (JI HUA [CN], et al) [A] 1-12 * paragraph [0121] - paragraph [0129]; figure 20 *; | [Y]US2010295060 (KUDOU CHIAKI [JP], et al) [Y] 12 * paragraph [0068] - paragraph [0074]; figure 1 * * paragraph [0087] * * paragraph [0091]; figure 2 *; | [Y]WO2011158528 (SUMITOMO ELECTRIC INDUSTRIES [JP], et al) [Y] 6 * paragraph [0072] - paragraph [0077]; figures 2-7 *; | [XYI]US2012019284 (MAUDER ANTON [DE], et al) [X] 1,2 * paragraph [0035] - paragraph [0038]; figure 2 * * paragraph [0054] - paragraph [0062]; figures 12-16 * * paragraph [0066] * [Y] 6,7,12 [I] 3-5,8-11; | [A]US2012057386 (ADACHI KAZUHIRO [JP], et al) [A] 1,2,12 * paragraph [0293] - paragraph [0294]; figure 35 *; | US2012214309 [ ] (ITOH SATOMI [JP], et al) [ ] * paragraph [0071] - paragraph [0079]; figures 2-7 *; | [A] - MRINAL K. DAS ET AL, "Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal", MATERIALS SCIENCE FORUM, (20061015), vol. 527-529, doi:10.4028/www.scientific.net/MSF.527-529.967, pages 967 - 970, XP055216201 [A] 7 * the whole document * DOI: http://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.967 | International search | [Y]JP2002222950 (DENSO CORP); | [A]WO03047000 (MATSUSHITA ELECTRIC IND CO LTD [JP], et al); | [A]JP2007066944 (NISSAN MOTOR, et al); | [Y]JP2008270258 (DENSO CORP); | [Y]JP2009141144 (SHARP KK); | [Y]WO2012036165 (ROHM CO LTD [JP], et al) | by applicant | JP2008270258 | JP2011091186 | JP2011254119 |