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EP2620946
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EP About this file: EP2620946
| EP2620946 - Adaptive programming and erasure methods for analog memory cells [Right-click to bookmark this link] | Status | The application has been refused Status updated on 28.09.2018 Database last updated on 24.08.2024 | Most recent event Tooltip | 28.09.2018 | Refusal of application | published on 31.10.2018 [2018/44] | Applicant(s) | For all designated states Apple Inc. One Apple Park Way Cupertino CA 95014 / US | [2018/31] |
| Former [2013/31] | For all designated states APPLE INC. 1 Infinite Loop Cupertino, CA 95014 / US | Inventor(s) | 01 /
Gurgi, Eyal c/o Apple Inc. 1 Infinite Loop Cupertino, CA, 95014 / US | 02 /
Kasorla, Yoav c/o Apple Inc. 1 Infinite Loop Cupertino, CA, 95014 / US | 03 /
Shalvi, Ofir c/o Apple Inc. 1 Infinite Loop Cupertino, CA, 95014 / US | [2013/31] | Representative(s) | Lang, Johannes Bardehle Pagenberg Partnerschaft mbB Patentanwälte, Rechtsanwälte Prinzregentenplatz 7 81675 München / DE | [N/P] |
| Former [2013/31] | Lang, Johannes Bardehle Pagenberg Partnerschaft Patentanwälte, Rechtsanwälte Prinzregentenplatz 7 81675 München / DE | Application number, filing date | 13152130.4 | 22.01.2013 | [2013/31] | Priority number, date | US201213356694 | 24.01.2012 Original published format: US201213356694 | US201213471483 | 15.05.2012 Original published format: US201213471483 | [2013/31] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2620946 | Date: | 31.07.2013 | Language: | EN | [2013/31] | Type: | A3 Search report | No.: | EP2620946 | Date: | 23.10.2013 | Language: | EN | [2013/43] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.09.2013 | Classification | IPC: | G11C29/02, G11C11/56, G11C16/34 | [2013/31] | CPC: |
G11C11/5628 (EP);
G11C11/5635 (EP);
G11C16/10 (KR);
G11C16/14 (EP);
G11C16/34 (KR);
G11C16/3445 (EP);
G11C16/3459 (EP);
G11C29/021 (EP);
G11C29/028 (EP);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2013/31] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Adaptive Programmier- und Löschverfahren für analoge Speicherzellen | [2013/31] | English: | Adaptive programming and erasure methods for analog memory cells | [2013/31] | French: | Procédés de programmation et d'effacement adaptivs pour cellules de mémoire analogiques | [2013/31] | Examination procedure | 22.01.2013 | Examination requested [2013/31] | 23.04.2014 | Amendment by applicant (claims and/or description) | 10.02.2016 | Despatch of a communication from the examining division (Time limit: M04) | 14.06.2016 | Reply to a communication from the examining division | 30.05.2018 | Application refused, date of legal effect [2018/44] | 30.05.2018 | Cancellation of oral proceeding that was planned for 31.05.2018 | 31.05.2018 | Date of oral proceedings | 31.05.2018 | Date of oral proceedings (cancelled) | 12.06.2018 | Despatch of communication that the application is refused, reason: substantive examination [2018/44] | 12.06.2018 | Minutes of oral proceedings despatched | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 10.02.2016 | Fees paid | Renewal fee | 13.01.2015 | Renewal fee patent year 03 | 11.01.2016 | Renewal fee patent year 04 | 11.01.2017 | Renewal fee patent year 05 | 15.01.2018 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]US7656710 (WONG SAU CHING [US]) [X] 1,2,9,10 * column 6, line 59 - column 16, line 6; figures 2-4E * [A] 3,11; | [XA]US2006158940 (SHAPPIR ASSAF [IL], et al) [X] 1,3,9,11 * paragraph [0010] * [A] 2,10 | by applicant | - BEZ ET AL., "Introduction to Flash Memory", PROCEEDINGS OF THE IEEE, (200304), vol. 91, no. 4, doi:doi:10.1109/JPROC.2003.811702, pages 489 - 502, XP011065131 DOI: http://dx.doi.org/10.1109/JPROC.2003.811702 | - EITAN ET AL., "Multilevel Flash Cells and their Trade-Offs", PROCEEDINGS OF THE 1996 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM, pages 169 - 172 | - EITAN ET AL., "Can NROM, a 2-bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?", PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS (SSDM, (19990921), pages 522 - 524, XP000935199 | - MAAYAN ET AL., "A 512 Mb NROM Flash Data Storage Memory with 8 MB/s Data Rate", PROCEEDINGS OF THE 2002 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC 2002, (20020203), pages 100 - 101 | - KIM; KOH; NIS, SERBIA; MONTENEGRO, "Future Memory Technology including Emerging New Memories", PROCEEDINGS OF THE 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL, (20040516), vol. 1, doi:doi:10.1109/ICMEL.2004.1314646, pages 377 - 384, XP010709368 DOI: http://dx.doi.org/10.1109/ICMEL.2004.1314646 |