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EP2731143
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EP About this file: EP2731143
| EP2731143 - Power semiconductor device [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 06.03.2020 Database last updated on 31.08.2024 | |
| Former | Examination is in progress Status updated on 18.06.2019 | Most recent event Tooltip | 06.03.2020 | Application deemed to be withdrawn | published on 08.04.2020 [2020/15] | Applicant(s) | For all designated states LG Innotek Co., Ltd. 98, Huam-ro, Jung-gu Seoul, 04637 / KR | [2017/20] |
| Former [2014/20] | For all designated states LG Innotek Co., Ltd. Seoul Square 20F Namdaemunno 5-ga Jung-gu Seoul 100-714 / KR | Inventor(s) | 01 /
Oh, Jung Hun Seoul Square 20F Namdaemunno 5-ga Jung-gu 100-714 Seoul / KR | [2014/20] | Representative(s) | Zardi, Marco M. Zardi & Co. SA Via Pioda 6 6900 Lugano / CH | [2014/20] | Application number, filing date | 13179593.2 | 07.08.2013 | [2014/20] | Priority number, date | KR20120125842 | 08.11.2012 Original published format: KR 20120125842 | [2014/20] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2731143 | Date: | 14.05.2014 | Language: | EN | [2014/20] | Type: | A3 Search report | No.: | EP2731143 | Date: | 23.08.2017 | Language: | EN | [2017/34] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.07.2017 | Classification | IPC: | H01L29/778, H01L21/338, H01L29/06, H01L29/34, // H01L29/423, H01L29/20 | [2014/20] | CPC: |
H01L29/0646 (EP,US);
H01L21/18 (KR);
H01L29/34 (EP,CN,US);
H01L29/0619 (EP,CN,US);
H01L29/66462 (EP,CN,US);
H01L29/778 (KR);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/20] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Leistungshalbleiterbauelement | [2014/20] | English: | Power semiconductor device | [2014/20] | French: | Dispositif semi-conducteur de puissance | [2014/20] | Examination procedure | 31.03.2014 | Examination requested [2014/20] | 14.02.2018 | Amendment by applicant (claims and/or description) | 24.06.2019 | Despatch of a communication from the examining division (Time limit: M04) | 05.11.2019 | Application deemed to be withdrawn, date of legal effect [2020/15] | 03.12.2019 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2020/15] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 24.06.2019 | Fees paid | Renewal fee | 17.07.2015 | Renewal fee patent year 03 | 26.08.2016 | Renewal fee patent year 04 | 24.08.2017 | Renewal fee patent year 05 | 22.08.2018 | Renewal fee patent year 06 | 22.08.2019 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US6294801 (INOKUCHI KAZUYUKI [JP], et al) [X] 1,4,8,11,12 * figures 1, 6 and associated text * [I] 2,3,5-7,9,10,13-15; | [I]DE102010016993 (UNITED MONOLITHIC SEMICONDUCT [DE]) [I] 1-15 * figures 3, 4 and associated text *; | [A] - ARULKUMARAN S ET AL, "ON THE EFFECTS OF GATE-RECESS ETCHING IN CURRENT-COLLAPSE OF DIFFERENT CAP LAYERS GROWN ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, (200603), vol. 45, no. 8, doi:10.1143/JJAP.45.L220, ISSN 0021-4922, pages L220 - L223, XP001245503 [A] 1-15 * abstract * * figure 1 * DOI: http://dx.doi.org/10.1143/JJAP.45.L220 |