blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP2709159

EP2709159 - Fabricating method of thin film transistor, fabricating method of array substrate and display device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.09.2020
Database last updated on 01.10.2024
FormerThe patent has been granted
Status updated on  04.10.2019
FormerGrant of patent is intended
Status updated on  03.04.2019
FormerRequest for examination was made
Status updated on  15.02.2019
FormerGrant of patent is intended
Status updated on  08.01.2019
FormerRequest for examination was made
Status updated on  27.10.2018
FormerGrant of patent is intended
Status updated on  27.06.2018
Most recent event   Tooltip08.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 10.08.2022  [2022/32]
Applicant(s)For all designated states
BOE Technology Group Co., Ltd.
No. 10 Jiuxianqiao Rd.
Chaoyang District
Beijing 100015 / CN
[2019/45]
Former [2014/12]For all designated states
Boe Technology Group Co. Ltd.
No. 10 Jiuxianqiao Rd.
Chaoyang District
Beijing 100015 / CN
Inventor(s)01 / Yoo, Seongyeol
No. 9 Dize Rd., BDA
Beijing, Beijing 100176 / CN
02 / Um, Yoonsung
No. 9 Dize Rd., BDA
Beijing, Beijing 100176 / CN
 [2018/30]
Former [2014/12]01 / Yoo, Seongyeol
No. 9 Dize Rd., BDA
Beijing Beijing 100176 / CN
02 / Um, Yoonsung
No. 9 Dize Rd., BDA
Beijing Beijing 100176 / CN
Representative(s)Brötz, Helmut, et al
Rieder & Partner mbB
Patentanwälte - Rechtsanwalt
Yale-Allee 26
42329 Wuppertal / DE
[N/P]
Former [2019/45]Brötz, Helmut, et al
Rieder & Partner mbB
Patentanwälte - Rechtsanwalt
Corneliusstrasse 45
42329 Wuppertal / DE
Former [2014/12]Brötz, Helmut, et al
Rieder & Partner
Patentanwälte - Rechtsanwalt
Corneliusstrasse 45
42329 Wuppertal / DE
Application number, filing date13184677.617.09.2013
[2014/12]
Priority number, dateCN20121034526217.09.2012         Original published format: CN201210345262
[2014/12]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2709159
Date:19.03.2014
Language:EN
[2014/12]
Type: B1 Patent specification 
No.:EP2709159
Date:06.11.2019
Language:EN
[2019/45]
Search report(s)(Supplementary) European search report - dispatched on:EP17.12.2013
ClassificationIPC:H01L29/66, H01L29/786, H01L27/12
[2018/25]
CPC:
H01L29/7869 (EP,US); H01L29/66969 (US); H01L27/1225 (EP,US)
Former IPC [2014/12]H01L29/786, H01L27/12
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/45]
Former [2014/12]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:Herstellungsverfahren für Dünnschichttransistor, Herstellungsverfahren für Arraysubstrat und Anzeigevorrichtung[2014/12]
English:Fabricating method of thin film transistor, fabricating method of array substrate and display device[2014/12]
French:Procédé de fabrication de transistor à couche mince, procédé de fabrication de substrat de réseau et dispositif d'affichage[2014/12]
Examination procedure02.09.2014Examination requested  [2014/41]
09.09.2014Amendment by applicant (claims and/or description)
28.06.2018Communication of intention to grant the patent
22.10.2018Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
09.01.2019Communication of intention to grant the patent
12.02.2019Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
09.05.2019Communication of intention to grant the patent
06.08.2019Fee for grant paid
06.08.2019Fee for publishing/printing paid
06.08.2019Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  28.06.2018
Opposition(s)07.08.2020No opposition filed within time limit [2020/42]
Fees paidRenewal fee
15.09.2015Renewal fee patent year 03
12.09.2016Renewal fee patent year 04
15.09.2017Renewal fee patent year 05
25.09.2018Renewal fee patent year 06
24.09.2019Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU17.09.2013
AL06.11.2019
AT06.11.2019
CY06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
IT06.11.2019
LT06.11.2019
LV06.11.2019
MC06.11.2019
MK06.11.2019
MT06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
TR06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
[2022/32]
Former [2022/27]HU17.09.2013
AL06.11.2019
AT06.11.2019
CY06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
IT06.11.2019
LT06.11.2019
LV06.11.2019
MC06.11.2019
MT06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
TR06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2022/26]AL06.11.2019
AT06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
IT06.11.2019
LT06.11.2019
LV06.11.2019
MC06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
TR06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2021/23]AL06.11.2019
AT06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
IT06.11.2019
LT06.11.2019
LV06.11.2019
MC06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2021/10]AL06.11.2019
AT06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
IT06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/51]AL06.11.2019
AT06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SI06.11.2019
SK06.11.2019
SM06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/37]AL06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
SK06.11.2019
SM06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/36]AL06.11.2019
CZ06.11.2019
DK06.11.2019
EE06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/35]AL06.11.2019
CZ06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RO06.11.2019
RS06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/32]AL06.11.2019
ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RS06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/25]ES06.11.2019
FI06.11.2019
HR06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
RS06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/24]ES06.11.2019
FI06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
IS06.03.2020
PT06.03.2020
Former [2020/23]ES06.11.2019
FI06.11.2019
LT06.11.2019
LV06.11.2019
NL06.11.2019
PL06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
GR07.02.2020
PT06.03.2020
Former [2020/22]FI06.11.2019
LT06.11.2019
SE06.11.2019
BG06.02.2020
NO06.02.2020
PT06.03.2020
Former [2020/21]NO06.02.2020
Documents cited:Search[A]US2004056251  (KIM DONG-GYU [KR], et al) [A] 1-12* paragraph [0109] *;
 [Y]US2005124088  (CHEN HUNG-DE [TW]) [Y] 2,6 * paragraph [0008] - paragraph [0010] *;
 [IY]US2008318368  (RYU MYUNG-KWAN [KR], et al) [I] 13,14 * paragraph [0012] * * paragraph [0015] - paragraph [0017] * * paragraph [0032] * * paragraph [0040] * * paragraph [0045] - paragraph [0052]; figures 3C-E * [Y] 1-12;
 [A]US2011049508  (KAWAMURA TETSUFUMI [JP], et al) [A] 1-12 * the whole document *;
 [A]US7981708  (LEE LIU-CHUNG [TW], et al) [A] 1-12 * the whole document *;
 [X]WO2011086905  (SHARP KK [JP], et al) [X] 13,14 * figures 4, 7e *;
 [A]WO2011111781  (SHARP KK [JP], et al) [A] 1-12 * figures 5(a)-(d) *;
 [A]US2011263079  (WANG SHI-QING [US]) [A] 1-12 * the whole document *;
 [IY]US2012012836  (SASAGAWA SHINYA [JP], et al) [I] 13,14 * the whole document * [Y] 1-12;
 [AP]EP2546884  (SHARP KK [JP]) [AP] 1-12 * the whole document *;
 [A]  - CHANG-JUNG KIM ET AL, "Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor", ELECTROCHEMICAL AND SOLID-STATE LETTERS, (20090101), vol. 12, no. 4, doi:10.1149/1.3067838, ISSN 1099-0062, page H95, XP055006581 [A] 1-12 * the whole document *

DOI:   http://dx.doi.org/10.1149/1.3067838
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.