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Extract from the Register of European Patents

EP About this file: EP2828859

EP2828859 - MULTI-FUNCTION RESISTANCE CHANGE MEMORY CELLS AND APPARATUSES INCLUDING THE SAME [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  11.10.2019
Database last updated on 14.09.2024
FormerExamination is in progress
Status updated on  13.04.2018
Most recent event   Tooltip11.10.2019Refusal of applicationpublished on 13.11.2019  [2019/46]
Applicant(s)For all designated states
Micron Technology, Inc.
8000 South Federal Way
Boise, ID 83716-9632 / US
[2015/05]
Inventor(s)01 / SILLS, Scott, E.
1316 S. Gourley St.
Boise, ID 83705 / US
 [2015/05]
Representative(s)Granleese, Rhian Jane, et al
Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
[N/P]
Former [2015/05]Maury, Richard Philip, et al
Marks & Clerk LLP
90 Long Acre
London WC2E 9RA / GB
Application number, filing date13765158.413.03.2013
WO2013US30998
Priority number, dateUS20121342894423.03.2012         Original published format: US201213428944
[2015/05]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2013142208
Date:26.09.2013
Language:EN
[2013/39]
Type: A1 Application with search report 
No.:EP2828859
Date:28.01.2015
Language:EN
The application published by WIPO in one of the EPO official languages on 26.09.2013 takes the place of the publication of the European patent application.
[2015/05]
Search report(s)International search report - published on:KR26.09.2013
(Supplementary) European search report - dispatched on:EP04.11.2015
ClassificationIPC:G11C13/00, G11C7/10, G11C7/22, G11C11/00, G11C14/00
[2015/49]
CPC:
G11C13/0069 (EP,KR,US); G11C13/0023 (EP,KR,US); G11C11/005 (EP,US);
G11C11/5685 (US); G11C13/0002 (EP,US); G11C13/0011 (EP,KR,US);
G11C13/003 (KR,US); G11C13/0033 (EP,KR,US); G11C13/0038 (KR,US);
G11C13/004 (KR,US); G11C14/00 (EP,KR,US); G11C2013/0078 (EP,KR,US);
G11C2013/0083 (EP,KR,US); G11C2013/0092 (EP,KR,US) (-)
Former IPC [2015/05]G11C13/00, G11C7/10, G11C7/22
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2015/05]
TitleGerman:MULTIFUNKTIONELLE WIDERSTANDSWECHSELSPEICHERZELLEN UND VORRICHTUNGEN DAMIT[2015/05]
English:MULTI-FUNCTION RESISTANCE CHANGE MEMORY CELLS AND APPARATUSES INCLUDING THE SAME[2015/05]
French:CELLULES DE MÉMOIRE MULTIFONCTIONS À CHANGEMENT DE RÉSISTANCE ET APPAREIL LES COMPRENANT[2015/05]
Entry into regional phase07.10.2014National basic fee paid 
07.10.2014Search fee paid 
07.10.2014Designation fee(s) paid 
07.10.2014Examination fee paid 
Examination procedure22.01.2014Request for preliminary examination filed
International Preliminary Examining Authority: KR
07.10.2014Examination requested  [2015/05]
26.05.2016Amendment by applicant (claims and/or description)
11.04.2018Despatch of a communication from the examining division (Time limit: M06)
22.10.2018Reply to a communication from the examining division
04.06.2019Cancellation of oral proceeding that was planned for 04.06.2019
04.06.2019Date of oral proceedings (cancelled)
27.06.2019Despatch of communication that the application is refused, reason: substantive examination [2019/46]
07.07.2019Application refused, date of legal effect [2019/46]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  11.04.2018
Fees paidRenewal fee
10.03.2015Renewal fee patent year 03
10.03.2016Renewal fee patent year 04
10.03.2017Renewal fee patent year 05
13.03.2018Renewal fee patent year 06
13.03.2019Renewal fee patent year 07
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Documents cited:Search[Y]US2011315947  (KOZICKI MICHAEL N [US]) [Y] 1-18 * paragraphs [0020] , [0044] , [0093] * * paragraph [0143] - paragraph [0147]; figure 32 *;
 [Y]EP2045814  (ST MICROELECTRONICS SRL [IT]) [Y] 1-18 * paragraph [0009] - paragraph [0019]; figure 1 *;
 [A]WO02082452  (AXON TECHNOLOGIES CORP [US], et al) [A] 3 * page 28, line 6 - page 29, line 17; figure 31 *;
 [A]US2012033512  (TAKASE SATORU [JP]) [A] 14-16 * abstract *;
 [A]US2009003034  (HAPP THOMAS [US], et al) [A] 1-18 * paragraph [0019] - paragraph [0042]; figures 7-9 *
 [A]  - SHIMENG YU ET AL, "Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (20110422), vol. 58, no. 5, doi:10.1109/TED.2011.2116120, ISSN 0018-9383, pages 1352 - 1360, XP011476940 [A] 1-18 * page 1352, column r, paragraph l - page 1353, column l, paragraph f; figure 1 *

DOI:   http://dx.doi.org/10.1109/TED.2011.2116120
International search[X]US2012033512  (TAKASE SATORU [JP]);
 [Y]US2010128508  (MAEJIMA HIROSHI [JP]);
 [A]US2010188885  (TODA HARUKI [JP], et al);
 [A]US2012014164  (KAMOSHIDA MASAHIRO [JP], et al);
 [A]US2006002174  (HOSOI YASUNARI [JP], et al);
 [A]JP2012038393  (SPANSION JAPAN LTD)
by applicantUS2011315947
 EP2045814
 WO02082452
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.