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Extract from the Register of European Patents

EP About this file: EP2901475

EP2901475 - METHOD FOR FORMING A THROUGH-SILICON VIA BY ELECTROLESS METAL DEPOSITION, AND CORRESPONDING SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
Former [2015/32]ELECTROLESS METAL THROUGH SILICON VIA
[2019/34]
StatusNo opposition filed within time limit
Status updated on  01.01.2021
Database last updated on 14.09.2024
FormerThe patent has been granted
Status updated on  24.01.2020
FormerGrant of patent is intended
Status updated on  18.09.2019
FormerExamination is in progress
Status updated on  18.02.2019
Most recent event   Tooltip08.07.2022Lapse of the patent in a contracting state
New state(s): MK
published on 10.08.2022  [2022/32]
Applicant(s)For all designated states
Silex Microsystems AB
P O Box 595
175 26 Järfälla / SE
[2015/32]
Inventor(s)01 / EBEFORS, Thorbjörn
Kallkärrsvägen 28
S-141 41 Huddinge / SE
02 / KNUTSSON, Henrik
Pipers Backe 12
S-593 38 Västervik / SE
 [2015/35]
Former [2015/32]01 / EBEFORS, Thorbjörn
Kallkärrsvägen 28
S-141 41 Huddinge / SE
02 / KNUTSSON, Henrik
Hamngatan 39A
S-593 33 Västervik / SE
Representative(s)Brann AB
P.O. Box 3690
Sveavägen 63
103 59 Stockholm / SE
[N/P]
Former [2020/09]Brann AB
P.O. Box 3690
Drottninggatan 27
103 59 Stockholm / SE
Former [2015/32]Brann AB
P.O. Box 12246
102 26 Stockholm / SE
Application number, filing date13841291.127.09.2013
[2020/09]
WO2013SE51124
Priority number, dateSE2012005108927.09.2012         Original published format: SE 1251089
[2015/32]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2014051511
Date:03.04.2014
Language:EN
[2014/14]
Type: A2 Application without search report 
No.:EP2901475
Date:05.08.2015
Language:EN
The application published by WIPO in one of the EPO official languages on 03.04.2014 takes the place of the publication of the European patent application.
[2015/32]
Type: B1 Patent specification 
No.:EP2901475
Date:26.02.2020
Language:EN
[2020/09]
Search report(s)International search report - published on:SE22.05.2014
(Supplementary) European search report - dispatched on:EP05.04.2016
ClassificationIPC:H01L21/48, H01L21/768, H01L23/48, H01L23/498, // H01L21/288
[2019/34]
CPC:
H01L21/76898 (EP,SE,US); H01L21/76897 (US); H01L21/0217 (US);
H01L21/02381 (US); H01L21/02532 (US); H01L21/02595 (US);
H01L21/288 (EP,US); H01L21/486 (EP,SE,US); H01L21/76847 (US);
H01L21/76874 (EP,SE,US); H01L21/76879 (US); H01L21/76888 (US);
H01L21/76892 (US); H01L23/481 (EP,US); H01L23/49827 (EP,SE,US);
H01L23/5384 (SE); H01L2224/02372 (EP,US); H01L2224/02375 (EP,US);
H01L2224/03462 (EP,US); H01L2224/03464 (EP,US); H01L2224/05008 (EP,US);
H01L2224/05009 (EP,US); H01L2224/05155 (EP,US); H01L2224/05548 (EP,US);
H01L2224/05647 (EP,US); H01L2224/06181 (EP,US); H01L2224/27462 (SE);
H01L2224/27825 (SE); H01L23/49838 (EP,US); H01L24/03 (EP,US);
H01L24/05 (EP,US); H01L24/06 (EP,US); H01L2924/0002 (US);
H01L2924/10253 (EP,US) (-)
C-Set:
H01L2924/0002, H01L2924/00 (US)
Former IPC [2016/18]H01L21/768, H01L23/48
Former IPC [2015/32]H01L21/768, H01L23/48, H01L23/52
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2015/32]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER SILIZIUMDURCHKONTAKTIERUNG DURCH STROMLOSE METALLABSCHEIDUNG, UND ZUGEHÖRIGES HALBLEITERBAUELELEMNT[2019/34]
English:METHOD FOR FORMING A THROUGH-SILICON VIA BY ELECTROLESS METAL DEPOSITION, AND CORRESPONDING SEMICONDUCTOR DEVICE[2019/34]
French:PROCÉDÉ DE FABRICATION D'UNE INTERCONNEXION VERTICALE TRAVERSANTE PAR DÉPÔT AUTOCATALYTIQUE DE MÉTAL, ET DISPOSITIF SEMICONDUCTEUR CORRESPONDANT[2019/34]
Former [2015/32]STROMLOSE METALLBOHRUNG DURCH EINEN SILICIUMDURCHGANG
Former [2015/32]ELECTROLESS METAL THROUGH SILICON VIA
Former [2015/32]TROU D'INTERCONNEXION DE SILICIUM TRAVERSANT UN MÉTAL AUTOCATALYTIQUE
Entry into regional phase15.04.2015National basic fee paid 
15.04.2015Search fee paid 
15.04.2015Designation fee(s) paid 
15.04.2015Examination fee paid 
Examination procedure15.04.2015Examination requested  [2015/32]
29.09.2016Amendment by applicant (claims and/or description)
26.02.2019Despatch of a communication from the examining division (Time limit: M04)
05.07.2019Reply to a communication from the examining division
19.09.2019Communication of intention to grant the patent
13.01.2020Fee for grant paid
13.01.2020Fee for publishing/printing paid
13.01.2020Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  26.02.2019
Opposition(s)27.11.2020No opposition filed within time limit [2021/05]
Fees paidRenewal fee
14.09.2015Renewal fee patent year 03
26.09.2016Renewal fee patent year 04
20.09.2017Renewal fee patent year 05
24.09.2018Renewal fee patent year 06
23.09.2019Renewal fee patent year 07
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Lapses during opposition  TooltipHU27.09.2013
AL26.02.2020
AT26.02.2020
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
MK26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE27.09.2020
LU27.09.2020
BE30.09.2020
CH30.09.2020
LI30.09.2020
[2022/31]
Former [2022/30]HU27.09.2013
AL26.02.2020
AT26.02.2020
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE27.09.2020
LU27.09.2020
BE30.09.2020
CH30.09.2020
LI30.09.2020
Former [2022/27]HU27.09.2013
AT26.02.2020
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
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MC26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE27.09.2020
LU27.09.2020
BE30.09.2020
CH30.09.2020
LI30.09.2020
Former [2022/26]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE27.09.2020
LU27.09.2020
BE30.09.2020
CH30.09.2020
LI30.09.2020
Former [2021/37]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE27.09.2020
LU27.09.2020
BE30.09.2020
CH30.09.2020
LI30.09.2020
Former [2021/36]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
LU27.09.2020
BE30.09.2020
Former [2021/27]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
LU27.09.2020
Former [2021/23]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2021/10]AT26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
IT26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/50]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/49]CZ26.02.2020
DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/48]DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/47]DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/45]FI26.02.2020
HR26.02.2020
LV26.02.2020
NL26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/40]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/39]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
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Former [2020/38]FI26.02.2020
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GR27.05.2020
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HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
NO26.05.2020
Former [2020/35]FI26.02.2020
NO26.05.2020
Documents cited:Search[A]US5608264  (GAUL STEPHEN J [US]) [A] 1-15 * column 9, line 25 - column 10, line 24; figures 4.11-4.14 *;
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 [A]US2006043598  (KIRBY KYLE K [US], et al) [A] 1-15* paragraphs [0088] - [0100]; figures 3A-3E *;
 [XY]US2009160058  (KUO CHEN-CHENG [TW], et al) [X] 13 * paragraphs [0023] - [0033]; figures 3-9 * [Y] 15;
 [X]EP2500930  (MITSUBISHI GAS CHEMICAL CO [JP]) [X] 13 * paragraphs [0040] - [0046] - [0 55]; figures 3, 6, 7 *
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 [A]  - INOUE, F ET AL., "Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier", INTERCONNECT TECHNOLOGY CONFERENCE, 2009. IITC 2009., (20090601), pages 167 - 168, XP031477569
by applicantUS2002179921
 US7276789
 EP1987535
 WO2010059188
 WO2010133550
    - RICHARD et al., "Barrier and Copper Seed Layer Wet Etching", Solid State Phenomena, (20050000), vol. 103-104, pages 361 - 364
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.