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Extract from the Register of European Patents

EP About this file: EP2985614

EP2985614 - PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  02.04.2022
Database last updated on 02.11.2024
FormerGrant of patent is intended
Status updated on  11.07.2021
Most recent event   Tooltip02.04.2022Application deemed to be withdrawnpublished on 04.05.2022  [2022/18]
Applicant(s)For all designated states
Renesas Electronics Corporation
2-24, Toyosu 3-chome
Koutou-ku
Tokyo 135-0061 / JP
[2016/07]
Inventor(s)01 / ISHII, Toshitsugu
c/o Renesas Semiconductor Manufacturing Co., Ltd.
751, Horiguchi
Hitachinaka-shi
Ibaraki 312-8504 / JP
02 / MAKIHIRA, Naohiro
c/o Renesas Electronics Corporation
2-24, Toyosu 3-chome
Koutou-ku
Tokyo 135-0061 / JP
03 / IWASAKI, Hidekazu
c/o Renesas Electronics Corporation
2-24, Toyosu 3-chome
Koutou-ku
Tokyo 135-0061 / JP
04 / MATSUHASHI, Jun
c/o Renesas Electronics Corporation
2-24, Toyosu 3-chome
Koutou-ku
Tokyo 135-0061 / JP
 [2016/07]
Representative(s)Mewburn Ellis LLP
Aurora Building
Counterslip
Bristol BS1 6BX / GB
[N/P]
Former [2016/07]Moore, Graeme Patrick, et al
Mewburn Ellis LLP
City Tower
40 Basinghall Street
London EC2V 5DE / GB
Application number, filing date13882020.411.04.2013
[2016/07]
WO2013JP60967
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2014167693
Date:16.10.2014
Language:JA
[2014/42]
Type: A1 Application with search report 
No.:EP2985614
Date:17.02.2016
Language:EN
[2016/07]
Search report(s)International search report - published on:JP16.10.2014
(Supplementary) European search report - dispatched on:EP18.11.2016
ClassificationIPC:G01R1/067, G01R31/40, H01L23/00, // G01R1/04, G01R31/28
[2021/28]
CPC:
H01L24/97 (EP,US); H01L22/14 (US); G01R1/06738 (EP,US);
G01R31/40 (EP,US); H01L24/36 (US); H01L24/37 (EP,US);
H01L24/40 (EP,US); H01L25/50 (US); G01R1/0466 (EP,US);
G01R1/0483 (EP,US); G01R31/2874 (EP,US); H01L2224/0603 (EP);
H01L2224/32245 (EP,US); H01L2224/37147 (EP,US); H01L2224/40095 (EP,US);
H01L2224/40245 (EP,US); H01L2224/48137 (EP,US); H01L2224/48247 (EP,US);
H01L2224/73221 (EP,US); H01L2224/73265 (EP,US); H01L2224/83801 (EP,US);
H01L2224/84801 (EP,US); H01L2224/97 (EP,US); H01L24/84 (EP);
H01L2924/00014 (EP,US); H01L2924/13091 (EP,US); H01L2924/181 (EP,US) (-)
C-Set:
H01L2224/73221, H01L2224/40245, H01L2224/48247, H01L2924/00 (EP);
H01L2224/73265, H01L2224/32245, H01L2224/48247, H01L2924/00 (US,EP);
H01L2224/83801, H01L2924/00014 (EP,US);
H01L2224/84801, H01L2924/00014 (EP,US);
H01L2224/97, H01L2224/73265, H01L2224/32245, H01L2224/48247, H01L2924/00 (US,EP);
H01L2924/00014, H01L2224/37099 (EP,US);
H01L2924/13091, H01L2924/00 (US,EP);
H01L2924/181, H01L2924/00012 (US,EP)
(-)
Former IPC [2016/51]G01R1/067, G01R31/40, // G01R1/04, G01R31/28
Former IPC [2016/07]G01R31/26
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/07]
TitleGerman:HERSTELLUNGSVERFAHREN FÜR EIN HALBLEITERBAUELEMENT[2016/07]
English:PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE[2016/07]
French:PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS[2016/07]
Entry into regional phase24.09.2015Translation filed 
29.09.2015National basic fee paid 
29.09.2015Search fee paid 
29.09.2015Designation fee(s) paid 
29.09.2015Examination fee paid 
Examination procedure29.09.2015Examination requested  [2016/07]
16.06.2017Amendment by applicant (claims and/or description)
12.07.2021Communication of intention to grant the patent
23.11.2021Application deemed to be withdrawn, date of legal effect  [2022/18]
14.12.2021Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2022/18]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  12.07.2021
Fees paidRenewal fee
29.09.2015Renewal fee patent year 03
24.03.2016Renewal fee patent year 04
25.04.2017Renewal fee patent year 05
25.04.2018Renewal fee patent year 06
25.04.2019Renewal fee patent year 07
28.04.2020Renewal fee patent year 08
26.04.2021Renewal fee patent year 09
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Documents cited:Search[X]US6344753  (TAKADA SHIGERU [JP], et al) [X] 1,9,10 * column 1, line 23 - column 2, line 28; figure 10 * * column 3, line 64 - column 12, line 64; figures 1-10 *;
 [Y]US2003075796  (HATA TOSHIYUKI [JP], et al) [Y] 1-16 * paragraph [0036] - paragraph [0072]; figures 1-6 *;
 [Y]US6794890  (TOKUMO YASUSHI [JP], et al) [Y] 1-16 * column 8, line 18 - column 12, line 12; figures 1,11 *;
 [Y]JP2007024613  (GENESIS TECHNOLOGY INC) [Y] 1-16* the whole document *;
 [Y]EP1826575  (SHELL DENNIS B [US], et al) [Y] 1-16 * paragraph [0013] - paragraph [0024]; figures 1-3 *;
 [Y]US2010059875  (SATO YUKIHIRO [JP], et al) [Y] 1-16 * paragraph [0098] - paragraph [0106]; figures 1,6-15,30-33 *;
 [Y]US2010093229  (ELDRIDGE BENJAMIN N [US], et al) [Y] 1-16 * paragraph [0022]; figure 4F *
International search[Y]JP2002071748  (MITSUBISHI ELECTRIC CORP);
 [Y]JP2005277168  (NEC ELECTRONICS CORP);
 [Y]JP2007096196  (RENESAS TECH CORP);
 [Y]JP2010273541  (RENESAS ELECTRONICS CORP);
 [Y]JP2012220438  (RENESAS ELECTRONICS CORP)
by applicantJP2002071716
 JP2010067755
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.