EP2985614 - PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 02.04.2022 Database last updated on 02.11.2024 | |
Former | Grant of patent is intended Status updated on 11.07.2021 | Most recent event Tooltip | 02.04.2022 | Application deemed to be withdrawn | published on 04.05.2022 [2022/18] | Applicant(s) | For all designated states Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP | [2016/07] | Inventor(s) | 01 /
ISHII, Toshitsugu c/o Renesas Semiconductor Manufacturing Co., Ltd. 751, Horiguchi Hitachinaka-shi Ibaraki 312-8504 / JP | 02 /
MAKIHIRA, Naohiro c/o Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP | 03 /
IWASAKI, Hidekazu c/o Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP | 04 /
MATSUHASHI, Jun c/o Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP | [2016/07] | Representative(s) | Mewburn Ellis LLP Aurora Building Counterslip Bristol BS1 6BX / GB | [N/P] |
Former [2016/07] | Moore, Graeme Patrick, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB | Application number, filing date | 13882020.4 | 11.04.2013 | [2016/07] | WO2013JP60967 | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2014167693 | Date: | 16.10.2014 | Language: | JA | [2014/42] | Type: | A1 Application with search report | No.: | EP2985614 | Date: | 17.02.2016 | Language: | EN | [2016/07] | Search report(s) | International search report - published on: | JP | 16.10.2014 | (Supplementary) European search report - dispatched on: | EP | 18.11.2016 | Classification | IPC: | G01R1/067, G01R31/40, H01L23/00, // G01R1/04, G01R31/28 | [2021/28] | CPC: |
H01L24/97 (EP,US);
H01L22/14 (US);
G01R1/06738 (EP,US);
G01R31/40 (EP,US);
H01L24/36 (US);
H01L24/37 (EP,US);
H01L24/40 (EP,US);
H01L25/50 (US);
G01R1/0466 (EP,US);
G01R1/0483 (EP,US);
G01R31/2874 (EP,US);
H01L2224/0603 (EP);
H01L2224/32245 (EP,US);
H01L2224/37147 (EP,US);
H01L2224/40095 (EP,US);
H01L2224/40245 (EP,US);
H01L2224/48137 (EP,US);
H01L2224/48247 (EP,US);
H01L2224/73221 (EP,US);
H01L2224/73265 (EP,US);
H01L2224/83801 (EP,US);
H01L2224/84801 (EP,US);
H01L2224/97 (EP,US);
H01L24/84 (EP);
| C-Set: |
H01L2224/73221, H01L2224/40245, H01L2224/48247, H01L2924/00 (EP);
H01L2224/73265, H01L2224/32245, H01L2224/48247, H01L2924/00 (US,EP);
H01L2224/83801, H01L2924/00014 (EP,US);
H01L2224/84801, H01L2924/00014 (EP,US);
H01L2224/97, H01L2224/73265, H01L2224/32245, H01L2224/48247, H01L2924/00 (US,EP);
H01L2924/00014, H01L2224/37099 (EP,US); |
Former IPC [2016/51] | G01R1/067, G01R31/40, // G01R1/04, G01R31/28 | ||
Former IPC [2016/07] | G01R31/26 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2016/07] | Title | German: | HERSTELLUNGSVERFAHREN FÜR EIN HALBLEITERBAUELEMENT | [2016/07] | English: | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE | [2016/07] | French: | PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS | [2016/07] | Entry into regional phase | 24.09.2015 | Translation filed | 29.09.2015 | National basic fee paid | 29.09.2015 | Search fee paid | 29.09.2015 | Designation fee(s) paid | 29.09.2015 | Examination fee paid | Examination procedure | 29.09.2015 | Examination requested [2016/07] | 16.06.2017 | Amendment by applicant (claims and/or description) | 12.07.2021 | Communication of intention to grant the patent | 23.11.2021 | Application deemed to be withdrawn, date of legal effect [2022/18] | 14.12.2021 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2022/18] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 12.07.2021 | Fees paid | Renewal fee | 29.09.2015 | Renewal fee patent year 03 | 24.03.2016 | Renewal fee patent year 04 | 25.04.2017 | Renewal fee patent year 05 | 25.04.2018 | Renewal fee patent year 06 | 25.04.2019 | Renewal fee patent year 07 | 28.04.2020 | Renewal fee patent year 08 | 26.04.2021 | Renewal fee patent year 09 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US6344753 (TAKADA SHIGERU [JP], et al) [X] 1,9,10 * column 1, line 23 - column 2, line 28; figure 10 * * column 3, line 64 - column 12, line 64; figures 1-10 *; | [Y]US2003075796 (HATA TOSHIYUKI [JP], et al) [Y] 1-16 * paragraph [0036] - paragraph [0072]; figures 1-6 *; | [Y]US6794890 (TOKUMO YASUSHI [JP], et al) [Y] 1-16 * column 8, line 18 - column 12, line 12; figures 1,11 *; | [Y]JP2007024613 (GENESIS TECHNOLOGY INC) [Y] 1-16* the whole document *; | [Y]EP1826575 (SHELL DENNIS B [US], et al) [Y] 1-16 * paragraph [0013] - paragraph [0024]; figures 1-3 *; | [Y]US2010059875 (SATO YUKIHIRO [JP], et al) [Y] 1-16 * paragraph [0098] - paragraph [0106]; figures 1,6-15,30-33 *; | [Y]US2010093229 (ELDRIDGE BENJAMIN N [US], et al) [Y] 1-16 * paragraph [0022]; figure 4F * | International search | [Y]JP2002071748 (MITSUBISHI ELECTRIC CORP); | [Y]JP2005277168 (NEC ELECTRONICS CORP); | [Y]JP2007096196 (RENESAS TECH CORP); | [Y]JP2010273541 (RENESAS ELECTRONICS CORP); | [Y]JP2012220438 (RENESAS ELECTRONICS CORP) | by applicant | JP2002071716 | JP2010067755 |