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Extract from the Register of European Patents

EP About this file: EP2760029

EP2760029 - Dielectric thin film-forming composition and method of forming dielectric thin film using the same [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  11.08.2017
Database last updated on 12.11.2024
FormerExamination is in progress
Status updated on  25.11.2016
Most recent event   Tooltip11.08.2017Application deemed to be withdrawnpublished on 13.09.2017  [2017/37]
Applicant(s)For all designated states
Mitsubishi Materials Corporation
3-2, Otemachi 1-chome Chiyoda-ku
Tokyo 100-8117 / JP
[2014/31]
Inventor(s)01 / Fujii, Jun
c/o Mitsubishi Materials Corporation
Central Research Institute
1002-14, Mukohyama, Naka-shi, Ibaraki-ken
Naka-shi, Ibaraki / JP
02 / Watanabe, Toshiaki
c/o Mitsubishi Materials Corporation
Sanda Plant
12-6, Technopark, Sanda-shi, Hyogo-ken
Sanda-shi, Hyogo / JP
03 / Sakurai, Hideaki
c/o Mitsubishi Materials Corporation
Central Research Institute
1002-14, Mukohyama, Naka-shi, Ibaraki-ken
Naka-shi, Ibaraki / JP
04 / Soyama, Nobuyuki
c/o Mitsubishi Materials Corporation
Central Research Institute
1002-14, Mukohyama, Naka-shi, Ibaraki-ken
Naka-shi, Ibaraki / JP
 [2014/31]
Representative(s)Gille Hrabal Partnerschaftsgesellschaft mbB Patentanwälte
Brucknerstraße 20
40593 Düsseldorf / DE
[N/P]
Former [2014/31]Gille Hrabal
Brucknerstrasse 20
40593 Düsseldorf / DE
Application number, filing date14152366.224.01.2014
[2014/31]
Priority number, dateJP2013001311228.01.2013         Original published format: JP 2013013112
[2014/31]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2760029
Date:30.07.2014
Language:EN
[2014/31]
Search report(s)(Supplementary) European search report - dispatched on:EP27.05.2014
ClassificationIPC:H01B3/12
[2014/31]
CPC:
H01B3/12 (EP,US); H01G4/1227 (US); H01G4/33 (US)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2014/31]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:Zusammensetzung zur Bildung einer dielektrischen Dünnschicht und Verfahren zur Bildung einer dielektrischen Dünnschicht damit[2014/31]
English:Dielectric thin film-forming composition and method of forming dielectric thin film using the same[2014/31]
French:Composition de formation de film mince diélectrique et procédé de formation d'un film mince diélectrique utilisant celle-ci[2014/31]
Examination procedure15.12.2014Examination requested  [2015/04]
17.12.2014Amendment by applicant (claims and/or description)
23.11.2016Despatch of a communication from the examining division (Time limit: M04)
04.04.2017Application deemed to be withdrawn, date of legal effect  [2017/37]
04.05.2017Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2017/37]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  23.11.2016
Fees paidRenewal fee
21.01.2016Renewal fee patent year 03
Penalty fee
Additional fee for renewal fee
31.01.201704   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US6391707  (DIRNECKER CHRISTOPH [DE], et al) [A] 1-11* claims 1,20 *;
 [A]US2004142528  (BHATTACHARYYA ARUP [US]) [A] 1-11 * claim 22 *;
 [I]US2006284233  (SUH SEIGI [US], et al) [I] 1-11 * paragraphs [0077] - [0078] - [0085] - [0086]; examples 9,13; claims 1-11 *;
 [X]  - CHONG K B ET AL, "Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, (20040201), vol. 95, no. 3, doi:10.1063/1.1638615, ISSN 0021-8979, pages 1416 - 1419, XP012067304 [X] 1-11 * figure 3; table 1 *

DOI:   http://dx.doi.org/10.1063/1.1638615
 [X]  - LIANG X ET AL, "Dielectric and tunable characteristics of barium strontium titanate modified with Al2O3 addition", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, (20030525), vol. 99, no. 1-3, doi:10.1016/S0921-5107(02)00461-0, ISSN 0921-5107, pages 366 - 369, XP004433385 [X] 1-11 * figures 3,6 *

DOI:   http://dx.doi.org/10.1016/S0921-5107(02)00461-0
by applicantJPS60236404
 JP2007005804
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.