EP2760029 - Dielectric thin film-forming composition and method of forming dielectric thin film using the same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 11.08.2017 Database last updated on 12.11.2024 | |
Former | Examination is in progress Status updated on 25.11.2016 | Most recent event Tooltip | 11.08.2017 | Application deemed to be withdrawn | published on 13.09.2017 [2017/37] | Applicant(s) | For all designated states Mitsubishi Materials Corporation 3-2, Otemachi 1-chome Chiyoda-ku Tokyo 100-8117 / JP | [2014/31] | Inventor(s) | 01 /
Fujii, Jun c/o Mitsubishi Materials Corporation Central Research Institute 1002-14, Mukohyama, Naka-shi, Ibaraki-ken Naka-shi, Ibaraki / JP | 02 /
Watanabe, Toshiaki c/o Mitsubishi Materials Corporation Sanda Plant 12-6, Technopark, Sanda-shi, Hyogo-ken Sanda-shi, Hyogo / JP | 03 /
Sakurai, Hideaki c/o Mitsubishi Materials Corporation Central Research Institute 1002-14, Mukohyama, Naka-shi, Ibaraki-ken Naka-shi, Ibaraki / JP | 04 /
Soyama, Nobuyuki c/o Mitsubishi Materials Corporation Central Research Institute 1002-14, Mukohyama, Naka-shi, Ibaraki-ken Naka-shi, Ibaraki / JP | [2014/31] | Representative(s) | Gille Hrabal Partnerschaftsgesellschaft mbB Patentanwälte Brucknerstraße 20 40593 Düsseldorf / DE | [N/P] |
Former [2014/31] | Gille Hrabal Brucknerstrasse 20 40593 Düsseldorf / DE | Application number, filing date | 14152366.2 | 24.01.2014 | [2014/31] | Priority number, date | JP20130013112 | 28.01.2013 Original published format: JP 2013013112 | [2014/31] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2760029 | Date: | 30.07.2014 | Language: | EN | [2014/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.05.2014 | Classification | IPC: | H01B3/12 | [2014/31] | CPC: |
H01B3/12 (EP,US);
H01G4/1227 (US);
H01G4/33 (US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/31] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht und Verfahren zur Bildung einer dielektrischen Dünnschicht damit | [2014/31] | English: | Dielectric thin film-forming composition and method of forming dielectric thin film using the same | [2014/31] | French: | Composition de formation de film mince diélectrique et procédé de formation d'un film mince diélectrique utilisant celle-ci | [2014/31] | Examination procedure | 15.12.2014 | Examination requested [2015/04] | 17.12.2014 | Amendment by applicant (claims and/or description) | 23.11.2016 | Despatch of a communication from the examining division (Time limit: M04) | 04.04.2017 | Application deemed to be withdrawn, date of legal effect [2017/37] | 04.05.2017 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2017/37] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 23.11.2016 | Fees paid | Renewal fee | 21.01.2016 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 31.01.2017 | 04   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US6391707 (DIRNECKER CHRISTOPH [DE], et al) [A] 1-11* claims 1,20 *; | [A]US2004142528 (BHATTACHARYYA ARUP [US]) [A] 1-11 * claim 22 *; | [I]US2006284233 (SUH SEIGI [US], et al) [I] 1-11 * paragraphs [0077] - [0078] - [0085] - [0086]; examples 9,13; claims 1-11 *; | [X] - CHONG K B ET AL, "Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, (20040201), vol. 95, no. 3, doi:10.1063/1.1638615, ISSN 0021-8979, pages 1416 - 1419, XP012067304 [X] 1-11 * figure 3; table 1 * DOI: http://dx.doi.org/10.1063/1.1638615 | [X] - LIANG X ET AL, "Dielectric and tunable characteristics of barium strontium titanate modified with Al2O3 addition", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, (20030525), vol. 99, no. 1-3, doi:10.1016/S0921-5107(02)00461-0, ISSN 0921-5107, pages 366 - 369, XP004433385 [X] 1-11 * figures 3,6 * DOI: http://dx.doi.org/10.1016/S0921-5107(02)00461-0 | by applicant | JPS60236404 | JP2007005804 |