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Extract from the Register of European Patents

EP About this file: EP2846367

EP2846367 - Semiconductor light emitting device and method for manufacturing same [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  15.01.2016
Database last updated on 03.10.2024
Most recent event   Tooltip15.01.2016Withdrawal of applicationpublished on 17.02.2016  [2016/07]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
1-1, Shibaura 1-Chome Minato-Ku
Tokyo 105-8001 / JP
[2015/11]
Inventor(s)01 / Akimoto, Yosuke
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
02 / Kojima, Akihiro
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
03 / Shimada, Miyoko
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
04 / Tomizawa, Hideyuki
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
05 / Sugizaki, Yoshiaki
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
06 / Furuyama, Hideto
c/o Intellectual Property Division
Toshiba Corporation
1-1, Shibaura 1-chome
Minato-ku, Tokyo 105-8001 / JP
 [2015/11]
Representative(s)Hoffmann Eitle
Patent- und Rechtsanwälte PartmbB
Arabellastrasse 30
81925 München / DE
[2015/11]
Application number, filing date14157438.403.03.2014
[2015/11]
Priority number, dateJP2013018484606.09.2013         Original published format: JP 2013184846
[2015/11]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2846367
Date:11.03.2015
Language:EN
[2015/11]
Search report(s)(Supplementary) European search report - dispatched on:EP02.02.2015
ClassificationIPC:H01L33/50, // H01L33/00, H01L33/44, H01L33/38, H01L33/48
[2015/11]
CPC:
H01L33/504 (EP,US); H01L33/52 (KR); H01L33/50 (KR);
H01L33/505 (EP,US); H01L33/54 (KR); H01L2933/0041 (EP,US);
H01L2933/0091 (EP,US); H01L33/0093 (EP,US); H01L33/38 (EP,US);
H01L33/44 (EP,US); H01L33/486 (EP,US); H01L33/501 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2015/11]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren[2015/11]
English:Semiconductor light emitting device and method for manufacturing same[2015/11]
French:Dispositif électroluminescent semi-conducteur et son procédé de fabrication[2015/11]
Examination procedure03.03.2014Examination requested  [2015/11]
03.08.2015Amendment by applicant (claims and/or description)
08.01.2016Application withdrawn by applicant  [2016/07]
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Documents cited:Search[XAYI]US2013207141  (REIHERZER JESSE [US]) [X] 1,3,7,14,16 * paragraphs [0036] , [0042]; figures 14, 410D * [A] 2,5,6,18-20 [Y] 8-13,15,17 [I] 4;
 [Y]US2011300644  (AKIMOTO YOSUKE [JP], et al) [Y] 8-13,15,17 * figure - *;
 [A]US2006125133  (HUH HYUN [KR], et al) [A] 18-20 * figure 4 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.