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EP2953162
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EP About this file: EP2953162
| EP2953162 - Method for manufacturing a semiconductor device comprising transistors each having a different effective work function [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 18.03.2022 Database last updated on 03.09.2024 | |
| Former | Examination is in progress Status updated on 12.10.2018 | Most recent event Tooltip | 18.03.2022 | Application deemed to be withdrawn | published on 20.04.2022 [2022/16] | Applicant(s) | For all designated states IMEC VZW Kapeldreef 75 3001 Leuven / BE | [2015/50] | Inventor(s) | 01 /
Ragnarsson, Lars-Ake IP Department Kapeldreef 75 3001 Leuven / BE | 02 /
Schram, Tom IP Department Kapeldreef 75 3001 Leuven / BE | 03 /
Dekkers, Hendrik F.W. IP Department Kapeldreef 75 3001 Leuven / BE | 04 /
Chew, Soon Aik IP Department Kapeldreef 75 3001 Leuven / BE | [2015/50] | Representative(s) | Winger Hundelgemsesteenweg 1116 9820 Merelbeke / BE | [N/P] |
| Former [2015/50] | Kirkpatrick Avenue Wolfers, 32 1310 La Hulpe / BE | Application number, filing date | 14171559.9 | 06.06.2014 | [2015/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2953162 | Date: | 09.12.2015 | Language: | EN | [2015/50] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.11.2014 | Classification | IPC: | H01L21/8234, H01L21/8238 | [2015/50] | CPC: |
H01L21/82345 (EP,US);
H10B20/00 (US);
H01L21/28088 (US);
H01L21/28556 (US);
H01L21/823842 (EP,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2016/29] |
| Former [2015/50] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Verfahren zur Herstellung einer Halbleiterbauelements mit Transistoren mit unterschiedlicher effektiver Austrittsarbeit | [2015/50] | English: | Method for manufacturing a semiconductor device comprising transistors each having a different effective work function | [2015/50] | French: | Procédé de fabrication d'un dispositif à semi-conducteur comprenant des transistors ayant chacun une valeur de travail de sortie différente | [2015/50] | Examination procedure | 09.06.2016 | Amendment by applicant (claims and/or description) | 09.06.2016 | Examination requested [2016/29] | 12.10.2018 | Despatch of a communication from the examining division (Time limit: M04) | 21.02.2019 | Reply to a communication from the examining division | 01.07.2019 | Despatch of a communication from the examining division (Time limit: M06) | 13.01.2020 | Reply to a communication from the examining division | 10.05.2021 | Despatch of a communication from the examining division (Time limit: M06) | 23.11.2021 | Application deemed to be withdrawn, date of legal effect [2022/16] | 10.12.2021 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2022/16] | Fees paid | Renewal fee | 23.06.2016 | Renewal fee patent year 03 | 22.06.2017 | Renewal fee patent year 04 | 22.06.2018 | Renewal fee patent year 05 | 21.06.2019 | Renewal fee patent year 06 | 22.06.2020 | Renewal fee patent year 07 | 23.06.2021 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI]US2010301427 (LENSKI MARKUS [DE], et al) [X] 1,2,4-7,10 * paragraphs [0009] , [0010] , [0025] , [0033] , [0034] , [0038] - [0041]; figure 2 * [Y] 3,8,9 [I] 11,12; | [I]US2012309181 (MACHKAOUTSAN VLADIMIR [BE], et al) [I] 1,2,4-7,10-12 * paragraphs [0027] , [0034] , [0058] - [0109]; figures 1c,9-12 *; | [A]US2013157449 (CAO JUNZHU [CN], et al) [A] 12* paragraphs [0035] , [0036] , [0043] *; | [Y]US2014054717 (EDGE LISA F [US], et al) [Y] 3,8,9 * paragraph [0029]; figures 2-10 * |