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EP2959514
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EP About this file: EP2959514
| EP2959514 - GRAPHENE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS [Right-click to bookmark this link] | Status | The application has been refused Status updated on 11.03.2022 Database last updated on 16.11.2024 | |
| Former | Examination is in progress Status updated on 20.04.2020 | Most recent event Tooltip | 11.03.2022 | Refusal of application | published on 13.04.2022 [2022/15] | Applicant(s) | For all designated states HRL Laboratories, LLC 3011 Malibu Canyon Road Malibu, CA 90265-4799 / US | [2016/01] | Inventor(s) | 01 /
MOON, Jeong-Sun 14217 Shawnee Court Moorpark, California 93021 / US | [2016/01] | Representative(s) | Farrington, Graham, et al Ladas & Parry London Limited Temple Chambers 3-7 Temple Avenue London EC4Y 0DA / GB | [2016/01] | Application number, filing date | 14754635.2 | 20.01.2014 | [2016/01] | WO2014US12218 | Priority number, date | US201361767922P | 22.02.2013 Original published format: US 201361767922 P | [2016/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2014130185 | Date: | 28.08.2014 | Language: | EN | [2014/35] | Type: | A1 Application with search report | No.: | EP2959514 | Date: | 30.12.2015 | Language: | EN | The application published by WIPO in one of the EPO official languages on 28.08.2014 takes the place of the publication of the European patent application. | [2015/53] | Search report(s) | International search report - published on: | KR | 28.08.2014 | (Supplementary) European search report - dispatched on: | EP | 30.09.2016 | Classification | IPC: | H01L29/739, H01L29/10, H01L29/778, H01L21/336, H01L29/165, // H01L29/45 | [2016/44] | CPC: |
H01L29/66045 (EP,US);
H01L29/0657 (US);
H01L29/1033 (EP,US);
H01L29/1054 (EP,US);
H01L29/1606 (EP,US);
H01L29/165 (EP,US);
H01L29/167 (US);
H01L29/51 (US);
H01L29/66431 (US);
H01L29/66742 (US);
H01L29/66977 (EP,US);
H01L29/778 (EP,US);
H01L29/78618 (US);
H01L29/78684 (US);
H01L29/78696 (US);
H01L29/45 (EP,US)
(-)
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| Former IPC [2016/01] | H01L29/78, H01L29/16, H01L21/336, H01L29/45 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2016/01] | Title | German: | FELDEFFEKTTRANSISTOR MIT GRAPHEN-HETEROSTRUKTUR | [2016/01] | English: | GRAPHENE HETEROSTRUCTURE FIELD EFFECT TRANSISTORS | [2016/01] | French: | TRANSISTORS À EFFET DE CHAMP À HÉTÉROSTRUCTURE DE GRAPHÈNE | [2016/01] | Entry into regional phase | 08.09.2015 | National basic fee paid | 08.09.2015 | Search fee paid | 08.09.2015 | Designation fee(s) paid | 08.09.2015 | Examination fee paid | Examination procedure | 15.12.2014 | Request for preliminary examination filed International Preliminary Examining Authority: US | 08.09.2015 | Examination requested [2015/53] | 11.04.2017 | Amendment by applicant (claims and/or description) | 23.04.2020 | Despatch of a communication from the examining division (Time limit: M04) | 18.08.2020 | Reply to a communication from the examining division | 23.09.2020 | Despatch of a communication from the examining division (Time limit: M04) | 30.12.2020 | Reply to a communication from the examining division | 22.11.2021 | Cancellation of oral proceeding that was planned for 31.03.2022 | 26.11.2021 | Despatch of communication that the application is refused, reason: substantive examination [2022/15] | 05.12.2021 | Application refused, date of legal effect [2022/15] | 31.03.2022 | Date of oral proceedings (cancelled) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 23.04.2020 | Fees paid | Renewal fee | 27.01.2016 | Renewal fee patent year 03 | 27.01.2017 | Renewal fee patent year 04 | 29.01.2018 | Renewal fee patent year 05 | 28.01.2019 | Renewal fee patent year 06 | 27.01.2020 | Renewal fee patent year 07 | 27.01.2021 | Renewal fee patent year 08 | Penalty fee | Additional fee for renewal fee | 31.01.2022 | 09 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2011269629 (GIUSTINO FELICIANO [GB], et al); | [A]US2012068157 (KUB FRANCIS J [US]); | [XI]US2012085991 (COHEN GUY [US], et al); | [XI]KR20120136118 (KUMOH NAT INST TECH ACAD COOP [KR]); | [E]EP2690664 (SAMSUNG ELECTRONICS CO LTD [KR]); | International search | [A]US2011303121 (GEIM ANDRE [GB], et al); | [X]US2012085991 (COHEN GUY [US], et al); | [A]WO2012051597 (UNIV CALIFORNIA [US], et al); | [A]KR20120068390 (SAMSUNG ELECTRONICS CO LTD [KR]); | [A]KR20120136118 (KUMOH NAT INST TECH ACAD COOP [KR]) | Examination | WO2009018395 | by applicant | US2011269629 | US2012085991 | KR20120136118 | EP2690664 | - L. BRITNELL ET AL., "Field-effect Tunneling transistor based on vertical graphene heterostructures", SCIENCE, (2012), vol. 335, page 947 | - H. YANG; J. HEO; S. PARK; H. J. SONG; D. H. SEO; K. E. BYUN; P. KIM; I. YOO; H. J. CHUNG; K. KIM, "Graphene Barristor, a triode device with a gate-controlled Schottky barrier", SCIENCE, (2012), vol. 336, page 6085 |