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Extract from the Register of European Patents

EP About this file: EP2983198

EP2983198 - METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  21.07.2017
Database last updated on 16.11.2024
FormerRequest for examination was made
Status updated on  06.04.2017
Most recent event   Tooltip21.07.2017Application deemed to be withdrawnpublished on 23.08.2017  [2017/34]
21.07.2017Change - inventorpublished on 23.08.2017  [2017/34]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku
Osaka-shi, Osaka 541-0041 / JP
[2016/06]
Inventor(s)01 / YAMADA, Satomi
c/o Osaka Works of
SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi, Osaka 554-0024 / JP
02 / TSUNO, Takashi
c/o Osaka Works of
SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi, Osaka 554-0024 / JP
 [2017/34]
Former [2016/06]01 / YAMADA, Satomi
c/o Osaka Works of
SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi Osaka 554-0024 / JP
02 / TSUNO, Takashi
c/o Osaka Works of
SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi Osaka 554-0024 / JP
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[2016/06]
Application number, filing date14778263.507.02.2014
[2016/06]
WO2014JP52861
Priority number, dateJP2013007574701.04.2013         Original published format: JP 2013075747
[2016/06]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2014162775
Date:09.10.2014
Language:JA
[2014/41]
Type: A1 Application with search report 
No.:EP2983198
Date:10.02.2016
Language:EN
[2016/06]
Search report(s)International search report - published on:JP09.10.2014
(Supplementary) European search report - dispatched on:EP03.08.2016
ClassificationIPC:H01L21/66, H01L21/336, H01L29/12, H01L29/78, H01L29/16, H01L21/78, // H01L29/66
[2016/35]
CPC:
H01L22/12 (EP,US); H01L21/02008 (EP); H01L21/02019 (EP);
H01L21/78 (US); H01L22/24 (EP,US); H01L29/12 (EP,US);
H01L29/1608 (EP,US); H01L29/78 (EP,US); H01L29/66068 (EP,US);
H01L29/7813 (EP,US) (-)
Former IPC [2016/06]H01L21/66, H01L21/336, H01L29/12, H01L29/78
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/06]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-HALBLEITERBAUELEMENTS[2016/06]
English:METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE[2016/06]
French:PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS EN CARBURE DE SILICIUM[2016/06]
Entry into regional phase01.09.2015Translation filed 
01.09.2015National basic fee paid 
01.09.2015Search fee paid 
01.09.2015Designation fee(s) paid 
01.09.2015Examination fee paid 
Examination procedure01.09.2015Examination requested  [2016/06]
02.03.2017Application deemed to be withdrawn, date of legal effect  [2017/34]
07.04.2017Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2017/34]
Fees paidRenewal fee
25.02.2016Renewal fee patent year 03
Penalty fee
Additional fee for renewal fee
28.02.201704   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US7201799  (VELIDANDLA VAMSI [US]) [A] 1-8 * column 6, line 49 - column 10, line 17 *;
 [IY]JP2007318031  (CENTRAL RES INST ELECT) [I] 1-5 * paragraphs [0001] , [0 39] , [0 40] , [0 42] - [0044] - [0 47] , [0 65] , [0 66] , [0 92] - [0095]; figures 1, 6 * [Y] 6-8;
 [Y]US2010119849  (NAKAMURA NOBUHIKO [JP], et al) [Y] 6-8 * paragraphs [0063] , [0 69] , [0 83] , [0 86] , [0 87] , [0 92] *;
 [A]US2011242312  (SEKI HIROKAZU [JP], et al) [A] 1-8 * paragraphs [0051] , [0 62] , [0 69] *;
 [A]US2012016630  (SHINTANI YOSHITOMO [JP], et al) [A] 1-8 * paragraphs [0034] - [0068] *;
 [A]US2013062629  (HIYOSHI TORU [JP], et al) [A] 1-8* the whole document *
International search[Y]JP2007318031  (CENTRAL RES INST ELECT);
 [Y]JP2012199573  (NIPPON STEEL CORP)
by applicant   - M. HOLZ, "Reliability consideration for recent Infineon SiC diode releases", MICROELECTRONICS RELIABILITY, (20070821), pages 1741 - 1745
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.