Extract from the Register of European Patents

EP About this file: EP3069389

EP3069389 - SEMICONDUCTOR LAYER SEQUENCE AND METHOD FOR PRODUCING THE SAME [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  11.10.2019
Database last updated on 26.03.2026
FormerGrant of patent is intended
Status updated on  07.01.2019
Most recent event   Tooltip11.10.2019Application deemed to be withdrawnpublished on 13.11.2019  [2019/46]
Applicant(s)For all designated states
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4
93055 Regensburg / DE
[2019/37]
Former [2016/38]For all designated states
OSRAM Opto Semiconductors GmbH
Leibnizstrasse 4
93055 Regensburg / DE
Inventor(s)01 / EBBECKE, Jens
Am Doppelfeld 7
93352 Rohr in Niederbayern / DE
02 / KAUSS, Claudia
Tassilostrasse 3 a
93083 Obertraubling / DE
03 / SUNDGREN, Petrus
Hochweg 7a
93138 Lappersdorf / DE
 [2016/38]
Representative(s)Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH
Schloßschmidstraße 5
80639 München / DE
[2016/38]
Application number, filing date14799686.204.11.2014
[2016/38]
WO2014EP73717
Priority number, dateDE20131011249013.11.2013         Original published format: DE102013112490
[2016/38]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2015071134
Date:21.05.2015
Language:DE
[2015/20]
Type: A1 Application with search report 
No.:EP3069389
Date:21.09.2016
Language:DE
The application published by WIPO in one of the EPO official languages on 21.05.2015 takes the place of the publication of the European patent application.
[2016/38]
Search report(s)International search report - published on:EP21.05.2015
ClassificationIPC:H01L33/06, H01L33/30, H01L33/00, H01L33/02, H01L33/08
[2018/51]
CPC:
H10H20/813 (EP,US); H10H20/013 (EP,US); H10H20/812 (US);
H10H20/8215 (EP,US); H10H20/824 (US)
Former IPC [2016/38]H01L33/00, H01L33/02, H01L33/08
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/38]
TitleGerman:HALBLEITERSCHICHTENFOLGE UND VERFAHREN ZU DEREN HERSTELLUNG[2016/38]
English:SEMICONDUCTOR LAYER SEQUENCE AND METHOD FOR PRODUCING THE SAME[2016/38]
French:SUCCESSION DE COUCHES DE SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE CELLE-CI[2016/38]
Entry into regional phase23.05.2016National basic fee paid 
23.05.2016Designation fee(s) paid 
23.05.2016Examination fee paid 
Examination procedure23.05.2016Examination requested  [2016/38]
09.09.2016Amendment by applicant (claims and/or description)
08.01.2019Communication of intention to grant the patent
21.05.2019Application deemed to be withdrawn, date of legal effect  [2019/46]
27.06.2019Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2019/46]
Fees paidRenewal fee
23.11.2016Renewal fee patent year 03
24.11.2017Renewal fee patent year 04
22.11.2018Renewal fee patent year 05
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Cited inInternational search[XYI] US2010148147  (BOUR DAVID P et al.) [X] 1 * paragraphs [0057] , [0061] , [0065] - [0074]; figures 7,22 *[Y] 6,7,11 [I] 2-5
 [Y] EP2403019  (LG INNOTEK CO LTD et al.) [Y] 6,7,11 * paragraphs [0037] - [0061]; figure 1 *
 [A] US6060727  (SHAKUDA YUKIO et al.) [A] 1-11 * the whole document *
 [A] WO0203479  (OSRAM OPTO SEMICONDUCTORS GMBH et al.) [A] 1-11 * the whole document *
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