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Extract from the Register of European Patents

EP About this file: EP3043376

EP3043376 - METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT [Right-click to bookmark this link]
Former [2016/28]SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT
[2020/29]
StatusNo opposition filed within time limit
Status updated on  07.01.2022
Database last updated on 26.07.2024
FormerThe patent has been granted
Status updated on  29.01.2021
FormerGrant of patent is intended
Status updated on  14.09.2020
FormerExamination is in progress
Status updated on  27.01.2020
Most recent event   Tooltip27.04.2024Lapse of the patent in a contracting state
New state(s): MK		published on 29.05.2024  [2024/22]
Applicant(s)For all designated states
Fuji Electric Co., Ltd.
1-1, Tanabeshinden
Kawasaki-ku
Kawasaki-shi, Kanagawa 210-9530 / JP
[2021/08]
Former [2016/28]For all designated states
Fuji Electric Co., Ltd.
1-1, Tanabeshinden
Kawasaki-ku
Kawasaki-shi, Kanagawa 210-9530 / JP
For all designated states
National Institute of Advanced Industrial Science and Technology
3-1, Kasumigaseki 1-chome
Chiyoda-ku
Tokyo 100-8921 / JP
Inventor(s)01 / UTSUMI, Makoto
c/o National Institute of Advanced Industrial
Science and Technology
Tsukuba Central 1
1-1, Umezono 1-chome, Tsukuba-shi
Ibaraki 305-8560 / JP
02 / SAKAI, Yoshiyuki
c/o National Institute of Advanced Industrial
Science and Technology
Tsukuba Central 1
1-1, Umezono 1-chome, Tsukuba-shi
Ibaraki 305-8560 / JP
03 / FUKUDA, Kenji
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
04 / HARADA, Shinsuke
c/o National Institute of Advanced Industrial
Science and Technology
Tsukuba Central 2
1-1 Umezono 1-Chome
Tsukuba-shi Ibaraki 305-8568 / JP
05 / OKAMOTO, Mitsuo
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
 [2021/09]
Former [2016/33]01 / UTSUMI, Makoto
c/o NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL
SCIENCE AND TECHNOLOGY
Tsukuba Central 1
1-1, Umezono 1-chome, Tsukuba-shi
Ibaraki 305-8560 / JP
02 / SAKAI, Yoshiyuki
c/o NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL
SCIENCE AND TECHNOLOGY
Tsukuba Central 1
1-1, Umezono 1-chome, Tsukuba-shi
Ibaraki 305-8560 / JP
03 / FUKUDA, Kenji
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
04 / HARADA, Shinsuke
c/o National Institute of Advanced Industrial
Science and Technology
Tsukuba Central 2
1-1 Umezono 1-Chome
Tsukuba-shi Ibaraki 305-8568 / JP
05 / OKAMOTO, Mitsuo
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
Former [2016/28]01 / UTSUMI, Makoto
c/o NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL
SCIENCE AND TECHNOLOGY
16-1, Onogawa, Tsukuba-shi
Ibaraki 305-8569 / JP
02 / SAKAI, Yoshiyuki
c/o NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL
SCIENCE AND TECHNOLOGY
16-1, Onogawa, Tsukuba-shi
Ibaraki 305-8569 / JP
03 / FUKUDA, Kenji
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
04 / HARADA, Shinsuke
c/o National Institute of Advanced Industrial
Science and Technology
Tsukuba Central 2
1-1 Umezono 1-Chome
Tsukuba-shi Ibaraki 305-8568 / JP
05 / OKAMOTO, Mitsuo
c/o National Institute of Advanced Industrial
Science and Technology
16-1 Onogawa
Tsukuba-shi Ibaraki 305-8569 / JP
Representative(s)MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
Paul-Heyse-Strasse 29
80336 München / DE
[2016/28]
Application number, filing date14842165.408.08.2014
[2016/28]
WO2014JP71122
Priority number, dateJP2013018451505.09.2013         Original published format: JP 2013184515
[2016/28]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2015033740
Date:12.03.2015
Language:JA
[2015/10]
Type: A1 Application with search report 
No.:EP3043376
Date:13.07.2016
Language:EN
[2016/28]
Type: B1 Patent specification 
No.:EP3043376
Date:03.03.2021
Language:EN
[2021/09]
Search report(s)International search report - published on:JP12.03.2015
(Supplementary) European search report - dispatched on:EP09.03.2017
ClassificationIPC:H01L21/28, H01L21/26, H01L21/336, H01L29/06, H01L29/16, H01L29/78, H01L21/04, H01L21/324
[2020/29]
CPC:
H01L29/1608 (EP,US); H01L21/0485 (EP,US); H01L21/283 (US);
H01L21/324 (EP,US); H01L29/45 (US); H01L29/66068 (EP,US);
H01L29/66477 (US); H01L29/7802 (EP,US) (-)
Former IPC [2016/28]H01L21/28, H01L21/26, H01L21/336, H01L29/06, H01L29/12, H01L29/78
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/28]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-HALBLEITERELEMENTS[2020/29]
English:METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT[2020/29]
French:PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT SEMI-CONDUCTEUR AU CARBURE DE SILICIUM[2020/29]
Former [2016/28]SILICIUMCARBID-HALBLEITERELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-HALBLEITERELEMENTS
Former [2016/28]SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT
Former [2016/28]ÉLÉMENT SEMI-CONDUCTEUR AU CARBURE DE SILICIUM ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT SEMI-CONDUCTEUR AU CARBURE DE SILICIUM
Entry into regional phase25.02.2016Translation filed 
25.02.2016National basic fee paid 
25.02.2016Search fee paid 
25.02.2016Designation fee(s) paid 
25.02.2016Examination fee paid 
Examination procedure25.02.2016Examination requested  [2016/28]
06.10.2017Amendment by applicant (claims and/or description)
30.01.2020Despatch of a communication from the examining division (Time limit: M04)
08.06.2020Reply to a communication from the examining division
15.09.2020Communication of intention to grant the patent
19.01.2021Fee for grant paid
19.01.2021Fee for publishing/printing paid
19.01.2021Receipt of the translation of the claim(s)
Opposition(s)06.12.2021No opposition filed within time limit [2022/06]
Fees paidRenewal fee
31.08.2016Renewal fee patent year 03
31.08.2017Renewal fee patent year 04
31.08.2018Renewal fee patent year 05
02.09.2019Renewal fee patent year 06
31.08.2020Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU08.08.2014
AL03.03.2021
AT03.03.2021
CY03.03.2021
CZ03.03.2021
DK03.03.2021
EE03.03.2021
ES03.03.2021
FI03.03.2021
HR03.03.2021
IT03.03.2021
LT03.03.2021
LV03.03.2021
MC03.03.2021
MK03.03.2021
NL03.03.2021
PL03.03.2021
RO03.03.2021
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BG03.06.2021
NO03.06.2021
GR04.06.2021
IS03.07.2021
PT05.07.2021
GB08.08.2021
IE08.08.2021
LU08.08.2021
BE31.08.2021
CH31.08.2021
FR31.08.2021
LI31.08.2021
[2024/22]
Former [2023/30]HU08.08.2014
AL03.03.2021
AT03.03.2021
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CZ03.03.2021
DK03.03.2021
EE03.03.2021
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FI03.03.2021
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MC03.03.2021
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GB08.08.2021
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IS03.07.2021
PT05.07.2021
LU08.08.2021
BE31.08.2021
CH31.08.2021
FR31.08.2021
LI31.08.2021
Former [2022/23]AL03.03.2021
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EE03.03.2021
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BG03.06.2021
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PT05.07.2021
LU08.08.2021
CH31.08.2021
LI31.08.2021
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Documents cited:Search[XYI]DE10051049  (DAIMLER CHRYSLER AG [DE]) [X] 1,4,8,9 * abstract * * paragraph [0002] - paragraph [0037]; figures 1, 2 * [Y] 3,5-7,10-14 [I] 2;
 [X]JP2003086534  (NISSAN MOTOR, et al) [X] 1,4 * abstract *;
 [Y]US2003168663  (SLATER DAVID B [US], et al) [Y] 14 * paragraph [0038] *
 [A]  - By R Ashokan ET AL, "IR Absorption Spectra of SiO, Films Grown by Photo-CVD", (19900101), URL: http://onlinelibrary.wiley.com/store/10.1002/pssa.2211210223/asset/2211210223_ftp.pdf?v=1&t=izfpjzdk&s=5fc3535f4523224590d2d9256c7bbb70b0c78736, (20170221), XP055348310 [A] 1,4 * abstract *
 [Y]  - HENRY B C ET AL, "Semiconductor structure with infrared energy absorption layer", IBM TECHNICAL DISCLOSURE BULLETIN, INTERNATIONAL BUSINESS MACHINES CORP. (THORNWOOD), US, (19790701), vol. 22, no. 2, ISSN 0018-8689, page 681, XP002086308 [Y] 10-13 * the whole document *
 [Y]  - DAVID D ALLRED ET AL, "SPECTRALLY SELECTIVE SURFACES BY CHEMICAL VAPOR DEPOSITION", SOLAR ENERGY MATERIALS,, (19850501), vol. 12, no. 12, pages 87 - 129, XP001309236 [Y] 3,5-7 * page 89 - page 97; table 1 *
International search[A]JP2008204972  (MATSUSHITA ELECTRIC IND CO LTD);
 [A]WO2011115294  (ADVANCED INTERCONNECT MATERIALS LLC [JP], et al);
 [A]JP2013016707  (HITACHI LTD);
 [A]JP2003229565  (MITSUBISHI ELECTRIC CORP);
 [A]JP2007101213  (RICOH KK);
 [A]JP2011222607  (MITSUBISHI ELECTRIC CORP);
 [A]JP2007149984  (ROHM CO LTD);
 [A]JP2007059646  (DENSO CORP)
Examination   - Nuggehalli M Ravindra ET AL, "Temperature-dependent emissivity of silicon-related materials and structures polymeric nitrogen View project Magnetic Field Assisted Robotic Assembly Machine View project Temperature-Dependent Emissivity of Silicon-Related Materials and Structures", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, doi:10.1109/66.661282.Source:, (19980101), URL: https://www.researchgate.net/profile/Nuggehalli_Ravindra/publication/3283643_Temperature-dependent_emissivity_of_silicon-related_materials_and_structures/links/55bf97b908ae9289a09b5c46/Temperature-dependent-emissivity-of-silicon-related-materials-and-structures.pdf, XP055660833

DOI:   http://dx.doi.org/10.1109/66.661282·Source:
by applicant   - ITO; KAZUHIRO ET AL., "Simultaneous Formation of Ni/Al Ohmic Contacts to Both n-and p-Type 4H-SiC", JOURNAL OF ELECTRONIC MATERIALS, (2008), vol. 37, no. 11, pages 1674 - 1680
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.