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Extract from the Register of European Patents

EP About this file: EP3178100

EP3178100 - ON-DIE INDUCTOR WITH IMPROVED Q-FACTOR [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  12.07.2019
Database last updated on 02.11.2024
FormerRequest for examination was made
Status updated on  12.05.2017
FormerThe international publication has been made
Status updated on  17.01.2017
Most recent event   Tooltip12.07.2019Withdrawal of applicationpublished on 14.08.2019  [2019/33]
Applicant(s)For all designated states
Intel Corporation
2200 Mission College Boulevard
Santa Clara, CA 95054 / US
[2017/24]
Inventor(s)01 / GOLDMAN, Richard, J.
Oakengates
Water Lane
Somerford Keynes
Cirencester, Gloucestershire GL7 6DS / GB
02 / SARASWAT, Ruchir
10 Collard Close
Swindon, Wiltshire SN1 7AS / GB
03 / ZILLMANN, Uwe
Fallsteinstrasse 2
38124 Braunschweig / DE
04 / COWLEY, Nicholas, P.
3 Priors Hill
Wroughton, Wiltshire SN4 0RT / GB
 [2017/24]
Representative(s)Goddar, Heinz J.
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2017/24]Goddar, Heinz J.
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Patentanwälte Rechtsanwälte
Pettenkoferstrasse 20-22
80336 München / DE
Application number, filing date14899125.007.08.2014
[2017/24]
WO2014US50133
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2016022124
Date:11.02.2016
Language:EN
[2016/06]
Type: A1 Application with search report 
No.:EP3178100
Date:14.06.2017
Language:EN
The application published by WIPO in one of the EPO official languages on 11.02.2016 takes the place of the publication of the European patent application.
[2017/24]
Search report(s)International search report - published on:KR11.02.2016
(Supplementary) European search report - dispatched on:EP21.12.2017
ClassificationIPC:H01F17/00, H01F27/28, H01F41/04
[2018/04]
CPC:
H01L23/645 (EP,US); H01F27/30 (KR); H01F17/0006 (EP,US);
H01F27/28 (KR); H01F27/2804 (US); H01F27/29 (KR);
H01F41/00 (KR); H01F41/041 (EP,US); H01L23/481 (EP,US);
H01L28/10 (EP,US); H01F2017/002 (EP,KR,US); H01L23/5227 (EP,US) (-)
Former IPC [2017/24]H01F17/00, H01F27/28
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2017/24]
TitleGerman:INDUKTOR AUF CHIP MIT VERBESSERTEM GÜTEFAKTOR[2017/24]
English:ON-DIE INDUCTOR WITH IMPROVED Q-FACTOR[2017/24]
French:INDUCTEUR SUR PUCE PRÉSENTANT UN MEILLEUR FACTEUR Q[2017/24]
Entry into regional phase17.01.2017National basic fee paid 
17.01.2017Search fee paid 
17.01.2017Designation fee(s) paid 
17.01.2017Examination fee paid 
Examination procedure17.01.2017Examination requested  [2017/24]
17.01.2017Date on which the examining division has become responsible
18.06.2018Amendment by applicant (claims and/or description)
08.07.2019Application withdrawn by applicant  [2019/33]
Fees paidRenewal fee
17.01.2017Renewal fee patent year 03
14.08.2017Renewal fee patent year 04
10.08.2018Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]JP2001223331  (SONY CORP);
 [X]JP2005223042  (MATSUSHITA ELECTRIC IND CO LTD);
 [X]US2008231402  (JOW UEI-MING [TW], et al);
 [XI]US2013154053  (YEN HSIAO-TSUNG [TW], et al)
International search[Y]US2002020895  (AHN KIE Y [US], et al);
 [A]US2004188674  (GATES STEPHEN MCCONNELL [US], et al);
 [Y]US2008048760  (EL RAI SAMIR [DE], et al);
 [A]US2011133880  (PITTS ROBERT L [US], et al);
 [A]US2011221560  (CHEN SHUXIAN [US], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.