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EP3180803
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EP About this file: EP3180803
| EP3180803 - SELF-ALIGNED GATE LAST III-N TRANSISTORS [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 12.07.2019 Database last updated on 02.11.2024 | |
| Former | Request for examination was made Status updated on 19.05.2017 | ||
| Former | The international publication has been made Status updated on 13.01.2017 | Most recent event Tooltip | 12.07.2019 | Withdrawal of application | published on 14.08.2019 [2019/33] | Applicant(s) | For all designated states Intel Corporation 2200 Mission College Boulevard Santa Clara, CA 95054 / US | [2017/25] | Inventor(s) | 01 /
THEN, Han Wui c/o Intel Corporation 2200 Mission College Boulevard M/S: RNB4-150 Santa Clara, CA 95054 / US | 02 /
DASGUPTA, Sansaptak 132 NE Greenridge Terrace Hillsboro, Oregon 97124 / US | 03 /
SUNG, Seung Moon 2459 NW Parnell Terrace Portland, Oregon 97229 / US | 04 /
GARDNER, Sanaz 19920 NW Cornwall Lane Hillsboro, Oregon 97124 / US | 05 /
RADOSAVLJEVIC, Marko c/o Intel Corporation 2200 Mission College Boulevard M/S: RNB4-150 Santa Clara, CA 95054 / US | 06 /
CHAU, Robert 8875 SW 171st Avenue Beaverton, Oregon 97007 / US | [2017/25] | Representative(s) | Goddar, Heinz J., et al Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [N/P] |
| Former [2017/25] | Goddar, Heinz J., et al Boehmert & Boehmert Anwaltspartnerschaft mbB Patentanwälte Rechtsanwälte Pettenkoferstrasse 20-22 80336 München / DE | Application number, filing date | 14899711.7 | 13.08.2014 | [2017/25] | WO2014US50826 | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2016024960 | Date: | 18.02.2016 | Language: | EN | [2016/07] | Type: | A1 Application with search report | No.: | EP3180803 | Date: | 21.06.2017 | Language: | EN | The application published by WIPO in one of the EPO official languages on 18.02.2016 takes the place of the publication of the European patent application. | [2017/25] | Search report(s) | International search report - published on: | KR | 18.02.2016 | (Supplementary) European search report - dispatched on: | EP | 12.03.2018 | Classification | IPC: | H01L29/778, H01L21/336, H01L21/338, H01L21/285, // H01L29/08, H01L29/423, H01L29/20 | [2018/15] | CPC: |
H01L29/401 (EP,US);
H01L29/7786 (EP,KR,US);
H01L29/41783 (US);
H01L21/28587 (EP,KR,US);
H01L29/0843 (EP,KR,US);
H01L29/2003 (EP,KR,US);
H01L29/205 (US);
H01L29/42376 (EP,KR,US);
H01L29/66462 (EP,KR,US);
|
| Former IPC [2017/25] | H01L29/778 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2017/25] | Title | German: | SELBSTAUSGERICHTETE GATE-LAST-III-N-TRANSISTOREN | [2017/25] | English: | SELF-ALIGNED GATE LAST III-N TRANSISTORS | [2017/25] | French: | TRANSISTORS À BASE DE MATÉRIAUX III-N À AUTO-ALIGNEMENT DE GRILLE EN DERNIER | [2017/25] | Entry into regional phase | 11.01.2017 | National basic fee paid | 11.01.2017 | Search fee paid | 11.01.2017 | Designation fee(s) paid | 11.01.2017 | Examination fee paid | Examination procedure | 11.01.2017 | Examination requested [2017/25] | 11.01.2017 | Date on which the examining division has become responsible | 28.09.2018 | Amendment by applicant (claims and/or description) | 08.07.2019 | Application withdrawn by applicant [2019/33] | Fees paid | Renewal fee | 11.01.2017 | Renewal fee patent year 03 | 14.08.2017 | Renewal fee patent year 04 | 10.08.2018 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US2006124962 (UEDA TETSUZO [JP], et al) [X] 1-3,6,7 * figures 5, 7 and associated text * [I] 4,5,8,13-15; | [XI] - K SHINOHARA ET AL, "220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic", 2012 INTERNATIONAL ELECTRON DEVICES MEETING, (2010), doi:10.1109/IEDM.2010.5703448, ISSN 0163-1918, ISBN 978-1-4673-4870-6, pages 30.1.1 - 30.1.4, XP055445718 [X] 1-3,6,7 * figure 1 * [I] 4,5,8,13-15 DOI: http://dx.doi.org/10.1109/IEDM.2010.5703448 | [XI] - ANCONA M G, "Fully coupled thermoelectroelastic simulations of GaN devices", 2012 INTERNATIONAL ELECTRON DEVICES MEETING (IEDM 2012) : SAN FRANCISCO, CALIFORNIA, USA, 10 - 13 DECEMBER 2012, IEEE, PISCATAWAY, NJ, (20121210), doi:10.1109/IEDM.2012.6479037, ISBN 978-1-4673-4872-0, pages 13.5.1 - 13.5.4, XP032341729 [X] 1,2,4,6,7 * figure 1b * [I] 3,8,13-15 DOI: http://dx.doi.org/10.1109/IEDM.2012.6479037 | International search | [A]US7259049 (CHAN KEVIN K [US], et al) [A] 1-25 * See column 4, lines 39-67 and figure 1. *; | [A]US2007293015 (BEACH ROBERT [US], et al) [A] 1-25 * See paragraphs [0019]-[0025] and figure 1. *; | [A]US2010330754 (HEBERT FRANCOIS [US]) [A] 1-25* See paragraphs [0012]-[0021] and figures 1-13. *; | [Y]EP1726043 (POWER INTEGRATIONS INC [US]) [Y] 1-25 * See paragraphs [0021]-[0027], claim 9 and figures 2A-3. *; | [Y]US2013320350 (HAEBERLEN OLIVER [AT], et al) [Y] 1-25 * See paragraphs [0017]-[0022] and figure 1. * |