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Extract from the Register of European Patents

EP About this file: EP2963674

EP2963674 - METHOD FOR PRODUCING A MICROELECTRONIC DEVICE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  31.05.2024
Database last updated on 30.09.2024
FormerThe patent has been granted
Status updated on  23.06.2023
FormerGrant of patent is intended
Status updated on  15.03.2023
FormerExamination is in progress
Status updated on  23.12.2016
Most recent event   Tooltip02.08.2024Lapse of the patent in a contracting state
New state(s): SI
published on 04.09.2024  [2024/36]
Applicant(s)For all designated states
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
Bâtiment "Le Ponant D"
25, Rue Leblanc
75015 Paris / FR
[N/P]
Former [2023/30]For all designated states
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
Bâtiment "Le Ponant D"
25, rue Leblanc
75015 Paris / FR
Former [2016/01]For all designated states
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Bâtiment "Le Ponant D" 25, rue Leblanc
75015 Paris / FR
Inventor(s)01 / AUGENDRE, Emmanuel
79 allée des Martagons
38330 Montbonnot / FR
02 / BARON, Thierry
20 rue du Charmant Som
38120 Saint-Egrève / FR
 [2023/30]
Former [2016/01]01 / AUGENDRE, Emmanuel
79 allée des Martagons
38330 MONTBONNOT / FR
02 / BARON, Thierry
20 rue du Charmant Som
38120 SAINT-EGREVE / FR
Representative(s)Hautier IP
20, rue de la Liberté
06000 Nice / FR
[2023/30]
Former [2016/01]Hautier, Nicolas
Cabinet Hautier 20, rue de la Liberté
06000 Nice / FR
Application number, filing date15174396.029.06.2015
[2016/01]
Priority number, dateFR2014005620130.06.2014         Original published format: FR 1456201
[2016/01]
Filing languageFR
Procedural languageFR
PublicationType: A1 Application with search report 
No.:EP2963674
Date:06.01.2016
Language:FR
[2016/01]
Type: B1 Patent specification 
No.:EP2963674
Date:26.07.2023
Language:FR
[2023/30]
Search report(s)(Supplementary) European search report - dispatched on:EP09.11.2015
ClassificationIPC:H01L21/20, H01L29/78, H01L29/66
[2023/14]
CPC:
H01L21/02381 (EP,US); H01L29/1054 (US); H01L21/0245 (EP,US);
H01L21/02452 (EP,US); H01L21/02458 (EP,US); H01L21/02463 (EP,US);
H01L21/02532 (EP,US); H01L21/02535 (EP,US); H01L21/0254 (EP,US);
H01L21/02546 (EP,US); H01L21/02598 (US); H01L21/02636 (US);
H01L21/02639 (EP,US); H01L21/30604 (US); H01L21/30612 (US);
H01L21/3081 (US); H01L21/31 (US); H01L21/31116 (US);
H01L21/324 (US); H01L21/3245 (US); H01L21/823431 (US);
H01L29/04 (US); H01L29/165 (US); H01L29/2003 (US);
H01L29/205 (US); H01L29/66795 (EP,US); H01L29/7849 (US);
H01L29/785 (EP,US) (-)
Former IPC [2023/13]H01L21/20, // H01L29/66
Former IPC [2016/01]H01L21/02, // H01L29/66
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/33]
Former [2016/01]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:HERSTELLUNGSVERFAHREN EINER MIKROELEKTRONISCHEN VORRICHTUNG[2016/01]
English:METHOD FOR PRODUCING A MICROELECTRONIC DEVICE[2016/01]
French:PROCÉDÉ DE RÉALISATION D'UN DISPOSITIF MICROÉLECTRONIQUE[2016/01]
Examination procedure06.07.2016Amendment by applicant (claims and/or description)
06.07.2016Examination requested  [2016/33]
02.01.2017Despatch of a communication from the examining division (Time limit: M06)
08.08.2017Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
10.10.2017Reply to a communication from the examining division
24.02.2020Despatch of a communication from the examining division (Time limit: M06)
07.09.2020Reply to a communication from the examining division
25.02.2022Despatch of a communication from the examining division (Time limit: M06)
29.07.2022Reply to a communication from the examining division
16.03.2023Communication of intention to grant the patent
16.06.2023Fee for grant paid
16.06.2023Fee for publishing/printing paid
16.06.2023Receipt of the translation of the claim(s)
Opposition(s)29.04.2024No opposition filed within time limit [2024/27]
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
10.10.2017Request for further processing filed
10.10.2017Full payment received (date of receipt of payment)
Request granted
25.10.2017Decision despatched
Fees paidRenewal fee
27.06.2017Renewal fee patent year 03
28.05.2018Renewal fee patent year 04
27.05.2019Renewal fee patent year 05
22.05.2020Renewal fee patent year 06
28.05.2021Renewal fee patent year 07
24.06.2022Renewal fee patent year 08
20.06.2023Renewal fee patent year 09
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Lapses during opposition  TooltipAT26.07.2023
CZ26.07.2023
DK26.07.2023
EE26.07.2023
ES26.07.2023
FI26.07.2023
HR26.07.2023
IT26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RO26.07.2023
RS26.07.2023
SE26.07.2023
SI26.07.2023
SK26.07.2023
SM26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
[2024/36]
Former [2024/26]AT26.07.2023
CZ26.07.2023
DK26.07.2023
EE26.07.2023
ES26.07.2023
FI26.07.2023
HR26.07.2023
IT26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RO26.07.2023
RS26.07.2023
SE26.07.2023
SK26.07.2023
SM26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
Former [2024/23]AT26.07.2023
CZ26.07.2023
DK26.07.2023
EE26.07.2023
ES26.07.2023
FI26.07.2023
HR26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RO26.07.2023
RS26.07.2023
SE26.07.2023
SK26.07.2023
SM26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
Former [2024/22]AT26.07.2023
CZ26.07.2023
DK26.07.2023
FI26.07.2023
HR26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RO26.07.2023
RS26.07.2023
SE26.07.2023
SM26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
Former [2024/20]AT26.07.2023
FI26.07.2023
HR26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RS26.07.2023
SE26.07.2023
SM26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
Former [2024/10]AT26.07.2023
FI26.07.2023
HR26.07.2023
LT26.07.2023
LV26.07.2023
NL26.07.2023
PL26.07.2023
RS26.07.2023
SE26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
PT27.11.2023
Former [2024/09]AT26.07.2023
FI26.07.2023
LT26.07.2023
NL26.07.2023
SE26.07.2023
NO26.10.2023
GR27.10.2023
IS26.11.2023
Former [2024/08]LT26.07.2023
NL26.07.2023
NO26.10.2023
GR27.10.2023
Former [2024/05]NL26.07.2023
Documents cited:Search[YA]US5417180  (NAKAMURA TOMOFUMI [JP]) [Y] 1-14 * column 2, line 25 - column 3, line 29 * * figure 3 * [A] 15,16;
 [X]US2010025683  (CHENG ZHIYUAN [US]) [X] 16 * paragraph [0049] - paragraph [0054] ** figure 5 *;
 [YA]WO2010033813  (AMBERWAVE SYSTEM CORP, et al) [Y] 1-5,7-14 * page 2, line 30 - page 6, line 17 * * page 8, line 10 - line 24 * * page 9, line 23 - line 24 * * figures 2, 3 * [A] 15,16;
 [YA]US2011049568  (LOCHTEFELD ANTHONY J [US], et al) [Y] 1-11,13,14 * paragraph [0013] - paragraph [0035] * * paragraph [0051] - paragraph [0057] * * paragraph [0090] - paragraph [0093] * * figure 6 * [A] 15,16;
 [XA]US2013119347  (CHO YOUNG-JIN [KR], et al) [X] 16 * paragraph [0047] - paragraph [0056] * * figures 1-7 * [A] 1-15
ExaminationUS2013037869
 US2013256759
    - VAN DAL MARK J H ET AL, "Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, USA, vol. 61, no. 2, doi:10.1109/TED.2013.2295883, ISSN 0018-9383, (20140201), pages 430 - 436, (20140120), XP011537687

DOI:   http://dx.doi.org/10.1109/TED.2013.2295883
by applicant   - J.-S. PARK ET AL., APPLIED PHYSICS LETTER, (2007), vol. 90, page 052113
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.