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Extract from the Register of European Patents

EP About this file: EP3026694

EP3026694 - SIC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHODS [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  30.12.2018
Database last updated on 18.11.2024
FormerExamination is in progress
Status updated on  07.09.2018
Most recent event   Tooltip30.12.2018Withdrawal of applicationpublished on 30.01.2019  [2019/05]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
1-1, Shibaura 1-Chome Minato-Ku
Tokyo 105-8001 / JP
[2016/22]
Inventor(s)01 / NISHIO, Johji
c/o IP Div. Toshiba Corp. (K. K. TOSHIBA)
1-1, Shibaura 1-chome
Minato-ku
Tokyo 105-8001 / JP
02 / SHIMIZU, Tatsuo
c/o IP Div. Toshiba Corp. (K. K. TOSHIBA)
1-1, Shibaura 1-chome
Minato-ku
Tokyo 105-8001 / JP
03 / IIJIMA, Ryosuke
c/o IP Div. Toshiba Corp. (K. K. TOSHIBA)
1-1, Shibaura 1-chome
Minato-ku
Tokyo 105-8001 / JP
04 / OHASHI, Teruyuki
c/o IP Div. Toshiba Corp. (K. K. TOSHIBA)
1-1, Shibaura 1-chome
Minato-ku
Tokyo 105-8001 / JP
05 / TAKAO, Kazuto
c/o IP Div. Toshiba Corp. (K. K. TOSHIBA)
1-1, Shibaura 1-chome
Minato-ku
Tokyo 105-8001 / JP
06 / SHINOHE, Takashi
c/o Toshiba Research Consulting Corporation
1, Komukai Toshiba-cho
Saiwai-ku, Kawasaki
Kanagawa 212-8582 / JP
 [2016/22]
Representative(s)Moreland, David, et al
Marks & Clerk LLP The Beacon
176 St Vincent Street
Glasgow G2 5SG / GB
[N/P]
Former [2016/22]Moreland, David, et al
Marks & Clerk LLP
Aurora
120 Bothwell Street
Glasgow G2 7JS / GB
Application number, filing date15176154.109.07.2015
[2016/22]
Priority number, dateJP2014023933226.11.2014         Original published format: JP 2014239332
[2016/22]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3026694
Date:01.06.2016
Language:EN
[2016/22]
Search report(s)(Supplementary) European search report - dispatched on:EP23.03.2016
ClassificationIPC:H01L21/329, H01L29/861, H01L29/32, H01L29/24
[2016/22]
CPC:
H01L29/1608 (EP,US); H01L29/868 (US); H01L21/046 (US);
H01L29/32 (EP,US); H01L29/6606 (EP,US); H01L29/8611 (EP,US);
H01L29/66068 (EP,US); H01L29/7395 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/22]
Extension statesBANot yet paid
MENot yet paid
Validation statesMANot yet paid
TitleGerman:SIC HALBLEITERBAUELEMENT UND SEINE HERSTELLUNGSVERFAHREN[2016/22]
English:SIC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHODS[2016/22]
French:DISPOSITIF À SEMI-CONDUCTEURS EN SIC ET SES PROCÉDÉS DE FABRICATION[2016/22]
Examination procedure09.07.2015Examination requested  [2016/22]
01.12.2016Amendment by applicant (claims and/or description)
07.09.2018Despatch of a communication from the examining division (Time limit: M04)
20.12.2018Application withdrawn by applicant  [2019/05]
Fees paidRenewal fee
12.07.2017Renewal fee patent year 03
11.07.2018Renewal fee patent year 04
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Documents cited:Search[XA]EP1883102  (CENTRAL RES INST ELECT [JP]);
 [A]US2011018005  (NAKANO YUKI [JP]);
 [A]US2014070230  (O'LOUGHLIN MICHAEL JOHN [US], et al);
ExaminationUS2012223333
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.