EP3026694 - SIC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHODS [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 30.12.2018 Database last updated on 18.11.2024 | |
Former | Examination is in progress Status updated on 07.09.2018 | Most recent event Tooltip | 30.12.2018 | Withdrawal of application | published on 30.01.2019 [2019/05] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 1-1, Shibaura 1-Chome Minato-Ku Tokyo 105-8001 / JP | [2016/22] | Inventor(s) | 01 /
NISHIO, Johji c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 / JP | 02 /
SHIMIZU, Tatsuo c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 / JP | 03 /
IIJIMA, Ryosuke c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 / JP | 04 /
OHASHI, Teruyuki c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 / JP | 05 /
TAKAO, Kazuto c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 / JP | 06 /
SHINOHE, Takashi c/o Toshiba Research Consulting Corporation 1, Komukai Toshiba-cho Saiwai-ku, Kawasaki Kanagawa 212-8582 / JP | [2016/22] | Representative(s) | Moreland, David, et al Marks & Clerk LLP The Beacon 176 St Vincent Street Glasgow G2 5SG / GB | [N/P] |
Former [2016/22] | Moreland, David, et al Marks & Clerk LLP Aurora 120 Bothwell Street Glasgow G2 7JS / GB | Application number, filing date | 15176154.1 | 09.07.2015 | [2016/22] | Priority number, date | JP20140239332 | 26.11.2014 Original published format: JP 2014239332 | [2016/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3026694 | Date: | 01.06.2016 | Language: | EN | [2016/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.03.2016 | Classification | IPC: | H01L21/329, H01L29/861, H01L29/32, H01L29/24 | [2016/22] | CPC: |
H01L29/1608 (EP,US);
H01L29/868 (US);
H01L21/046 (US);
H01L29/32 (EP,US);
H01L29/6606 (EP,US);
H01L29/8611 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2016/22] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | MA | Not yet paid | Title | German: | SIC HALBLEITERBAUELEMENT UND SEINE HERSTELLUNGSVERFAHREN | [2016/22] | English: | SIC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHODS | [2016/22] | French: | DISPOSITIF À SEMI-CONDUCTEURS EN SIC ET SES PROCÉDÉS DE FABRICATION | [2016/22] | Examination procedure | 09.07.2015 | Examination requested [2016/22] | 01.12.2016 | Amendment by applicant (claims and/or description) | 07.09.2018 | Despatch of a communication from the examining division (Time limit: M04) | 20.12.2018 | Application withdrawn by applicant [2019/05] | Fees paid | Renewal fee | 12.07.2017 | Renewal fee patent year 03 | 11.07.2018 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP1883102 (CENTRAL RES INST ELECT [JP]); | [A]US2011018005 (NAKANO YUKI [JP]); | [A]US2014070230 (O'LOUGHLIN MICHAEL JOHN [US], et al); | Examination | US2012223333 |