Extract from the Register of European Patents

EP About this file: EP3010045

EP3010045 - SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING SAME [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  04.01.2019
Database last updated on 26.03.2026
FormerExamination is in progress
Status updated on  19.10.2018
Most recent event   Tooltip04.01.2019Withdrawal of applicationpublished on 06.02.2019  [2019/06]
Applicant(s)For all designated states
Hitachi, Ltd.
6-6 Marunouchi 1-chome
Chiyoda-ku
Tokyo 100-8280 / JP
For all designated states
Hitachi Power Semiconductor Device, Ltd.
2-2 Omika-cho 5-chome
Hitachi-shi, Ibaraki 319-1221 / JP
[2016/16]
Inventor(s)01 / HASEGAWA, Jiro
c/o Hitachi Power Semiconductor Device, Ltd.
2-2, Omika-cho 5-chome, Hitachi-shi
Ibaraki, 319-1221 / JP
02 / TOYOTA, Yoshiaki
c/o Hitachi, Ltd.
6-6, Marunouchi 1-chome, Chiyoda-ku
Tokyo, 100-8280 / JP
 [2016/16]
Representative(s)MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
Paul-Heyse-Straße 29
80336 München / DE
[N/P]
Former [2016/16]MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
Paul-Heyse-Strasse 29
80336 München / DE
Application number, filing date15189734.514.10.2015
[2016/16]
Priority number, dateJP2014020961814.10.2014         Original published format: JP 2014209618
[2016/16]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3010045
Date:20.04.2016
Language:EN
[2016/16]
Search report(s)(Supplementary) European search report - dispatched on:EP11.03.2016
ClassificationIPC:H01L29/861, H01L21/329, H01L29/06, H01L29/24
[2016/16]
CPC:
H10D62/105 (EP,US); H10P14/3408 (US); H10D62/106 (EP,US);
H10D62/112 (EP,US); H10D62/8325 (EP,US); H10D8/043 (EP);
H10D8/051 (US); H10D8/411 (EP,US); H10P14/6308 (US);
H10P14/6322 (US); H10P14/6334 (US); H10P14/69215 (US);
H10W74/147 (EP,US); H10W74/43 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/16]
Extension statesBANot yet paid
MENot yet paid
Validation statesMANot yet paid
TitleGerman:HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG DAVON[2016/16]
English:SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING SAME[2016/16]
French:DISPOSITIF SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION[2016/16]
Examination procedure15.01.2016Examination requested  [2016/16]
20.10.2016Amendment by applicant (claims and/or description)
17.10.2018Despatch of a communication from the examining division (Time limit: M04)
03.01.2019Application withdrawn by applicant  [2019/06]
Fees paidRenewal fee
02.11.2017Renewal fee patent year 03
31.10.2018Renewal fee patent year 04
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Documents cited:Search[XI] US2013149850  (WADA KEIJI et al.)
 [X] US2010163888  (SAGGIO MARIO GIUSEPPE et al.)
 [XI] EP1873839  (TOSHIBA KK et al.) [X] 1-4,6,7 * paragraphs [0035] - [0049]; figures 1-8 *[I] 5
 [X] US2011193101  (YANASE NAOKO et al.) [X] 1,5,7 * paragraphs [0035] - [0046] *
 [X] US2007001176  (WARD ALLAN III et al.) [X] 1-7 * paragraphs [0021] - [0031] *
by applicantJPH11330496
 JP2013042054
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