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EP3242329
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EP About this file: EP3242329
| EP3242329 - HIGH VOLTAGE P TYPE LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TUBE [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 14.08.2020 Database last updated on 24.08.2024 | |
| Former | Request for examination was made Status updated on 06.10.2017 | ||
| Former | The international publication has been made Status updated on 01.08.2017 | Most recent event Tooltip | 14.08.2020 | Withdrawal of application | published on 16.09.2020 [2020/38] | Applicant(s) | For all designated states CSMC Technologies Fab1 Co., Ltd. No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 / CN | [2017/45] | Inventor(s) | 01 /
ZHANG, Guangsheng No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 / CN | 02 /
ZHANG, Sen No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 / CN | 03 /
BIAN, Peng No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 / CN | 04 /
HU, Xiaolong No. 8 Xinzhou Road Wuxi New District Jiangsu 214028 / CN | [2017/45] | Representative(s) | Manitz Finsterwald Patent- und Rechtsanwaltspartnerschaft mbB Martin-Greif-Strasse 1 80336 München / DE | [N/P] |
| Former [2017/45] | Manitz Finsterwald Patentanwälte PartmbB Martin-Greif-Strasse 1 80336 München / DE | Application number, filing date | 15876629.5 | 16.09.2015 | [2017/45] | WO2015CN89807 | Priority number, date | CN20151003131 | 05.01.2015 Original published format: CN201510003131 | [2017/45] | Filing language | ZH | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2016110128 | Date: | 14.07.2016 | Language: | ZH | [2016/28] | Type: | A1 Application with search report | No.: | EP3242329 | Date: | 08.11.2017 | Language: | EN | [2017/45] | Search report(s) | International search report - published on: | CN | 14.07.2016 | (Supplementary) European search report - dispatched on: | EP | 23.07.2018 | Classification | IPC: | H01L29/78, H01L29/423, H01L27/088 | [2018/34] | CPC: |
H01L29/7817 (EP,US);
H01L29/7816 (KR,US);
H01L21/8238 (US);
H01L29/0649 (US);
H01L29/0865 (US);
H01L29/0882 (US);
H01L29/1079 (US);
H01L29/1095 (US);
H01L29/36 (US);
H01L29/423 (KR);
H01L29/4916 (US);
H01L29/517 (KR);
H01L29/66681 (US);
H01L29/7831 (EP,US);
H01L29/7835 (EP,US);
H01L21/823814 (EP,US);
H01L27/092 (US);
H01L27/0922 (EP,US);
|
| Former IPC [2017/45] | H01L29/78, H01L29/423 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2017/45] | Title | German: | METALLOXIDHALBLEITER-FELDEFFEKTROHR MIT SEITLICHER DOPPELDIFFUSION DES TYPS P UND HOCHSPANNUNG | [2017/45] | English: | HIGH VOLTAGE P TYPE LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TUBE | [2017/45] | French: | TUBE À EFFET DE CHAMP DE SEMI-CONDUCTEUR À OXYDE MÉTALLIQUE À DOUBLE DIFFUSION LATÉRALE DE TYPE P ET DE TENSION ÉLEVÉE | [2017/45] | Entry into regional phase | 01.08.2017 | Translation filed | 01.08.2017 | National basic fee paid | 01.08.2017 | Search fee paid | 01.08.2017 | Designation fee(s) paid | 01.08.2017 | Examination fee paid | Examination procedure | 01.08.2017 | Examination requested [2017/45] | 01.08.2017 | Date on which the examining division has become responsible | 01.03.2019 | Amendment by applicant (claims and/or description) | 06.08.2020 | Application withdrawn by applicant [2020/38] | Fees paid | Renewal fee | 01.08.2017 | Renewal fee patent year 03 | 25.09.2018 | Renewal fee patent year 04 | 24.09.2019 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]JPH08340101 (FUJI ELECTRIC CO LTD) [X] 1,2 * paragraphs [0018] , [0019]; figure 2 *[I] 3-15; | [XI]US5773852 (HAN MIN-KOO [KR], et al) [X] 1 * column 6, line 4 - column 8, line 35; figure 3 * [I] 4-15 | International search | [A]CN101752373 (SHANGHAI HUAHONG NEC ELECT CO) [A] 1-15 * , the whole document *; | [A]US2012074497 (GAO XIANG [CN]) [A] 1-15* , the whole document *; | [A]CN102790087 (UNIV ELECTRONIC SCIENCE & TECH) [A] 1-15 * , the whole document *; | [A]CN103258814 (UNIV ELECTRONIC SCIENCE & TECH) [A] 1-15 * , description, paragraphs [0027]-[0032], and figure 5 *; | [A]CN103441145 (WUXI CSMC TECH SEMICONDUCTOR) [A] 1-15 * , the whole document * |