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EP3276653

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Extract from the Register of European Patents

EP About this file: EP3276653

EP3276653 - SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
Status	Examination is in progress Status updated on 30.04.2021 Database last updated on 08.04.2026
Former	Request for examination was made Status updated on 29.12.2017
Former	The international publication has been made Status updated on 28.03.2017
Most recent event Tooltip	20.02.2026	New entry: Renewal fee paid
Applicant(s)	For all designated states Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP
	[2018/05]
Inventor(s)	01 / YOSHIDA, Yuta c/o Renesas Electronics Corporation 2-24 Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP
	02 / YABUUCHI, Makoto c/o Renesas Electronics Corporation 2-24 Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP
	03 / YOKOYAMA, Yoshisato c/o Renesas Electronics Corporation 2-24 Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP
	[2018/05]
Representative(s)	Mewburn Ellis LLP Aurora Building Counterslip Bristol BS1 6BX / GB
	[N/P]
Former [2018/05]	Addiss, John William, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB
Application number, filing date	15886418.1	26.03.2015
	[2018/05]
	WO2015JP59514
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2016151866
	Date:	29.09.2016
	Language:	JA
	[2016/39]
	Type:	A1 Application with search report
	No.:	EP3276653
	Date:	31.01.2018
	Language:	EN
	[2018/05]
Search report(s)	International search report - published on:	JP	29.09.2016
	(Supplementary) European search report - dispatched on:	EP	18.10.2018
Classification	IPC:	H01L21/8244, H01L27/11, G11C11/418, G11C11/419	[2018/47]
	CPC:	G11C11/418 (EP,KR,US); H10B10/12 (EP,KR,US); H10D89/10 (KR,US); G11C11/419 (EP,KR,US); H10B10/18 (EP,KR,US); H10D84/853 (KR,US); (+) H10W20/42 (US); H10W20/427 (US); H10D30/62 (EP,US) (-)
	Former IPC [2018/05]	H01L21/8244, H01L27/11
Designated contracting states	AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2018/05]
Title	German:	HALBLEITERBAUELEMENT	[2018/05]
	English:	SEMICONDUCTOR DEVICE	[2018/05]
	French:	DISPOSITIF À SEMI-CONDUCTEUR	[2018/05]
Entry into regional phase	28.03.2017	Translation filed
	28.03.2017	National basic fee paid
	28.03.2017	Search fee paid
	28.03.2017	Designation fee(s) paid
	28.03.2017	Examination fee paid
Examination procedure	28.03.2017	Examination requested [2018/05]
	28.03.2017	Date on which the examining division has become responsible
	14.05.2019	Amendment by applicant (claims and/or description)
	30.04.2021	Despatch of a communication from the examining division (Time limit: M06)
	05.11.2021	Reply to a communication from the examining division
Fees paid	Renewal fee
	28.03.2017	Renewal fee patent year 03
	27.03.2018	Renewal fee patent year 04
	25.03.2019	Renewal fee patent year 05
	27.03.2020	Renewal fee patent year 06
	29.03.2021	Renewal fee patent year 07
	25.03.2022	Renewal fee patent year 08
	23.03.2023	Renewal fee patent year 09
	26.03.2024	Renewal fee patent year 10
	25.03.2025	Renewal fee patent year 11
	19.02.2026	Renewal fee patent year 12
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[IY] US2013181297 (LIAW JHON-JHY et al.) [I] 1,7-12,14 * figures 1-3A *[Y] 2-6,13,15
		[A] US2013258759 (LIAW JHON-JHY et al.) [A] 1-15 * figures 7, 10 *
		[Y] JP2006310467 (RENESAS TECH CORP et al.) [Y] 2-6,15 * paragraph [0033]; figure 5 *
		[Y] US2008197419 (LIAW JHON-JHY et al.) [Y] 13 * the whole document *
	International search	[XY] JP2005203780 (SAMSUNG ELECTRONICS CO LTD et al.) [X] 1, 12, 14 * , paragraphs [0048] to [0123]; fig. 1 to 17 & US 2005/0151276 A1 & DE 102005001134 A1 & KR 10-2005-0073948 A & CN 1641882 A & TW 200527657 A *[Y] 2-11, 13, 15
		[Y] JP2006310467 (RENESAS TECH CORP et al.) [Y] 2-11, 13, 15 * , paragraphs [0020] to [0040]; fig. 2, 5 (Family: none) *
		[Y] WO2015019411 (RENESAS ELECTRONICS CORP et al.) [Y] 13 * , paragraphs [0073] to [0078]; fig. 3 (Family: none) *
		[A] WO2005119763 (NEC CORP et al.) [A] 1-15 * , paragraphs [0066] to [0108]; fig. 1 to 6 & JP 2012-94895 A & US 2008/0079077 A1 *

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