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Extract from the Register of European Patents

EP About this file: EP3311159

EP3311159 - CURRENT SENSORS USING BIPOLAR TRANSISTORS [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  28.04.2023
Database last updated on 19.10.2024
FormerGrant of patent is intended
Status updated on  01.08.2022
FormerExamination is in progress
Status updated on  07.08.2020
FormerRequest for examination was made
Status updated on  23.03.2018
FormerThe international publication has been made
Status updated on  23.12.2016
Most recent event   Tooltip28.04.2023Application deemed to be withdrawnpublished on 31.05.2023  [2023/22]
Applicant(s)For all designated states
Qualcomm Incorporated
International IP Administration
5775 Morehouse Drive
San Diego, CA 92121-1714 / US
[2018/17]
Inventor(s)01 / APARIN, Vladimir
5775 Morehouse Drive
San Diego, CA 92121-1714 / US
 [2018/17]
Representative(s)Carstens, Dirk Wilhelm
Wagner & Geyer Partnerschaft mbB
Patent- und Rechtsanwälte
Gewürzmühlstraße 5
80538 München / DE
[N/P]
Former [2018/17]Carstens, Dirk Wilhelm
Wagner & Geyer
Gewürzmühlstraße 5
80538 München / DE
Application number, filing date16733261.815.06.2016
[2018/17]
WO2016US37544
Priority number, dateUS201562181158P17.06.2015         Original published format: US 201562181158 P
US20161518159614.06.2016         Original published format: US201615181596
[2018/17]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2016205310
Date:22.12.2016
Language:EN
[2016/51]
Type: A1 Application with search report 
No.:EP3311159
Date:25.04.2018
Language:EN
The application published by WIPO in one of the EPO official languages on 22.12.2016 takes the place of the publication of the European patent application.
[2018/17]
Search report(s)International search report - published on:EP22.12.2016
ClassificationIPC:G01N33/487
[2018/17]
CPC:
G01N33/4836 (EP,US); G01N27/4148 (KR,US); G01N27/416 (US);
G01N21/27 (US); G01N27/3276 (US); G01N27/4145 (KR,US);
G01N27/4167 (KR,US); G01N33/48721 (EP,KR,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2018/17]
TitleGerman:STROMSENSOREN UNTER VERWENDUNG VON BIPOLAREN TRANSISTOREN[2018/17]
English:CURRENT SENSORS USING BIPOLAR TRANSISTORS[2018/17]
French:CAPTEURS DE COURANT UTILISANT DES TRANSISTORS BIPOLAIRES[2018/17]
Entry into regional phase25.10.2017National basic fee paid 
25.10.2017Designation fee(s) paid 
25.10.2017Examination fee paid 
Examination procedure11.04.2017Request for preliminary examination filed
International Preliminary Examining Authority: EP
25.10.2017Examination requested  [2018/17]
25.10.2017Date on which the examining division has become responsible
03.08.2018Amendment by applicant (claims and/or description)
06.08.2020Despatch of a communication from the examining division (Time limit: M04)
04.12.2020Reply to a communication from the examining division
02.08.2022Communication of intention to grant the patent
13.12.2022Application deemed to be withdrawn, date of legal effect  [2023/22]
11.01.2023Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2023/22]
Fees paidRenewal fee
16.04.2018Renewal fee patent year 03
10.06.2019Renewal fee patent year 04
31.03.2020Renewal fee patent year 05
08.06.2021Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
30.06.202207   M06   Not yet paid
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Cited inInternational search[X]US5111221  (FARE THOMAS L [US], et al) [X] 1-54 * column 4, line 52 - line 59 * * figure - *;
 [A]WO2010122293  (OXFORD NANOPORE TECHNOLOGIES L [GB], et al) [A] 1-54 * page 7, line 8 - page 10, line 33 * * figure 3 *;
 [A]WO2011067559  (OXFORD NANOPORE TECH LTD [GB], et al) [A] 1-54 * page 21, line 8 - page 22, line 22 * * figure - *;
 [A]US2012312083  (AKAHORI RENA [JP], et al) [A] 1-54 * paragraph [0049] * * figure 15 *;
 [A]WO2014066909  (UNIV CALIFORNIA [US]) [A] 1-54* the whole document *;
 [X]  - CHUNG-YUAN CHEN ET AL, "Extended base H+-ion sensitive bipolar junction transistor with SnO2/ITO glass sensing membrane", SENSORS, 2009 IEEE, IEEE, PISCATAWAY, NJ, USA, (20091025), ISBN 978-1-4244-4548-6, pages 1113 - 1116, XP031618979 [X] 1-54 * page 1113, column rh, paragraph 3 - paragraph 5 * * figures 2,3 *
 [A]  - LIANGLIANG CHEN ET AL, "High gain current readout method for MWCNT infrared sensor", 2012 12TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO 2012) : BIRMINGHAM, UNITED KINGDOM, 20 - 23 AUGUST 2012, IEEE, PISCATAWAY, NJ, (20120820), doi:10.1109/NANO.2012.6322158, ISBN 978-1-4673-2198-3, pages 1 - 4, XP032260314 [A] 1-54 * paragraph [II.B.] * * figure 3 *

DOI:   http://dx.doi.org/10.1109/NANO.2012.6322158
 [A]  - Anonymous, "Chapter 10: Multi stage amplifier configurations [Analog Devices Wiki]", (20130921), URL: https://wiki.analog.com/university/courses/electronics/text/chapter-10?rev=1379775557, (20160824), XP055297332 [A] 1-54 * the whole document *
 [A]  - Anonymous, "Chapter 11: The Current Mirror [Analog Devices Wiki]", (20140109), URL: https://wiki.analog.com/university/courses/electronics/text/chapter-11, (20160824), XP055297326 [A] 1-54 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.