Extract from the Register of European Patents

EP About this file: EP3361511

EP3361511 - LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  10.07.2020
Database last updated on 08.04.2026
FormerRequest for examination was made
Status updated on  13.07.2018
FormerThe international publication has been made
Status updated on  18.04.2017
Most recent event   Tooltip10.07.2020Application deemed to be withdrawnpublished on 12.08.2020  [2020/33]
Applicant(s)For all designated states
CSMC Technologies Fab2 Co., Ltd.
No.8 Xinzhou Road
Wuxi New District
Jiangsu 214028 / CN
[2018/33]
Inventor(s)01 / QI, Shukun
No.8 Xinzhou Road
Wuxi New District
Jiangsu 214028 / CN
02 / SUN, Guipeng
No.8 Xinzhou Road
Wuxi New District
Jiangsu 214028 / CN
 [2018/33]
Representative(s)Michalski Hüttermann & Partner Patentanwälte mbB
Kaistraße 16A
40221 Düsseldorf / DE
[N/P]
Former [2018/33]Michalski Hüttermann & Partner Patentanwälte mbB
Speditionstraße 21
40221 Düsseldorf / DE
Application number, filing date16853045.918.08.2016
[2018/33]
WO2016CN95902
Priority number, dateCN20151064716608.10.2015         Original published format: CN201510647166
[2018/33]
Filing languageZH
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2017059739
Date:13.04.2017
Language:ZH
[2017/15]
Type: A1 Application with search report 
No.:EP3361511
Date:15.08.2018
Language:EN
[2018/33]
Search report(s)International search report - published on:CN13.04.2017
(Supplementary) European search report - dispatched on:EP16.05.2019
ClassificationIPC:H01L29/78, H01L29/40, H01L29/06
[2019/25]
CPC:
H10D62/111 (EP,US); H10D30/60 (KR); H10D30/65 (CN,US);
H10D30/0321 (KR); H10D30/601 (US); H10D30/603 (EP,US);
H10D62/109 (CN,US); H10D62/158 (US); H10D64/112 (EP,US);
H10D64/117 (EP,CN,US); H10D64/691 (KR); H10D84/0156 (EP,KR);
H10D62/126 (US) (-)
Former IPC [2018/33]H01L29/78
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2018/33]
TitleGerman:LATERAL DIFFUNDIERTER METALLOXID-HALBLEITER-FELDEFFEKTTRANSISTOR[2018/33]
English:LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR[2018/33]
French:TRANSISTOR À EFFET DE CHAMP À SEMI-CONDUCTEUR À OXYDE MÉTALLIQUE ET DIFFUSION LATÉRALE[2018/33]
Entry into regional phase12.04.2018Translation filed 
12.04.2018National basic fee paid 
12.04.2018Search fee paid 
12.04.2018Designation fee(s) paid 
12.04.2018Examination fee paid 
Examination procedure12.04.2018Amendment by applicant (claims and/or description)
12.04.2018Examination requested  [2018/33]
12.04.2018Date on which the examining division has become responsible
17.12.2019Application deemed to be withdrawn, date of legal effect  [2020/33]
23.01.2020Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2020/33]
Fees paidRenewal fee
28.08.2018Renewal fee patent year 03
26.08.2019Renewal fee patent year 04
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Documents cited:Search[Y] US2012146140  (DARWISH MOHAMED N et al.) [Y] 1-9 * paragraphs [0029] - [0044]; figure 7 *
 [Y] US2008164506  (LEIBIGER STEVEN et al.) [Y] 1-9 * paragraphs [0033] - [0038]; figures 1-4 *
 [A] US2015041894  (HEBERT FRANCOIS et al.) [A] 2,6 * paragraphs [0052] - [0055] - [0 71]; figure 1D *
International search[A] CN103441145  (WUXI CSMC TECH SEMICONDUCTOR et al.) [A] 1-9 * , description, paragraphs [0084]-[0086], and figures 4-11 *
 [A] US2009294849  (MIN WON GI et al.) [A] 1-9 * , the whole document *
 [A] CN1632931  (SHANGHAI HUA HONG GROUP CO LTD et al.) [A] 1-9 * , the whole document *
 [A] CN102403350  (SHANGHAI HUAHONG NEC ELECT CO et al.) [A] 1-9 * , the whole document *
 [A] US2013069712  (TRAJKOVIC TANYA et al.) [A] 1-9 * , the whole document *
 [A] CN103515439  (FORCE MOS TECHNOLOGY CO LTD et al.) [A] 1-9 * , the whole document *
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