Extract from the Register of European Patents

EP Citations: EP3437137

Cited inSearch
Type:Patent literature
Publication No.:US8836016  [A]
 (WU CHENG-HSIEN [TW], et al) [A] 1-15* figure 6 *;
Type:Patent literature
Publication No.:US2014284726  [XI]
 (LEE YI-JING [TW], et al) [X] 1,2,7 * paragraph [0040]; figure 1 * [I] 3-6,8-15;
Type:Non-patent literature
Publication information:[A]  - WALDRON NIAMH ET AL, "Replacement fin processing for III-V on Si: From FinFets to nanowires", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, (20151023), vol. 115, doi:10.1016/J.SSE.2015.09.020, ISSN 0038-1101, pages 81 - 91, XP029309681 [A] 1-15 * figures 9, 10 *
DOI: http://dx.doi.org/10.1016/j.sse.2015.09.020
Cited inInternational search
Type:Patent literature
Publication No.:US2014302658  [A]
 (ADAM THOMAS N [US], et al) [A] 1-21 * See abstract, paragraphs [0041]-[0046] and figures 6A-7. *;
Type:Patent literature
Publication No.:US2015137266  [A]
 (HUANG YU-LIEN [TW], et al) [A] 1-21 * See abstract, paragraph [0030] and figure 5B. *;
Type:Patent literature
Publication No.:WO2015147858  [A]
 (INTEL CORP [US]) [A] 1-21 * See abstract, paragraphs [0080]-[0083] and figures 18A-19. *;
Type:Patent literature
Publication No.:KR20150116771  [A]
 (SAMSUNG ELECTRONICS CO LTD [KR], et al) [A] 1-21* See abstract, paragraphs [0049]-[0055] and figures 2a-3c. *;
Type:Patent literature
Publication No.:WO2016043769  [A]
 (INTEL CORP [US], et al) [A] 1-21 * See abstract, page 5, lines 6-20 and figure 7. *