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EP3288085
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EP About this file: EP3288085
| EP3288085 - SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 26.02.2021 Database last updated on 02.11.2024 | |
| Former | Examination is in progress Status updated on 20.06.2020 | ||
| Former | Request for examination was made Status updated on 10.08.2018 | ||
| Former | The application has been published Status updated on 26.01.2018 | Most recent event Tooltip | 26.02.2021 | Application deemed to be withdrawn | published on 31.03.2021 [2021/13] | Applicant(s) | For all designated states Semiconductor Manufacturing International (Shanghai) Corporation No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 / CN | For all designated states Semiconductor Manufacturing International (Beijing) Corporation No. 18, Wenchang Road Beijing Economic and Technological Development Area, Daxing Area Beijing 100176 / CN | [2018/45] |
| Former [2018/09] | For all designated states Semiconductor Manufacturing International Corporation (Shanghai) No. 18, Zhangjiang Road Pudong New Area Shanghai 201203 / CN | ||
| For all designated states Semiconductor Manufacturing International Corporation (Beijing) No. 18, Wenchang Road Beijing Economic and Technological Development Area, Daxing Area Beijing 100176 / CN | Inventor(s) | 01 /
ZHANG, Chenglong c/o Semiconductor Manufacturing International Corporation (Shanghai) Mrs. Qilan LONG No. 18, Zhangjiang Road, Pudong New Area Shanghai, 201203 / CN | 02 /
XIAO, Fangyuan c/o Semiconductor Manufacturing International Corporation (Shanghai) Mrs. Qilan LONG No. 18, Zhangjiang Road, Pudong New Area Shanghai, 201203 / CN | 03 /
WANG, Yan c/o Semiconductor Manufacturing International Corporation (Shanghai) Mrs. Qilan LONG No. 18, Zhangjiang Road, Pudong New Area Shanghai, 201203 / CN | [2018/09] | Representative(s) | Klunker IP Patentanwälte PartG mbB Destouchesstraße 68 80796 München / DE | [2018/09] | Application number, filing date | 17185681.8 | 10.08.2017 | [2018/09] | Priority number, date | CN201610711318 | 23.08.2016 Original published format: CN201610711318 | [2018/09] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3288085 | Date: | 28.02.2018 | Language: | EN | [2018/09] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.01.2018 | Classification | IPC: | H01L29/66 | [2018/09] | CPC: |
H01L29/66795 (EP,US);
H01L21/823431 (CN,US);
H01L21/823412 (US);
H01L21/823437 (US);
H01L21/823462 (US);
H01L21/823481 (CN);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2018/37] |
| Former [2018/09] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | MA | Not yet paid | MD | Not yet paid | Title | German: | HALBLEITERSTRUKTUR UND HERSTELLUNGSVERFAHREN DAFÜR | [2018/09] | English: | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF | [2018/09] | French: | STRUCTURE À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION | [2018/09] | Examination procedure | 10.08.2017 | Date on which the examining division has become responsible | 03.08.2018 | Amendment by applicant (claims and/or description) | 03.08.2018 | Examination requested [2018/37] | 24.06.2020 | Despatch of a communication from the examining division (Time limit: M04) | 05.11.2020 | Application deemed to be withdrawn, date of legal effect [2021/13] | 25.11.2020 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2021/13] | Fees paid | Renewal fee | 26.08.2019 | Renewal fee patent year 03 | 20.08.2020 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2012056263 (LEE DONG-KAK [KR], et al) [A] 14,15 * the whole document ** paragraph [0040] - paragraph [0044] *; | [XYI]US2014264572 (KIM SUNG-MIN [KR], et al) [X] 1,3-5,14,15 * figures 1-20 * [Y] 12,13 [I] 2,6-11; | [Y]US2014353763 (CHUNG JAE-YUP [KR], et al) [Y] 12,13 * paragraph [0075] - paragraph [0076] * * paragraph [0090] * * figures 6,11 *; | [A]US8916460 (KWON BYOUNG-HO [KR], et al) [A] 1-15 * figures 16-24 * |