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Extract from the Register of European Patents

EP About this file: EP3291284

EP3291284 - ALPHA-GA2O3 SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE COMPRISING THE SEMICONDUCTOR FILM, AND SEMICONDUCTOR SYSTEM COMPRISING THE SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
Former [2018/10]CRYSTALLINE OXIDE SEMICONDUCTOR FILM, CRYSTALLINE OXIDE SEMICONDUCTOR DEVICE, AND CRYSTALLINE OXIDE SEMICONDUCTOR SYSTEM
[2020/43]
StatusNo opposition filed within time limit
Status updated on  14.01.2022
Database last updated on 02.09.2024
FormerThe patent has been granted
Status updated on  05.02.2021
FormerGrant of patent is intended
Status updated on  06.10.2020
FormerExamination is in progress
Status updated on  30.03.2019
FormerRequest for examination was made
Status updated on  14.09.2018
FormerThe application has been published
Status updated on  02.02.2018
Most recent event   Tooltip27.04.2024Lapse of the patent in a contracting state
New state(s): MK
published on 29.05.2024  [2024/22]
Applicant(s)For all designated states
Flosfia Inc.
1-29, Goryoohara
Nishikyo-ku
Kyoto-shi
Kyoto 615-8245 / JP
[2019/31]
Former [2018/10]For all designated states
Flosfia Inc.
Kyodai Katsura Venture Plaza
North Building
1-36, Goryo ohara
Nishikyo-ku
Kyoto 615-8245 / JP
Inventor(s)01 / Tokuda, Rie
c/o Flosfia Inc.
1-36 Goryoohara, Nishikyo-ku, Kyoto-shi
Kyoto, 615-8245 / JP
02 / Oda, Masaya
c/o Flosfia Inc.
1-36 Goryoohara, Nishikyo-ku, Kyoto-shi
Kyoto, 615-8245 / JP
03 / Hitora, Toshimi
c/o Flosfia Inc.
1-36 Goryoohara, Nishikyo-ku, Kyoto-shi
Kyoto, 615-8245 / JP
 [2018/10]
Representative(s)Gulde & Partner
Patent- und Rechtsanwaltskanzlei mbB
Wallstraße 58/59
10179 Berlin / DE
[2018/10]
Application number, filing date17188724.331.08.2017
[2018/10]
Priority number, dateJP2016017040931.08.2016         Original published format: JP 2016170409
JP2016021766007.11.2016         Original published format: JP 2016217660
JP2017013744613.07.2017         Original published format: JP 2017137446
[2018/10]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3291284
Date:07.03.2018
Language:EN
[2018/10]
Type: B1 Patent specification 
No.:EP3291284
Date:10.03.2021
Language:EN
[2021/10]
Search report(s)(Supplementary) European search report - dispatched on:EP26.01.2018
ClassificationIPC:H01L21/36, H01L29/24, H01L29/04, H01L29/739, H01L29/778, H01L29/808, H01L29/872, H01L33/02
[2018/10]
CPC:
H01L29/24 (EP,US); H01L29/12 (CN); C23C16/40 (CN);
H01L21/02414 (EP,US); H01L21/0242 (EP,US); H01L21/02433 (EP,US);
H01L21/02483 (EP,US); H01L21/02565 (EP,US); H01L21/02576 (EP,US);
H01L21/02609 (EP,US); H01L21/02628 (EP,US); H01L21/02631 (EP,US);
H01L21/205 (CN); H01L29/045 (EP,US); H01L29/66969 (EP,US);
H01L29/7395 (EP,US); H01L29/7787 (EP,US); H01L29/7813 (US);
H01L29/7828 (EP,US); H01L29/8083 (EP,US); H01L29/872 (EP,US);
H01L33/42 (EP,US); H01L29/7802 (EP,US); H01L33/32 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2018/42]
Former [2018/10]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:ALPHA-GA2O3 HALBLEITERSCHICHT, HALBLEITERBAUELEMENT MIT DER ALPHA-GA2O3 HALBLEITERSCHICHT, UND HALBLEITERSYSTEM MIT DEM HALBLEITERBAUELEMENT[2020/43]
English:ALPHA-GA2O3 SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE COMPRISING THE SEMICONDUCTOR FILM, AND SEMICONDUCTOR SYSTEM COMPRISING THE SEMICONDUCTOR DEVICE[2020/43]
French:FILM SEMI-CONDUCTEUR À ALPHA-GA2O3, DISPOSITIF SEMI-CONDUCTEUR COMPRENANT CE FILM ET SYSTÈME SEMI-CONDUCTEUR COMPRENANT CE DISPOSITIF[2020/43]
Former [2018/10]KRISTALLINE OXIDHALBLEITERSCHICHT, KRISTALLINES OXIDHALBLEITERBAUELEMENT UND KRISTALLINES OXIDHALBLEITERSYSTEM
Former [2018/10]CRYSTALLINE OXIDE SEMICONDUCTOR FILM, CRYSTALLINE OXIDE SEMICONDUCTOR DEVICE, AND CRYSTALLINE OXIDE SEMICONDUCTOR SYSTEM
Former [2018/10]FILM SEMI-CONDUCTEUR À OXYDE CRISTALLIN, DISPOSITIF SEMI-CONDUCTEUR À OXYDE CRISTALLIN ET SYSTÈME SEMI-CONDUCTEUR À OXYDE CRISTALLIN
Examination procedure31.08.2017Date on which the examining division has become responsible
07.09.2018Amendment by applicant (claims and/or description)
07.09.2018Examination requested  [2018/42]
03.04.2019Despatch of a communication from the examining division (Time limit: M06)
10.10.2019Reply to a communication from the examining division
07.09.2020Cancellation of oral proceeding that was planned for 08.09.2020
08.09.2020Date of oral proceedings (cancelled)
07.10.2020Communication of intention to grant the patent
28.01.2021Fee for grant paid
28.01.2021Fee for publishing/printing paid
28.01.2021Receipt of the translation of the claim(s)
Opposition(s)13.12.2021No opposition filed within time limit [2022/07]
Fees paidRenewal fee
28.08.2019Renewal fee patent year 03
31.07.2020Renewal fee patent year 04
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See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU31.08.2017
AL10.03.2021
AT10.03.2021
CY10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
MK10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
BE31.08.2021
CH31.08.2021
IE31.08.2021
LI31.08.2021
LU31.08.2021
[2024/22]
Former [2023/30]HU31.08.2017
AL10.03.2021
AT10.03.2021
CY10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
BE31.08.2021
CH31.08.2021
IE31.08.2021
LI31.08.2021
LU31.08.2021
Former [2023/29]HU31.08.2017
AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
BE31.08.2021
CH31.08.2021
IE31.08.2021
LI31.08.2021
LU31.08.2021
Former [2022/35]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
BE31.08.2021
CH31.08.2021
IE31.08.2021
LI31.08.2021
LU31.08.2021
Former [2022/34]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
BE31.08.2021
CH31.08.2021
LI31.08.2021
LU31.08.2021
Former [2022/23]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
CH31.08.2021
LI31.08.2021
LU31.08.2021
Former [2022/21]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
PT12.07.2021
CH31.08.2021
LI31.08.2021
Former [2022/18]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
MC10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
PT12.07.2021
Former [2022/13]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SI10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
PT12.07.2021
Former [2022/10]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
PT12.07.2021
Former [2022/08]AL10.03.2021
AT10.03.2021
CZ10.03.2021
DK10.03.2021
EE10.03.2021
ES10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
Former [2022/07]AL10.03.2021
AT10.03.2021
CZ10.03.2021
EE10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
Former [2021/52]AT10.03.2021
CZ10.03.2021
EE10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
PL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
Former [2021/51]AT10.03.2021
CZ10.03.2021
EE10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
IS10.07.2021
PT12.07.2021
Former [2021/50]AT10.03.2021
CZ10.03.2021
EE10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
RO10.03.2021
RS10.03.2021
SK10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
PT12.07.2021
Former [2021/48]AT10.03.2021
CZ10.03.2021
EE10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
RS10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
Former [2021/46]AT10.03.2021
FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
RS10.03.2021
SM10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
Former [2021/43]FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
NL10.03.2021
RS10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
Former [2021/37]FI10.03.2021
HR10.03.2021
LT10.03.2021
LV10.03.2021
RS10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
Former [2021/36]FI10.03.2021
HR10.03.2021
LT10.03.2021
BG10.06.2021
NO10.06.2021
GR11.06.2021
Former [2021/35]FI10.03.2021
HR10.03.2021
LT10.03.2021
NO10.06.2021
Former [2021/33]FI10.03.2021
LT10.03.2021
NO10.06.2021
Documents cited:Search[I]WO2016035696  (FLOSFIA INC [JP]) [I] 1-15 * the whole document *;
 [IP]EP3190608  (FLOSFIA INC [JP]) [IP] 1-15 * paragraphs [0019] - [0025] - [0077]; figure 10 *;
 [A]  - Shizuo Fujita ET AL, Jpn. J. Appl. Phys, (20120101), page 100207, URL: http://iopscience.iop.org/article/10.1143/JJAP.51.100207/pdf, XP055380787 [A] 1-15 * the whole document *
 [A]  - Kazuaki Akaiwa ET AL, "Electrical Conductive Corundum-Structured [alpha]-Ga 2 O 3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition Electrical Conductive Corundum-Structured -Ga 2 O 3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition", Japanese Journal of Applied Physics, (20120614), URL: http://iopscience.iop.org/1347-4065/51/7R/070203/pdf/1347-4065_51_7R_070203.pdf, (20150722), XP055204013 [A] 1-15 * the whole document *

DOI:   http://dx.doi.org/10.1143/jjap.51.070203
Examination   - Masaya Oda ET AL, "Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 m[Omega].cm 2 grown by MIST EPITAXY  ", Applied Physics Express, JP, (20160122), vol. 9, no. 2, doi:10.7567/APEX.9.021101, ISSN 1882-0778, page 021101, XP055727827

DOI:   http://dx.doi.org/10.7567/APEX.9.021101
    - Kentaro Kaneko ET AL, "Growth and metal-oxide-semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors", Applied Physics Express, JP, (20150901), vol. 8, no. 9, doi:10.7567/APEX.8.095503, ISSN 1882-0778, page 095503, XP055727822

DOI:   http://dx.doi.org/10.7567/APEX.8.095503
by applicantJP2013028480
 JP2015228495
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.