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Extract from the Register of European Patents

EP About this file: EP3440690

EP3440690 - ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.06.2022
Database last updated on 09.04.2026
FormerThe patent has been granted
Status updated on  09.07.2021
FormerGrant of patent is intended
Status updated on  21.02.2021
FormerRequest for examination was made
Status updated on  11.01.2019
FormerThe international publication has been made
Status updated on  13.10.2017
Formerunknown
Status updated on  25.04.2017
Most recent event   Tooltip13.09.2024Lapse of the patent in a contracting state
New state(s): MT		published on 16.10.2024  [2024/42]
Applicant(s)For all designated states
mi2-factory GmbH
Moritz-von-Rohr-Str. 1a
07745 Jena / DE
[2021/32]
Former [2019/07]For all designated states
MI2-Factory GmbH
Moritz-von-Rohr-Str. 1a
07745 Jena / DE
Inventor(s)01 / KRIPPENDORF, Florian
Neugasse 6
07743 Jena / DE
02 / CSATO, Constantin
Grundlitz 12
95236 Stammbach / DE
 [2019/07]
Representative(s)Wächter, Jochen, et al
Kroher-Strobel
Rechts- und Patentanwälte PartmbB
Bavariaring 20
80336 München / DE
[2019/07]
Application number, filing date17717106.304.04.2017
[2019/07]
WO2017EP58018
Priority number, dateDE20161010611904.04.2016         Original published format: DE102016106119
[2019/07]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2017174597
Date:12.10.2017
Language:DE
[2017/41]
Type: A1 Application with search report 
No.:EP3440690
Date:13.02.2019
Language:DE
The application published by WIPO in one of the EPO official languages on 12.10.2017 takes the place of the publication of the European patent application.
[2019/07]
Type: B1 Patent specification 
No.:EP3440690
Date:11.08.2021
Language:DE
[2021/32]
Search report(s)International search report - published on:EP12.10.2017
ClassificationIPC:H01J37/317
[2019/07]
CPC:
H01J37/3171 (EP,CN,US); H01J37/05 (US); G21K1/025 (EP);
G21K1/10 (EP); H01J37/1472 (US); H01J37/3002 (CN);
H01J37/317 (US); H01J37/3172 (US); H01J2237/002 (US);
H01J2237/047 (EP,US); H01J2237/0475 (EP); H01J2237/057 (US);
H01J2237/31705 (US); H01J2237/3171 (EP,US); H01J2237/31711 (EP) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/07]
Extension statesBANot yet paid
MENot yet paid
Validation statesMANot yet paid
MDNot yet paid
TitleGerman:ENERGIEFILTERELEMENT FÜR IONENIMPLANTATIONSANLAGEN FÜR DEN EINSATZ IN DER PRODUKTION VON WAFERN[2019/07]
English:ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS[2019/07]
French:ÉLÉMENT DE FILTRE D'ÉNERGIE POUR INSTALLATIONS D'IMPLANTATION IONIQUE DESTINÉES À ÊTRE UTILISÉES DANS LA PRODUCTION DE TRANCHES[2019/07]
Entry into regional phase30.10.2018National basic fee paid 
30.10.2018Designation fee(s) paid 
30.10.2018Examination fee paid 
Examination procedure30.10.2018Examination requested  [2019/07]
30.10.2018Date on which the examining division has become responsible
21.05.2019Amendment by applicant (claims and/or description)
22.02.2021Communication of intention to grant the patent
02.07.2021Fee for grant paid
02.07.2021Fee for publishing/printing paid
02.07.2021Receipt of the translation of the claim(s)
Divisional application(s)EP21183792.7  / EP3926658
EP25163764.1  / EP4546375
EP25167441.2  / EP4553855
Opposition(s)12.05.2022No opposition filed within time limit [2022/29]
Fees paidRenewal fee
30.04.2019Renewal fee patent year 03
27.02.2020Renewal fee patent year 04
29.04.2021Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU04.04.2017
AL11.08.2021
CY11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
IT11.08.2021
LT11.08.2021
LV11.08.2021
MC11.08.2021
MK11.08.2021
MT11.08.2021
NL11.08.2021
PL11.08.2021
RO11.08.2021
RS11.08.2021
SE11.08.2021
SI11.08.2021
SK11.08.2021
SM11.08.2021
TR11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
[2024/42]
Former [2024/29]HU04.04.2017
AL11.08.2021
CY11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
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FI11.08.2021
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IT11.08.2021
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LV11.08.2021
MC11.08.2021
MK11.08.2021
NL11.08.2021
PL11.08.2021
RO11.08.2021
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SK11.08.2021
SM11.08.2021
TR11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
Former [2024/22]HU04.04.2017
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CY11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
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FI11.08.2021
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SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
Former [2024/20]HU04.04.2017
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CZ11.08.2021
DK11.08.2021
EE11.08.2021
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FI11.08.2021
HR11.08.2021
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MC11.08.2021
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PL11.08.2021
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RS11.08.2021
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SI11.08.2021
SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
Former [2024/18]HU04.04.2017
AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
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RO11.08.2021
RS11.08.2021
SE11.08.2021
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SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
Former [2023/20]AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
IT11.08.2021
LT11.08.2021
LV11.08.2021
MC11.08.2021
NL11.08.2021
PL11.08.2021
RO11.08.2021
RS11.08.2021
SE11.08.2021
SI11.08.2021
SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
IE04.04.2022
LU04.04.2022
BE30.04.2022
Former [2023/10]AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
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FI11.08.2021
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IT11.08.2021
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SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
LU04.04.2022
BE30.04.2022
Former [2023/08]AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
IT11.08.2021
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MC11.08.2021
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RO11.08.2021
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SE11.08.2021
SI11.08.2021
SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
LU04.04.2022
Former [2023/06]AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
IT11.08.2021
LT11.08.2021
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MC11.08.2021
NL11.08.2021
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RO11.08.2021
RS11.08.2021
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SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
Former [2022/36]AL11.08.2021
CZ11.08.2021
DK11.08.2021
EE11.08.2021
ES11.08.2021
FI11.08.2021
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IT11.08.2021
LT11.08.2021
LV11.08.2021
NL11.08.2021
PL11.08.2021
RO11.08.2021
RS11.08.2021
SE11.08.2021
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SK11.08.2021
SM11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
Former [2022/29]AL11.08.2021
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DK11.08.2021
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GR12.11.2021
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PT13.12.2021
Former [2022/25]CZ11.08.2021
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GR12.11.2021
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PT13.12.2021
Former [2022/24]CZ11.08.2021
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NL11.08.2021
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RO11.08.2021
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SE11.08.2021
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BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
Former [2022/21]DK11.08.2021
ES11.08.2021
FI11.08.2021
HR11.08.2021
LT11.08.2021
LV11.08.2021
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PL11.08.2021
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SE11.08.2021
BG11.11.2021
NO11.11.2021
GR12.11.2021
IS11.12.2021
PT13.12.2021
Former [2022/16]ES11.08.2021
FI11.08.2021
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Former [2022/09]ES11.08.2021
FI11.08.2021
LT11.08.2021
RS11.08.2021
SE11.08.2021
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Cited inInternational search[X] DE102005061663  (UNIV RUHR BOCHUM et al.)
 [X] DE102011075350  (FACHHOCHSCHULE JENA et al.)
 [Y] EP0014516  (WESTINGHOUSE ELECTRIC CORP et al.)
 [Y] US5972728  (CHEN MING CHUN et al.)
 [XAY]   VDI-GESELLSCHAFT MIKROELEKTRONIK, MIKROSYSTEMTECHNIK UND FEINWERKTECHNIK (HRSG.): "Mikrosystemtechnik Kongress 2015 "MEMS, Mikroelektronik, Systeme" 26.-28. Oktober 2015 Karlsruhe", 26 October 2015, VDE VERLAG, Berlin - Offenbach, ISBN: 978-3-8007-4100-7, article KRIPPENDORF F. ET AL.: "Dotierung von SiC mittels Energiefilter fr Ioninmplantation/Doping of SiC by means of Energy Filter for Ion Implantation", pages: 334 - 337, XP009194563
 [XAY]   ANONYMOUS: "buchhandel.de", 2 June 2017 (2017-06-02), XP055378536, Retrieved from the Internet [retrieved on 20170602]
 [X]   KRIPPENDORF F ET AL: "Energiefilter fuer Ionenimplantation / Energy filter for ion implantation", VON BAUELEMENTEN ZU SYSTEMEN : MIKROSYSTEMTECHNIK KONGRESS 2013, 14. - 16. OKTOBER 2013 IN AACHEN : PROCEEDINGS, VDE-VERL, BERLIN [U.A.], 14 October 2013 (2013-10-14), pages 662 - 665, XP009194724, ISBN: 978-3-8007-3555-6
 [X]   CSATO CONSTANTIN ET AL: "Energy filter for tailoring depth profiles in semiconductor doping application", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 365, 31 July 2015 (2015-07-31), pages 182 - 186, XP029313812, ISSN: 0168-583X, DOI: 10.1016/J.NIMB.2015.07.102

DOI:   http://dx.doi.org/10.1016/j.nimb.2015.07.102
 [Y]   RUB M ET AL: "550 V superjunction 3.9 /spl Omega/mm<2> transistor formed by 25 MeV masked boron implantation", POWER SEMICONDUCTOR DEVICES AND ICS, 2004. PROCEEDINGS. ISPSD '04. THE 16TH INTERNATIONAL SYMPOSIUM ON KITAKYUSHU INT. CONF. CTR, JAPAN MAY 24-27, 2004, PISCATAWAY, NJ, USA,IEEE, 24 May 2004 (2004-05-24), pages 455 - 458, XP010723449, ISBN: 978-4-88686-060-6
Examination  CSATO CONSTANTIN ET AL: "Energy filter for tailoring depth profiles in semiconductor doping application", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 365, 31 July 2011 (2011-07-31), pages 182 - 186, XP029313812, ISSN: 0168-583X, DOI: 10.1016/J.NIMB.2015.07.102 [X] 1-3,11

DOI:   http://dx.doi.org/10.1016/j.nimb.2015.07.102
by applicantEP0630037
 DE102011075350
 DE19652463
 US7385209
 US2002050573
 DE10239312
   MATERIALS SCIENCE-POLAND, vol. 24, no. 4, 2006
   M.RB, ENERGIEFILTER FR IONENIMPLANTATIONSANLAGEN, 2013
   CONSTANTIN CSATO; FLORIAN KRIPPENDORF; SHAVKAT AKHMADALIEV; JOHANNES VON BORANY; WEIQI HAN; THOMAS SIEFKE; ANDRE ZOWALLA; MICHAEL: "Energy filter for tailoring depth profiles in semiconductor doping application", NUCL. INSTR. METH. B, 2015, Retrieved from the Internet
   KRIPPENDORF; CSATO; RB, INVESTIGATION OF DOPANT PROFILES, LOSSES AND HEATING USING AN ENERGY FILTER FOR ION IMPLANTATION, March 2014 (2014-03-01)
   F. KRIPPENDORF; C. CSATO; T. BISCHOF; S. GUPTA; W. HAN; M. NOBST; C. RONNING; R. RUPP; A. SCHEWIOR; W. WESCH: "Energiefilter fr Ionenimplantation", MIKROSYSTEMTECHNIK KONGRESS, October 2014 (2014-10-01)
   CSATO, T. BISCHOF; S. GUPTA; W. HAN; F. KRIPPENDORF; W.MORGENROTH; M. NOBST; C. RONNING; R. RUPP; A. SCHEWIOR; W. WESCH, LONENSTRAHLEN - FORSCHUNG UND ANWENDUNG, 12 June 2013 (2013-06-12)
   M.RB; B.SC.; T. BISCHOF; M.SC. C. CSATO; B.SC. S. GUPTA; B.SC. W. HAN; M.SC. F. KRIPPENDORF; B.SC. A. SCHEWIOR; B.SC. C. MSE, ENERGIEFILTER FR IONENIMPLANTATIONSANLAGEN, 2011
   RB, ENERGIEFILTER FR HOCHENERGIEIONENIMPLANTATION, 23 July 2003 (2003-07-23), pages 9
   J.MEIJER; B. BURCHARD: "High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes", J.VAC. SCI. TECHNOL., vol. B22, no. L
   U.WEBER; G. KRAFT: "Design and construction fo a ripple filter for smoothed depth does distribution in conformal particle therapy", PHYS. MED. BIOL., vol. 44, 1999, pages 2765 - 2775, XP002530392, DOI: doi:10.1088/0031-9155/44/11/306

DOI:   http://dx.doi.org/10.1088/0031-9155/44/11/306
   Y.TAKADA ET AL.: "A mininature ripple filter for filtering a ripple found in disatal part of a proton SOBP", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A, vol. 524, 2004, pages 366 - 373
   M. NASTASI ET AL.: "Ion-Solid Interactions: Fundamentals and Applications", 1996, CAMBRIDGE UNIVERSITY PRESS
   O. OSMAN: "Irradiation effects of swift heavy ions in matter", DISSERTATION, 2011
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.