Extract from the Register of European Patents

EP About this file: EP3596756

EP3596756 - METHOD OF MANUFACTURING A PLURALITY OF CRYSTALLINE SEMICONDUCTOR ISLANDS OF VARYING LATTICE CONSTANT [Right-click to bookmark this link]
Former [2020/04]GROWTH SUBSTRATE FOR FORMING OPTOELECTRONIC DEVICES, METHOD FOR PRODUCING SUCH A SUBSTRATE AND USE OF THE SUBSTRATE, IN PARTICULAR IN THE FIELD OF MICRO-DISPLAYS
[2022/32]
StatusNo opposition filed within time limit
Status updated on  22.12.2023
Database last updated on 28.03.2026
FormerThe patent has been granted
Status updated on  13.01.2023
FormerGrant of patent is intended
Status updated on  17.10.2022
FormerExamination is in progress
Status updated on  10.12.2021
FormerRequest for examination was made
Status updated on  20.12.2019
FormerThe international publication has been made
Status updated on  22.09.2018
Formerunknown
Status updated on  11.04.2018
Most recent event   Tooltip19.12.2025Lapse of the patent in a contracting state
New state(s): TR
published on 21.01.2026  [2026/04]
Applicant(s)For all designated states
Soitec
Parc Technologique des Fontaines
Chemin des Franques
38190 Bernin / FR
[2020/04]
Inventor(s)01 / SOTTA, David
19 rue Louis et Auguste Lumière
38100 Grenoble / FR
02 / LEDOUX, Olivier
11 rue Masséna
38100 Grenoble / FR
03 / BONNIN, Olivier
4 rue du Fiaret
38320 Bresson / FR
04 / BETHOUX, Jean-Marc
672 Route du Gros Bois
38500 La Buisse / FR
05 / LOGIOU, Morgane
248 rue Maurice Carême
38920 Crolles / FR
06 / CAULMILONE, Raphaël
La Reina
Route des 3 villages
38660 Saint Pancrasse / FR
 [2020/04]
Representative(s)IP Trust
2, rue de Clichy
75009 Paris / FR
[2020/04]
Application number, filing date18714309.414.03.2018
[2020/04]
WO2018FR50606
Priority number, dateFR2017005223017.03.2017         Original published format: FR 1752230
FR2018005215513.03.2018         Original published format: FR 1852155
FR2018005215613.03.2018         Original published format: FR 1852156
[2020/04]
Filing languageFR
Procedural languageFR
PublicationType: A2 Application without search report
No.:WO2018167426
Date:20.09.2018
Language:FR
[2018/38]
Type: A2 Application without search report 
No.:EP3596756
Date:22.01.2020
Language:FR
The application published by WIPO in one of the EPO official languages on 20.09.2018 takes the place of the publication of the European patent application.
[2020/04]
Type: B1 Patent specification 
No.:EP3596756
Date:15.02.2023
Language:FR
[2023/07]
Search report(s)International search report - published on:EP22.11.2018
ClassificationIPC:H01L25/075, H01L21/02, H01L33/00, H01L33/02
[2020/04]
CPC:
H10W90/00 (EP,KR); H10H20/01335 (US); H10H20/018 (EP,KR);
H10H20/817 (KR); H10H20/819 (KR); H10H20/8215 (EP,KR);
H10W10/011 (KR) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/04]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER MEHRZAHL VON KRISTALLINEN HALBLEITERINSELN MIT VARIIERENDER GITTERKONSTANTE[2022/32]
English:METHOD OF MANUFACTURING A PLURALITY OF CRYSTALLINE SEMICONDUCTOR ISLANDS OF VARYING LATTICE CONSTANT[2022/32]
French:PROCÉDÉ DE FABRICATION D'UNE PLURALITÉ D'ÎLOTS SEMI-CONDUCTEURS CRISTALLINS PRÉSENTANT UNE VARIÉTÉ DE PARAMÈTRES DE MAILLE[2022/32]
Former [2020/04]WACHSTUMSSUBSTRAT ZUR BILDUNG OPTOELEKTRONISCHER VORRICHTUNGEN, VERFAHREN ZUR HERSTELLUNG SOLCH EINES SUBSTRATS UND VERWENDUNG DES SUBSTRATS, INSBESONDERE IM BEREICH DER MIKRODISPLAYS
Former [2020/04]GROWTH SUBSTRATE FOR FORMING OPTOELECTRONIC DEVICES, METHOD FOR PRODUCING SUCH A SUBSTRATE AND USE OF THE SUBSTRATE, IN PARTICULAR IN THE FIELD OF MICRO-DISPLAYS
Former [2020/04]SUBSTRAT DE CROISSANCE POUR LA FORMATION DE DISPOSITIFS OPTOELECTRONIQUES, PROCEDE DE FABRICATION D'UN TEL SUBSTRAT, ET UTILISATION DU SUBSTRAT NOTAMMENT DANS LE DOMAINE DES MICRO-ECRANS D'AFFICHAGE
Entry into regional phase28.08.2019National basic fee paid 
28.08.2019Designation fee(s) paid 
28.08.2019Examination fee paid 
Examination procedure28.08.2019Amendment by applicant (claims and/or description)
28.08.2019Examination requested  [2020/04]
28.08.2019Date on which the examining division has become responsible
14.12.2021Despatch of a communication from the examining division (Time limit: M04)
14.03.2022Reply to a communication from the examining division
18.10.2022Communication of intention to grant the patent
28.12.2022Receipt of the translation of the claim(s)
29.12.2022Fee for grant paid
29.12.2022Fee for publishing/printing paid
Divisional application(s)EP22161925.7  / EP4033531
Opposition(s)16.11.2023No opposition filed within time limit [2024/04]
Fees paidRenewal fee
20.03.2020Renewal fee patent year 03
12.03.2021Renewal fee patent year 04
16.02.2022Renewal fee patent year 05
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Lapses during opposition  TooltipCY14.03.2018
HU14.03.2018
AT15.02.2023
BG15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
IT15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
TR15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
[2026/04]
Former [2025/39]CY14.03.2018
HU14.03.2018
AT15.02.2023
BG15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
IT15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2025/36]CY14.03.2018
AT15.02.2023
BG15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
IT15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/51]AT15.02.2023
BG15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
IT15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/26]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
IT15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/11]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
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MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SI15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
BE31.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/09]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
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MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
CH31.03.2023
LI31.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/08]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
MC15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2024/02]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
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NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SK15.02.2023
SM15.02.2023
LU14.03.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/50]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SK15.02.2023
SM15.02.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/49]AT15.02.2023
CZ15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
PL15.02.2023
RO15.02.2023
RS15.02.2023
SE15.02.2023
SM15.02.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/48]AT15.02.2023
DK15.02.2023
EE15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
PL15.02.2023
RS15.02.2023
SE15.02.2023
SM15.02.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/46]AT15.02.2023
DK15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
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NL15.02.2023
PL15.02.2023
RS15.02.2023
SE15.02.2023
SM15.02.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/39]AT15.02.2023
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FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
PL15.02.2023
RS15.02.2023
SE15.02.2023
NO15.05.2023
GR16.05.2023
IS15.06.2023
PT15.06.2023
Former [2023/38]AT15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
PL15.02.2023
RS15.02.2023
SE15.02.2023
NO15.05.2023
GR16.05.2023
PT15.06.2023
Former [2023/37]AT15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
RS15.02.2023
SE15.02.2023
NO15.05.2023
GR16.05.2023
PT15.06.2023
Former [2023/36]AT15.02.2023
ES15.02.2023
FI15.02.2023
HR15.02.2023
LT15.02.2023
LV15.02.2023
NL15.02.2023
RS15.02.2023
SE15.02.2023
NO15.05.2023
PT15.06.2023
Former [2023/35]AT15.02.2023
ES15.02.2023
HR15.02.2023
LT15.02.2023
NL15.02.2023
RS15.02.2023
NO15.05.2023
PT15.06.2023
Former [2023/34]ES15.02.2023
LT15.02.2023
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Former [2023/33]ES15.02.2023
LT15.02.2023
Cited inInternational search[XAI] US2009045394  (SMEETON TIM MICHAEL et al.)
 [A] EP2151852  (S O I TEC SILICON et al.)
 [A] EP2151856  (S O I TEC SILICON et al.)
 [A]   SEKIGUCHI HIROTO ET AL: "Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 96, no. 23, 7 June 2010 (2010-06-07), pages 231104 - 231104, XP012131471, ISSN: 0003-6951, DOI: 10.1063/1.3443734

DOI:   http://dx.doi.org/10.1063/1.3443734
 [A]   SHIODA T ET AL: "Selective Area Metal-Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 15, no. 4, 1 July 2009 (2009-07-01), pages 1053 - 1065, XP011344263, ISSN: 1077-260X, DOI: 10.1109/JSTQE.2009.2015433

DOI:   http://dx.doi.org/10.1109/JSTQE.2009.2015433
ExaminationEP0786149
by applicantEP2151852
 EP2151856
 EP2865021
 FR2936903
 US9478707
   ZHAO JUN LIU ET AL.: "360 PPI Flip-Chip Mounted Active Matrix Adressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays", JOURNAL OF DISPLAY TECHNOLOGIE, April 2013 (2013-04-01)
   YIN ET AL.: "Buckling suppression of SiGe islands on compliant substrates", JOURNAL OF APPLIED PHYSICS, vol. 94, no. 10, 2003, pages 6875 - 6882, XP055181038, DOI: doi:10.1063/1.1621069

DOI:   http://dx.doi.org/10.1063/1.1621069
   M.V DURNEV ET AL.: "Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of diffrent orientations", PHYS. STATUS SOLIDI A, vol. 208, no. 11, 2011, pages 2671 - 2675
   LIU ET AL.: "Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 15, no. 4, July 2009 (2009-07-01), XP011344266, DOI: doi:10.1109/JSTQE.2009.2015675

DOI:   http://dx.doi.org/10.1109/JSTQE.2009.2015675
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