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Extract from the Register of European Patents

EP About this file: EP3607656

EP3607656 - METHOD AND APPARATUS FOR REDUCING IMPACT OF TRANSISTOR RANDOM MISMATCH IN CIRCUITS [Right-click to bookmark this link]
Status	The application has been refused Status updated on 07.03.2025 Database last updated on 28.03.2026
Former	Examination is in progress Status updated on 20.05.2022
Former	Request for examination was made Status updated on 10.01.2020
Former	The international publication has been made Status updated on 13.10.2018
Most recent event Tooltip	07.03.2025	Refusal of application	published on 09.04.2025 [2025/15]
Applicant(s)	For all designated states Micron Technology, Inc. 8000 South Federal Way Boise, ID 83716-9632 / US
	[2020/07]
Inventor(s)	01 / PAN, Dong 6530 E Signal Rock Dr Boise Idaho 83716 / US
	02 / PORTER, John, D. 2756 S Perrault Way Boise, Idaho 83716 / US
	[2020/26]
Former [2020/07]	01 / PAN, Dong 6530 E Signal Rock Dr Boise Idaho 83716 / US
	02 / PORTER, John, D. 12298 W. Oldham Ct Boise Idaho 83709 / US
Representative(s)	Marks & Clerk LLP 15 Fetter Lane London EC4A 1BW / GB
	[N/P]
Former [2020/07]	Granleese, Rhian Jane Marks & Clerk LLP 15 Fetter Lane London EC4A 1BW / GB
Application number, filing date	18780552.8	06.04.2018
	[2020/07]
	WO2018US26511
Priority number, date	US201715482020	07.04.2017 Original published format: US201715482020
	[2020/07]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2018187721
	Date:	11.10.2018
	Language:	EN
	[2018/41]
	Type:	A1 Application with search report
	No.:	EP3607656
	Date:	12.02.2020
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 11.10.2018 takes the place of the publication of the European patent application.
	[2020/07]
Search report(s)	International search report - published on:	KR	11.10.2018
	(Supplementary) European search report - dispatched on:	EP	12.11.2020
Classification	IPC:	H03F3/45, H03M1/10, H03F3/393, // H03M1/06, H03M1/12, H03M1/66	[2020/51]
	CPC:	H03F3/393 (EP); H03F3/45183 (KR); H03K5/007 (US); H03F3/45475 (EP,KR,US); H03F3/45977 (EP,US); H03F3/45995 (EP,US); (+) H03K17/161 (US); H03K5/1565 (US); H03M1/10 (KR); H03M3/00 (US); H03F2200/27 (EP); H03F2200/421 (EP); H03F2203/45044 (EP); H03F2203/45171 (EP); H03F2203/45212 (EP,US); H03F2203/45226 (EP); H03F2203/45614 (EP); H03F2203/45724 (EP); H03M1/0607 (EP); H03M1/12 (EP); H03M1/66 (EP) (-)
	Former IPC [2020/07]	H03F3/45, H03M1/10
Designated contracting states	AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2020/07]
Title	German:	VERFAHREN UND VORRICHTUNG ZUR VERRINGERUNG DER AUSWIRKUNG VON ZUFÄLLIGEN DISKREPANZEN EINES TRANSISTORS BEI SCHALTUNGEN	[2020/07]
	English:	METHOD AND APPARATUS FOR REDUCING IMPACT OF TRANSISTOR RANDOM MISMATCH IN CIRCUITS	[2020/07]
	French:	PROCÉDÉ ET APPAREIL PERMETTANT DE RÉDUIRE L'IMPACT D'UNE DÉSADAPTATION ALÉATOIRE DE TRANSISTOR DANS DES CIRCUITS	[2020/07]
Entry into regional phase	07.11.2019	National basic fee paid
	07.11.2019	Search fee paid
	07.11.2019	Designation fee(s) paid
	07.11.2019	Examination fee paid
Examination procedure	07.11.2019	Examination requested [2020/07]
	11.06.2021	Amendment by applicant (claims and/or description)
	19.05.2022	Despatch of a communication from the examining division (Time limit: M04)
	29.09.2022	Reply to a communication from the examining division
	30.10.2024	Application refused, date of legal effect [2025/15]
	30.10.2024	Date of oral proceedings
	02.12.2024	Minutes of oral proceedings despatched
	03.12.2024	Despatch of communication that the application is refused, reason: substantive examination [2025/15]
Fees paid	Renewal fee
	07.11.2019	Renewal fee patent year 03
	26.04.2021	Renewal fee patent year 04
	07.03.2022	Renewal fee patent year 05
	31.03.2023	Renewal fee patent year 06
	25.03.2024	Renewal fee patent year 07
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XI] US2014354351 (KAWLE ABHILASHA et al.) [X] 1-5,11-15 * figures 2-7 * * paragraphs [0005] - [0034] *[I] 6-10
		[XI] CHRISTIAN C ENZ ET AL: "Circuit Techniques for Reducing the Effects of Op-Amp Imperfections: Autozeroing, Correlated Double Sampling, and Chopper Stabilization", PROCEEDINGS OF THE IEEE., vol. 84, no. 11, 1 September 1996 (1996-09-01), US, pages 1584 - 1614, XP055386680, ISSN: 0018-9219, DOI: 10.1109/5.542410 [X] 1-5,11-15 * figures 10,15 * * page 1590, right-hand column, line 3 - page 1594, left-hand column, line 35 [I] 6-10 DOI:* http://dx.doi.org/10.1109/5.542410
	International search	[A] US7236117 (VARMA SEEMA et al.) [A] 1-20 * See column 4, line 9 - column 5, line 58; column 7, line 55 - column 8, line 16; claims 1, 14; and figures 1-5. *
		[A] US2011006831 (PAN DONG et al.) [A] 1-20 * See paragraph [0019]; and figure 2. *
		[A] US2013127526 (SAYUK MARK et al.) [A] 1-20 * See paragraph [0054]; and figure 8. *
		[A] US2012161991 (ZHANG BO et al.) [A] 1-20 * See paragraph [0021]; and figure 1. *
		[A] US7394309 (POTANIN VLADISLAV et al.) [A] 1-20 * See column 3, line 66 - column 4, line 21; and figure 3. *
	Examination	US9306589
		EP2173031
		US7358876
		FRAISSE CHRISTIAN ET AL: "A [Sigma][Delta] sense chain using chopped integrators for ultra-low-noise MEMS system", ESSCIRC CONFERENCE 2016: 42ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, IEEE, 12 September 2016 (2016-09-12), pages 153 - 156, XP032980831, DOI: 10.1109/ESSCIRC.2016.7598265 [I] 6-10 DOI: http://dx.doi.org/10.1109/ESSCIRC.2016.7598265
	by applicant	US201715482020
		US2014354351
		CHRISTIAN C. ENZ ET AL.: "Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization", PROCEEDINGS OF THE IEEE, vol. 84, no. 11, 1996, pages 1584 - 1614, XP055386680, DOI: 10.1109/5.542410 DOI: http://dx.doi.org/10.1109/5.542410

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