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Extract from the Register of European Patents

EP About this file: EP3588577

EP3588577 - TRANSISTOR CONTACT AREA ENHANCEMENT [Right-click to bookmark this link]
StatusExamination is in progress
Status updated on  29.07.2022
Database last updated on 05.10.2024
FormerRequest for examination was made
Status updated on  03.07.2020
FormerThe application has been published
Status updated on  05.12.2019
Most recent event   Tooltip29.08.2024New entry: Despatch of communication that application is refused 
Applicant(s)For all designated states
INTEL Corporation
2200 Mission College Blvd.
Santa Clara, CA 95054 / US
[2020/01]
Inventor(s)01 / MEHANDRU, Rishabh
4606 SW 42nd Place
Portland, OR 97221 / US
02 / GHANI, Tahir
14191 NW Stonebridge Drive
Portland, OR 97229 / US
03 / CEA, Stephen
3742 NW 3rd Avenue
Hillsboro, OR 97124 / US
 [2020/01]
Representative(s)HGF
HGF Limited
1 City Walk
Leeds LS11 9DX / GB
[N/P]
Former [2020/01]HGF Limited
Fountain Precinct
Balm Green
Sheffield S1 2JA / GB
Application number, filing date19176624.524.05.2019
[2020/01]
Priority number, dateUS20181602472429.06.2018         Original published format: US201816024724
[2020/01]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3588577
Date:01.01.2020
Language:EN
[2020/01]
Search report(s)(Supplementary) European search report - dispatched on:EP07.11.2019
ClassificationIPC:H01L29/66, H01L29/417, H01L29/78
[2020/01]
CPC:
H01L29/66803 (EP); H01L29/78 (CN); H01L29/785 (EP,US);
H01L29/0603 (CN); H01L29/0653 (US); H01L29/0684 (CN);
H01L29/0692 (CN); H01L29/0847 (US); H01L29/105 (US);
H01L29/41791 (EP,US); H01L29/66795 (EP,US); H01L29/7855 (CN);
H01L2029/7858 (US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/32]
Former [2020/01]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:TRANSISTORKONTAKTFLÄCHENERHÖHUNG[2020/01]
English:TRANSISTOR CONTACT AREA ENHANCEMENT[2020/01]
French:AMÉLIORATION DE ZONE DE CONTACT DE TRANSISTOR[2020/01]
Examination procedure01.07.2020Amendment by applicant (claims and/or description)
01.07.2020Examination requested  [2020/32]
01.07.2020Date on which the examining division has become responsible
02.08.2022Despatch of a communication from the examining division (Time limit: M04)
31.10.2022Reply to a communication from the examining division
09.08.2024Cancellation of oral proceeding that was planned for 13.11.2024
30.08.2024Despatch of communication that the application is refused, reason: substantive examination {1}
13.11.2024Date of oral proceedings (cancelled)
Fees paidRenewal fee
13.05.2021Renewal fee patent year 03
26.04.2022Renewal fee patent year 04
27.04.2023Renewal fee patent year 05
22.03.2024Renewal fee patent year 06
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Documents cited:Search[A]WO2010045087  (MICRON TECHNOLOGY INC [US], et al);
 [A]US9385140  (MCMULLAN RUSSELL CARLTON [US]);
 [A]US2016353038  (MADURAWE RAMINDA [US], et al);
 [A]WO2017111864  (INTEL CORP [US]);
 [I]WO2018039645  (INTEL CORP [US])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.