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EP3811416
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EP About this file: EP3811416
| EP3811416 - III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SUBSTRATES [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 26.03.2021 Database last updated on 19.03.2026 | |
| Former | The international publication has been made Status updated on 25.01.2020 | ||
| Former | unknown Status updated on 16.08.2019 | Most recent event Tooltip | 26.07.2025 | New entry: Renewal fee paid | Applicant(s) | For all designated states MACOM Technology Solutions Holdings, Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 / US | [2021/17] | Inventor(s) | 01 /
BOLES, Timothy, E. 18 Hillcrest Drive Tyngsboro, MA 01879 / US | 02 /
STRUBLE, Wayne, Mack 5C Hawthorne Village Franklin, MA 02038 / US | 03 /
LINTHICUM, Kevin, J. 517 Windstream Way Cary, NC 27511 / US | [2021/17] | Representative(s) | Cabinet Beaumont 4, Place Robert Schuman B.P. 1529 38025 Grenoble Cedex 1 / FR | [2021/17] | Application number, filing date | 19749925.4 | 19.07.2019 | [2021/17] | WO2019US42623 | Priority number, date | US201816039887 | 19.07.2018 Original published format: US201816039887 | US201816040230 | 19.07.2018 Original published format: US201816040230 | US201816039866 | 19.07.2018 Original published format: US201816039866 | US201816039900 | 19.07.2018 Original published format: US201816039900 | US201816040255 | 19.07.2018 Original published format: US201816040255 | [2021/17] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2020018915 | Date: | 23.01.2020 | Language: | EN | [2020/04] | Type: | A1 Application with search report | No.: | EP3811416 | Date: | 28.04.2021 | Language: | EN | The application published by WIPO in one of the EPO official languages on 23.01.2020 takes the place of the publication of the European patent application. | [2021/17] | Search report(s) | International search report - published on: | EP | 23.01.2020 | Classification | IPC: | H01L29/778, H01L29/872, H01L29/417, H01L29/20 | [2021/17] | CPC: |
H10D30/4732 (EP);
H10D64/257 (EP);
H10D8/60 (EP);
H10D62/8503 (EP);
H10D64/254 (EP);
H10D64/256 (EP)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2021/17] | Title | German: | HALBLEITERSTRUKTUREN AUS III-NITRID-MATERIAL AUF LEITFÄHIGEN SUBSTRATEN | [2021/17] | English: | III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SUBSTRATES | [2021/17] | French: | STRUCTURES SEMI-CONDUCTRICES EN MATÉRIAU DE NITRURE III SUR DES SUBSTRATS CONDUCTEURS | [2021/17] | Entry into regional phase | 06.05.2020 | National basic fee paid | 06.05.2020 | Designation fee(s) paid | 06.05.2020 | Examination fee paid | Examination procedure | 06.05.2020 | Examination requested [2021/17] | 06.05.2020 | Date on which the examining division has become responsible | 31.08.2021 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 26.07.2021 | Renewal fee patent year 03 | 27.07.2022 | Renewal fee patent year 04 | 26.07.2023 | Renewal fee patent year 05 | 25.07.2024 | Renewal fee patent year 06 | 25.07.2025 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [XI] JP2017216257 (SHARP KK et al.) | [I] US2008023706 (SAITO YASUNOBU et al.) | [XI] TAKENAKA ISAO ET AL: "High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, PLENUM, USA, vol. 62, no. 3, March 2014 (2014-03-01), pages 502 - 512, XP011541890, ISSN: 0018-9480, [retrieved on 20140303], DOI: 10.1109/TMTT.2014.2298381 DOI: http://dx.doi.org/10.1109/TMTT.2014.2298381 | [XI] SAITO W ET AL: "Breakdown behaviour of high-voltage GaN-HEMTs", MICROELECTRONICS AND RELIABILITY, vol. 55, no. 9, 10 July 2015 (2015-07-10), pages 1682 - 1686, XP029294642, ISSN: 0026-2714, DOI: 10.1016/J.MICROREL.2015.06.126 DOI: http://dx.doi.org/10.1016/j.microrel.2015.06.126 | by applicant | US6649287 | US7071498 | US2017301798 | US6051849 | US6265289 |