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Extract from the Register of European Patents

EP About this file: EP3857617

EP3857617 - METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION [Right-click to bookmark this link]
Former [2021/31]METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION AND SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION
[2024/15]
StatusThe patent has been granted
Status updated on  27.06.2024
Database last updated on 13.07.2024
FormerGrant of patent is intended
Status updated on  07.04.2024
FormerExamination is in progress
Status updated on  28.04.2023
FormerRequest for examination was made
Status updated on  02.07.2021
FormerThe international publication has been made
Status updated on  05.04.2020
Formerunknown
Status updated on  08.10.2019
Most recent event   Tooltip27.06.2024(Expected) grantpublished on 31.07.2024 [2024/31]
Applicant(s)For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastr. 27c
80686 München / DE
[2022/16]
Former [2021/31]For all designated states
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Hansastraße 27c
80686 München / DE
Inventor(s)01 / LOHMÜLLER, Elmar
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
02 / PREU, Ralf
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
03 / BALIOZIAN, Puzant
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
04 / FELLMETH, Tobias
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
05 / WÖHRLE, Nico
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
06 / SAINT-CAST, Pierre
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
07 / RICHTER, Armin
c/o Fraunhofer-Institut für Solare Energiesysteme
Heidenhofstraße 2
79110 Freiburg / DE
 [2021/31]
Representative(s)LBP Lemcke, Brommer & Partner Patentanwälte mbB
Siegfried-Kühn-Straße 4
76135 Karlsruhe / DE
[2024/31]
Former [2021/31]Lemcke, Brommer & Partner Patentanwälte Partnerschaft mbB
Siegfried-Kühn-Straße 4
76135 Karlsruhe / DE
Application number, filing date19778932.424.09.2019
[2021/31]
WO2019EP75597
Priority number, dateDE20181012348424.09.2018         Original published format: DE102018123484
[2021/31]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO2020064669
Date:02.04.2020
Language:DE
[2020/14]
Type: A1 Application with search report 
No.:EP3857617
Date:04.08.2021
Language:DE
The application published by WIPO in one of the EPO official languages on 02.04.2020 takes the place of the publication of the European patent application.
[2021/31]
Type: B1 Patent specification
No.:EP3857617
Date:31.07.2024
Language:DE
[2024/31]
Search report(s)International search report - published on:EP02.04.2020
ClassificationIPC:H01L31/18, H01L21/78, H01L31/05
[2021/31]
CPC:
H01L31/18 (EP); H01L31/186 (US); H01L21/78 (EP,US);
H01L31/05 (EP); H01L31/072 (US); Y02E10/50 (EP)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2021/31]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:VERFAHREN ZUM VEREINZELN EINES HALBLEITERBAUELEMENTES MIT EINEM PN-ÜBERGANG[2024/15]
English:METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION[2024/15]
French:PROCÉDÉ DE SÉPARATION D'UN COMPOSANT SEMI-CONDUCTEUR MUNI D'UNE JONCTION PN[2024/15]
Former [2021/31]VERFAHREN ZUM VEREINZELN EINES HALBLEITERBAUELEMENTES MIT EINEM PN-ÜBERGANG UND HALBLEITERBAUELEMENT MIT EINEM PN-ÜBERGANG
Former [2021/31]METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION AND SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION
Former [2021/31]PROCÉDÉ DE SÉPARATION D'UN COMPOSANT SEMI-CONDUCTEUR MUNI D'UNE JONCTION PN ET COMPOSANT SEMI-CONDUCTEUR MUNI D'UNE JONCTION PN
Entry into regional phase21.04.2021National basic fee paid 
21.04.2021Designation fee(s) paid 
21.04.2021Examination fee paid 
Examination procedure21.04.2021Amendment by applicant (claims and/or description)
21.04.2021Examination requested  [2021/31]
21.04.2021Date on which the examining division has become responsible
03.05.2023Despatch of a communication from the examining division (Time limit: M06)
13.11.2023Reply to a communication from the examining division
08.04.2024Communication of intention to grant the patent
21.06.2024Fee for grant paid
21.06.2024Fee for publishing/printing paid
21.06.2024Receipt of the translation of the claim(s)
Fees paidRenewal fee
11.08.2021Renewal fee patent year 03
29.07.2022Renewal fee patent year 04
25.07.2023Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational search[A]DE102007041885  (INFINEON TECHNOLOGIES AG [DE]) [A] 1-16 * abstract *;
 [A]US2011073974  (TAKANO EIJI [JP], et al) [A] 1-16 * abstract *;
 [A]EP2546889  (ASTRIUM GMBH [DE]) [A] 1-16* abstract *;
 [A]US2017179331  (GONZALEZ PABLO [US], et al) [A] 1-16 * abstract *
by applicant   - W. P. MULLIGANA. TERAOD. D. SMITHP. J. VERLINDENR. M. SWANSON, "Development of chip-size silicon solar cells", Proceedings of the 28th IEEE Photovoltaic Specialists Conference, (20000000), pages 158 - 163
    - D. KÖNIGG. EBEST, "New contact frame design for minimizing losses due to edge recombination and grid-induced shading", Solar Energy Materials and Solar Cells, (20030000), vol. 75, no. 3-4, doi:doi:10.1016/S0927-0248(02)00184-8, pages 381 - 386, XP004392546

DOI:   http://dx.doi.org/10.1016/S0927-0248(02)00184-8
    - M. D. ABBOTTJ. E. COTTERT. TRUPKER. A. BARDOS, "Investigation of edge recombination effects in silicon solar cell structures using photoluminescence", Applied Physics Letters, (20060000), vol. 88, no. 11, doi:doi:10.1063/1.2186510, page 114105, XP012080646

DOI:   http://dx.doi.org/10.1063/1.2186510
    - M. OSWALDM. TUREKJ. SCHNEIDERS. SCHÖNFELDER, "Evaluation of silicon solar cell separation techniques for advanced module concepts", Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, (20130000), pages 1807 - 1812
    - S. EITERNICKF. KAULEH.-U. ZÜHLKET. KIEßLINGM. GRIMMS. SCHOENFELDERM. TUREK, "High quality half-cell processing using thermal laser separation", Energy Procedia, (20150000), vol. 77, doi:doi:10.1016/j.egypro.2015.07.048, pages 340 - 345, XP055271630

DOI:   http://dx.doi.org/10.1016/j.egypro.2015.07.048
    - S. WEINHOLDA. GRUNERR. EBERTJ. SCHILLEH. EXNER, "Study of fast laser induced cutting of silicon materials", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM, (20140000), doi:doi:10.1117/12.2039819, page 89671J, XP060034447

DOI:   http://dx.doi.org/10.1117/12.2039819
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.