blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
FAQ - Register Alert
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP3841625

EP3841625 - TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DEVICE COMPONENTS AND COMPOSITION [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  28.05.2021
Database last updated on 29.07.2024
FormerThe international publication has been made
Status updated on  28.02.2020
Most recent event   Tooltip28.08.2023New entry: Renewal fee paid 
Applicant(s)For all designated states
MICRON TECHNOLOGY, INC.
8000 S Federal Way
Boise, Idaho 83716-9632 / US
[2021/26]
Inventor(s)01 / FANTINI, Paolo
8000 S. Federal Way
Boise, Idaho 83716-9632 / US
02 / BERNASCONI, Marco
University of Milano-Bicocca Dept.of Material
Science, Via Roberto Cozzi, 55
20125 Milan / IT
03 / GABARDI, Silvia
University of Milano-Bicocca Dept.of Material
Science, Via Roberto Cozzi, 55
20125 Milan / IT
 [2021/26]
Representative(s)Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
[N/P]
Former [2021/26]Granleese, Rhian Jane
Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
Application number, filing date19851271.713.08.2019
[2021/26]
WO2019US46403
Priority number, dateUS20181610793021.08.2018         Original published format: US201816107930
[2021/26]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2020041047
Date:27.02.2020
Language:EN
[2020/09]
Type: A1 Application with search report 
No.:EP3841625
Date:30.06.2021
Language:EN
The application published by WIPO in one of the EPO official languages on 27.02.2020 takes the place of the publication of the European patent application.
[2021/26]
Search report(s)International search report - published on:KR27.02.2020
(Supplementary) European search report - dispatched on:EP09.05.2022
ClassificationIPC:H01L45/00, H01L27/24, G11C13/00
[2022/23]
CPC:
G11C13/0004 (EP,US); H10N70/882 (KR); H10N70/8828 (EP,US);
G11C13/0023 (US); G11C13/004 (US); G11C13/0069 (EP,US);
G11C7/18 (EP,US); G11C8/14 (EP,US); H10B63/24 (EP);
H10B63/80 (EP); H10N70/231 (EP,KR,US); H10N70/821 (KR);
H10N70/826 (EP); H10N70/841 (US); G11C2213/72 (EP,US);
G11C2213/76 (EP,US); G11C2213/79 (EP) (-)
Former IPC [2021/26]H01L45/00
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2021/26]
TitleGerman:KOMPONENTEN EINER SPEICHERVORRICHTUNG AUS ÜBERGANGSMETALLDOTIERTEM GERMANIUM-ANTIMON-TELLURIUM (GST) UND ZUSAMMENSETZUNG[2021/26]
English:TRANSITION METAL DOPED GERMANIUM-ANTIMONY-TELLURIUM (GST) MEMORY DEVICE COMPONENTS AND COMPOSITION[2021/26]
French:COMPOSANTS ET COMPOSITION DE DISPOSITIF DE MÉMOIRE À BASE DE GERMANIUM-ANTIMOINE-TELLURE (GST) DOPÉ PAR UN MÉTAL DE TRANSITION[2021/26]
Entry into regional phase15.02.2021National basic fee paid 
15.02.2021Search fee paid 
15.02.2021Designation fee(s) paid 
15.02.2021Examination fee paid 
Examination procedure15.02.2021Examination requested  [2021/26]
03.01.2023Despatch of communication that the application is deemed to be withdrawn, reason: reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report not received in time
10.03.2023Amendment by applicant (claims and/or description)
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report/Supplementary European search report
10.03.2023Request for further processing filed
10.03.2023Full payment received (date of receipt of payment)
Request granted
20.03.2023Decision despatched
Fees paidRenewal fee
03.03.2021Renewal fee patent year 03
25.08.2022Renewal fee patent year 04
28.08.2023Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XI]US2002146643  (SHINGAI HIROSHI [JP], et al) [X] 1-9 * paragraphs [0023] - [0035] * [I] 10,11;
 [XI]US2010171087  (KUROTSUCHI KENZO [JP], et al) [X] 1-10,12,13,15 * paragraphs [0053] - [0055] - [0104] - [0106] - [0144] - [0146] - [0166]; figures 1, 2; claims 1, 7, 8 * [I] 11,14;
 [I]WO2017067314  (SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS [CN]) [I] 1,4,6,7,9,10,12,15 * example 6; claim 1 *;
 [P]US2018315921  (RAO FENG [CN], et al) [P] * paragraphs [0051] - [0055]; claim 1 *;
 [XI]  - WANG Y ET AL, "Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory", APPLIED PHYSICS LETTERS, (20180328), vol. 112, doi:10.1063/1.5012872, XP012227351 [X] 1,4-11 * page 2, column l, paragraph 2; figure 3d * * page 3, column r; figure 3b * [I] 12,14,15

DOI:   http://dx.doi.org/10.1063/1.5012872
 [XP]  - WANG Y ET AL, "High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping", SCRIPTA MATERIALIA, (20190128), vol. 164, doi:10.1016/j.scriptamat.2019.01.035, pages 25 - 29, XP055915212 [XP] 1,5,7-9,11 * page 25, column r - page 26, column l; figure 4 *

DOI:   http://dx.doi.org/10.1016/j.scriptamat.2019.01.035
International search[A]US2010328996  (SHIH YEN-HAO [US], et al) [A] 1-26* See paragraphs [0032]-[0037], [0079]-[0082]; and figure 1. *;
 [A]US2011049456  (LUNG HSIANG-LAN [US], et al) [A] 1-26 * See paragraphs [0036]-[0045], [0076]-[0079]; and figure 1. *;
 [A]KR20120031095  (ADVANCED TECH MATERIALS [US]) [A] 1-26 * See paragraphs [0063]-[0119]; and figure 7. *;
 [AX]US2014268991  (HU YONGJUN J [US], et al) [A] 1-18,20-22 * See paragraphs [0016]-[0065]; and figures 1-4. * [X] 19,23-26;
 [A]KR20150103536  (SAMSUNG ELECTRONICS CO LTD [KR]) [A] 1-26 * See paragraphs [0143]-[0147]; and figure 34e. *
by applicantUS2002146643
 US2010171087
    - WANG Y et al., "Scandium doped Ge Sb Tes for high-speed and low-power-consumption phase change memory", APPLIED PHYSICS LETTERS, (20180328), vol. 112, doi:10.1063/1.5012872, page 113104, XP012227351

DOI:   http://dx.doi.org/10.1063/1.5012872
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.