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Extract from the Register of European Patents

EP About this file: EP3736865

EP3736865 - 1T1R RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR [Right-click to bookmark this link]
Former [2020/46]1T1R RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR, TRANSISTOR AND DEVICE
[2023/35]
StatusThe patent has been granted
Status updated on  06.10.2023
Database last updated on 30.07.2024
FormerGrant of patent is intended
Status updated on  08.08.2023
FormerRequest for examination was made
Status updated on  09.10.2020
FormerThe international publication has been made
Status updated on  18.09.2020
Formerunknown
Status updated on  09.06.2020
Most recent event   Tooltip26.07.2024Lapse of the patent in a contracting state
New state(s): CZ, RO		published on 28.08.2024 [2024/35]
Applicant(s)For all designated states
SHENZHEN GOODIX TECHNOLOGY CO., LTD.
Floor 13
Phase B, Tengfei Industrial Building
Futian Free Trade Zone
Shenzhen, Guangdong 518045 / CN
[2020/46]
Inventor(s)01 / YAO, Guofeng
Floor 13
Phase B
Tengfei Industrial Building
Futian Free Trade Zone, Shenzhen
Guangdong 518045 / CN
02 / SHEN, Jian
Floor 13
Phase B
Tengfei Industrial Building
Futian Free Trade Zone, Shenzhen
Guangdong 518045 / CN
 [2020/46]
Representative(s)Elzaburu S.L.P.
Edificio Torre de Cristal
Paseo de la Castellana 259 C, planta 28
28046 Madrid / ES
[2023/45]
Former [2020/46]Elzaburu S.L.P.
Miguel Angel 21, 2nd floor
28010 Madrid / ES
Application number, filing date19891684.308.03.2019
[2020/46]
WO2019CN77477
Filing languageZH
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2020181410
Date:17.09.2020
Language:ZH
[2020/38]
Type: A1 Application with search report 
No.:EP3736865
Date:11.11.2020
Language:EN
[2020/46]
Type: B1 Patent specification 
No.:EP3736865
Date:08.11.2023
Language:EN
[2023/45]
Search report(s)International search report - published on:CN17.09.2020
(Supplementary) European search report - dispatched on:EP07.12.2020
ClassificationIPC:H10B63/00, H01L29/786
[2023/35]
CPC:
H01L29/66666 (EP); H10B63/30 (US); H01L21/02164 (US);
H01L21/02236 (US); H01L21/26513 (US); H01L21/28035 (US);
H01L23/528 (US); H01L29/0847 (US); H01L29/42376 (US);
H01L29/66568 (US); H10B63/34 (EP); H10B63/80 (EP,US);
H10N70/021 (US); H10N70/826 (EP,US); H01L21/02255 (US);
H01L21/76898 (EP); H01L29/78642 (EP); H10N70/20 (EP);
H10N70/8836 (EP); Y02D10/00 (EP) (-)
Former IPC [2021/01]H01L27/24, H01L29/786
Former IPC [2020/46]H01L29/786
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/46]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:1T1R RESISTIVER DIREKTZUGRIFFSSPEICHER UND VERFAHREN ZU SEINER HERSTELLUNG[2023/35]
English:1T1R RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR[2023/35]
French:MÉMOIRE VIVE RÉSISTIVE 1T1R ET SON PROCÉDÉ DE FABRICATION[2023/35]
Former [2020/46]1T1R-RESISTIVER DIREKTZUGRIFFSSPEICHER UND VERFAHREN ZU SEINER HERSTELLUNG, TRANSISTOR UND VORRICHTUNG
Former [2020/46]1T1R RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREFOR, TRANSISTOR AND DEVICE
Former [2020/46]MÉMOIRE VIVE RÉSISTIVE 1 T1R ET SON PROCÉDÉ DE FABRICATION, TRANSISTOR ET DISPOSITIF
Entry into regional phase09.06.2020Translation filed 
09.06.2020National basic fee paid 
09.06.2020Search fee paid 
09.06.2020Designation fee(s) paid 
09.06.2020Examination fee paid 
Examination procedure09.06.2020Examination requested  [2020/46]
21.06.2021Amendment by applicant (claims and/or description)
09.08.2023Communication of intention to grant the patent
03.10.2023Fee for grant paid
03.10.2023Fee for publishing/printing paid
03.10.2023Receipt of the translation of the claim(s)
Fees paidRenewal fee
08.02.2021Renewal fee patent year 03
25.03.2022Renewal fee patent year 04
22.03.2023Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT08.11.2023
CZ08.11.2023
DK08.11.2023
EE08.11.2023
ES08.11.2023
HR08.11.2023
LT08.11.2023
LV08.11.2023
NL08.11.2023
PL08.11.2023
RO08.11.2023
RS08.11.2023
SE08.11.2023
SM08.11.2023
BG08.02.2024
NO08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
[2024/35]
Former [2024/34]AT08.11.2023
DK08.11.2023
EE08.11.2023
ES08.11.2023
HR08.11.2023
LT08.11.2023
LV08.11.2023
NL08.11.2023
PL08.11.2023
RS08.11.2023
SE08.11.2023
SM08.11.2023
BG08.02.2024
NO08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
Former [2024/33]AT08.11.2023
DK08.11.2023
ES08.11.2023
HR08.11.2023
LT08.11.2023
LV08.11.2023
NL08.11.2023
PL08.11.2023
RS08.11.2023
SE08.11.2023
SM08.11.2023
BG08.02.2024
NO08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
Former [2024/26]AT08.11.2023
ES08.11.2023
HR08.11.2023
LT08.11.2023
LV08.11.2023
NL08.11.2023
PL08.11.2023
RS08.11.2023
SE08.11.2023
BG08.02.2024
NO08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
Former [2024/25]AT08.11.2023
ES08.11.2023
HR08.11.2023
LT08.11.2023
NL08.11.2023
PL08.11.2023
RS08.11.2023
SE08.11.2023
BG08.02.2024
NO08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
Former [2024/23]AT08.11.2023
ES08.11.2023
LT08.11.2023
NL08.11.2023
BG08.02.2024
GR09.02.2024
IS08.03.2024
PT08.03.2024
Former [2024/21]LT08.11.2023
NL08.11.2023
BG08.02.2024
GR09.02.2024
IS08.03.2024
Former [2024/20]GR09.02.2024
IS08.03.2024
Documents cited:Search[XI]US2003146469  (MATSUOKA HIDEYUKI [JP], et al) [X] 1,8 * paragraphs [0005] - [0009] - [0060] - [0066]; figures 1, 3-5, 15-22 * [I] 6;
 [XI]US2005201182  (OSADA KENICHI [JP], et al) [X] 1 * paragraphs [0033] - [0035]; figures 1, 2 * [I] 6;
 [XI]EP1717861  (ST MICROELECTRONICS SRL [IT]) [X] 1 * paragraphs [0013] - [0036]; figures 2-19 *[I] 6;
 [X]US2006273298  (PETTI CHRISTOPHER J [US]) [X] 1,6,8 * paragraphs [0031] - [0036] - [0045] - [0080]; figures 2, 4 *;
 [XAI]US2013270508  (LI XIANG [SG], et al) [X] 1,2,8 * paragraphs [0099] - [0106]; figure 3 * [A] 3-5,7,9-15 [I] 6;
 [XAI]US2014124728  (KIM CHANG-JUNG [KR], et al) [X] 1,2,8 * paragraphs [0042] , [0047] - [0063]; figures 3-9 * [A] 3-5,7,9-15 [I] 6
International search[A]CN102368536  (UNIV BEIJING) [A] 1-30 * entire document *;
 [X]CN102637729  (UNISANTIS ELECTRONICS JP LTD) [X] 15-20, 22 * description, paragraphs 203-206 *;
 [A]CN102637729  (UNISANTIS ELECTRONICS JP LTD) [A] 1-14, 21, 23-30 * description, paragraphs 203-206 *;
 [A]US2014241038  (TERAI MASAYUKI [JP]) [A] 1-30* entire document *;
 [X]WO2018118096  (INTEL CORP [US]) [X] 1-22 * description, paragraphs 17-94, and figures 1-9 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.