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Extract from the Register of European Patents

EP About this file: EP3734677

EP3734677 - QUASICRYSTALLINE MATERIAL AND SEMICONDUCTOR DEVICE APPLYING THE SAME [Right-click to bookmark this link]
StatusExamination is in progress
Status updated on  13.08.2021
Database last updated on 18.11.2024
FormerRequest for examination was made
Status updated on  15.01.2021
FormerThe application has been published
Status updated on  02.10.2020
Most recent event   Tooltip25.10.2024Change - classificationpublished on 27.11.2024 [2024/48]
25.10.2024Change - classificationpublished on 27.11.2024 [2024/48]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
129 Samsung-ro
Yeongtong-Gu
Suwon-Si
Gyeonggi-do 16677 / KR
For all designated states
Industry-Academic Cooperation Foundation, Yonsei University
50, Yonsei-ro
Seodaemun-gu
Seoul 03722 / KR
[2020/45]
Inventor(s)01 / LEE, Eunsung
c/o Samsung Advanced Institute of Technology
130, Samsung-ro, Yeongtong-gu, Suwon-si
16678 Gyeonggi-do / KR
02 / KIM, Dohyang
Industry-Academic Cooperation Foundation, Yonsei
University
50, Yonsei-ro, Seodaemun-gu
03722 Seoul / KR
03 / YOON, Duseop
c/o Samsung Advanced Institute of Technology
130, Samsung-ro, Yeongtong-gu, Suwon-si
16678 Gyeonggi-do / KR
04 / YOO, Joungeun
c/o Samsung Advanced Institute of Technology
130, Samsung-ro, Yeongtong-gu, Suwon-si
16678 Gyeonggi-do / KR
 [2020/45]
Representative(s)Elkington and Fife LLP
Prospect House
8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
[2020/45]
Application number, filing date20164805.223.03.2020
[2020/45]
Priority number, dateKR2019005072330.04.2019         Original published format: KR 20190050723
[2020/45]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3734677
Date:04.11.2020
Language:EN
[2020/45]
Search report(s)(Supplementary) European search report - dispatched on:EP30.07.2020
ClassificationIPC:H10N70/20, H10N70/00
[2024/48]
CPC:
H10N70/231 (EP,CN,KR,US); C22C21/02 (CN,US); C22C30/00 (CN);
H10N70/826 (EP); H10N70/841 (KR); H10N70/881 (EP,CN,KR,US);
C22C2200/06 (US) (-)
Former IPC [2020/45]H01L45/00
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2021/07]
Former [2020/45]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:QUASIKRISTALLINES MATERIAL UND HALBLEITERBAUELEMENT DAMIT[2020/45]
English:QUASICRYSTALLINE MATERIAL AND SEMICONDUCTOR DEVICE APPLYING THE SAME[2020/45]
French:MATÉRIAU QUASICRYSTALLIN ET DISPOSITIF SEMI-CONDUCTEUR L'UTILISANT[2020/45]
Examination procedure07.01.2021Amendment by applicant (claims and/or description)
07.01.2021Examination requested  [2021/07]
07.01.2021Date on which the examining division has become responsible
16.08.2021Despatch of a communication from the examining division (Time limit: M04)
09.12.2021Reply to a communication from the examining division
Fees paidRenewal fee
02.03.2022Renewal fee patent year 03
27.02.2023Renewal fee patent year 04
26.02.2024Renewal fee patent year 05
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Documents cited:Search[Y]US2012049144  (FRANCESCHINI MICHELE M [US], et al);
 [Y]US2017194337  (LEE HYUNG-DONG [KR]);
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.