EP3734677 - QUASICRYSTALLINE MATERIAL AND SEMICONDUCTOR DEVICE APPLYING THE SAME [Right-click to bookmark this link] | Status | Examination is in progress Status updated on 13.08.2021 Database last updated on 18.11.2024 | |
Former | Request for examination was made Status updated on 15.01.2021 | ||
Former | The application has been published Status updated on 02.10.2020 | Most recent event Tooltip | 25.10.2024 | Change - classification | published on 27.11.2024 [2024/48] | 25.10.2024 | Change - classification | published on 27.11.2024 [2024/48] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 129 Samsung-ro Yeongtong-Gu Suwon-Si Gyeonggi-do 16677 / KR | For all designated states Industry-Academic Cooperation Foundation, Yonsei University 50, Yonsei-ro Seodaemun-gu Seoul 03722 / KR | [2020/45] | Inventor(s) | 01 /
LEE, Eunsung c/o Samsung Advanced Institute of Technology 130, Samsung-ro, Yeongtong-gu, Suwon-si 16678 Gyeonggi-do / KR | 02 /
KIM, Dohyang Industry-Academic Cooperation Foundation, Yonsei University 50, Yonsei-ro, Seodaemun-gu 03722 Seoul / KR | 03 /
YOON, Duseop c/o Samsung Advanced Institute of Technology 130, Samsung-ro, Yeongtong-gu, Suwon-si 16678 Gyeonggi-do / KR | 04 /
YOO, Joungeun c/o Samsung Advanced Institute of Technology 130, Samsung-ro, Yeongtong-gu, Suwon-si 16678 Gyeonggi-do / KR | [2020/45] | Representative(s) | Elkington and Fife LLP Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | [2020/45] | Application number, filing date | 20164805.2 | 23.03.2020 | [2020/45] | Priority number, date | KR20190050723 | 30.04.2019 Original published format: KR 20190050723 | [2020/45] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3734677 | Date: | 04.11.2020 | Language: | EN | [2020/45] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.07.2020 | Classification | IPC: | H10N70/20, H10N70/00 | [2024/48] | CPC: |
H10N70/231 (EP,CN,KR,US);
C22C21/02 (CN,US);
C22C30/00 (CN);
H10N70/826 (EP);
H10N70/841 (KR);
H10N70/881 (EP,CN,KR,US);
C22C2200/06 (US)
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Former IPC [2020/45] | H01L45/00 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2021/07] |
Former [2020/45] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | QUASIKRISTALLINES MATERIAL UND HALBLEITERBAUELEMENT DAMIT | [2020/45] | English: | QUASICRYSTALLINE MATERIAL AND SEMICONDUCTOR DEVICE APPLYING THE SAME | [2020/45] | French: | MATÉRIAU QUASICRYSTALLIN ET DISPOSITIF SEMI-CONDUCTEUR L'UTILISANT | [2020/45] | Examination procedure | 07.01.2021 | Amendment by applicant (claims and/or description) | 07.01.2021 | Examination requested [2021/07] | 07.01.2021 | Date on which the examining division has become responsible | 16.08.2021 | Despatch of a communication from the examining division (Time limit: M04) | 09.12.2021 | Reply to a communication from the examining division | Fees paid | Renewal fee | 02.03.2022 | Renewal fee patent year 03 | 27.02.2023 | Renewal fee patent year 04 | 26.02.2024 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US2012049144 (FRANCESCHINI MICHELE M [US], et al); | [Y]US2017194337 (LEE HYUNG-DONG [KR]); |