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EP3723136
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EP About this file: EP3723136
| EP3723136 - LDMOS WITH DIODE COUPLED ISOLATION RING [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 19.08.2022 Database last updated on 02.11.2024 | |
| Former | Examination is in progress Status updated on 18.02.2022 | ||
| Former | Request for examination was made Status updated on 16.04.2021 | ||
| Former | The application has been published Status updated on 11.09.2020 | Most recent event Tooltip | 19.08.2022 | Withdrawal of application | published on 21.09.2022 [2022/38] | Applicant(s) | For all designated states NXP USA, Inc. 6501 William Cannon Drive West Austin TX 78735 / US | [2020/42] | Inventor(s) | 01 /
LIN, Xin c/o NXP B.V., Intellectual Property Group High Tech Campus 60 5656 AE Eindhoven / NL | 02 /
ZHANG, Zhihong c/o NXP B.V., Intellectual Property Group High Tech Campus 60 5656 AE Eindhoven / NL | 03 /
CHENG, Xu c/o NXP B.V., Intellectual Property Group High Tech Campus 60 5656 AE Eindhoven / NL | 04 /
ZHU, Ronghua c/o NXP B.V., Intellectual Property Group High Tech Campus 60 5656 AE Eindhoven / NL | [2020/42] | Representative(s) | Hardingham, Christopher Mark NXP Semiconductors Intellectual Property Group Abbey House 25 Clarendon Road Redhill, Surrey RH1 1QZ / GB | [2020/42] | Application number, filing date | 20167694.7 | 02.04.2020 | [2020/42] | Priority number, date | US201916379765 | 09.04.2019 Original published format: US201916379765 | [2020/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3723136 | Date: | 14.10.2020 | Language: | EN | [2020/42] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.08.2020 | Classification | IPC: | H01L29/78, H01L21/761, H01L29/10 | [2020/42] | CPC: |
H01L29/7818 (EP,CN);
H01L29/7819 (US);
H01L21/761 (EP);
H01L29/0619 (CN);
H01L29/0623 (US);
H01L29/0649 (US);
H01L29/1095 (EP,US);
H01L29/42368 (US);
H01L29/7823 (EP,US);
H01L29/7835 (EP);
H01L29/0638 (EP);
H01L29/0653 (EP);
H01L29/086 (EP);
H01L29/0869 (EP);
H01L29/0878 (EP);
H01L29/0886 (EP);
H01L29/1083 (EP);
H01L29/1087 (EP);
H01L29/8613 (EP)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2021/20] |
| Former [2020/42] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | LDMOS MIT DIODENGEKOPPELTEM ISOLATIONSRING | [2020/42] | English: | LDMOS WITH DIODE COUPLED ISOLATION RING | [2020/42] | French: | LDMOS COMPORTANT UN ANNEAU D'ISOLATION COUPLÉ À UNE DIODE | [2020/42] | Examination procedure | 15.03.2021 | Amendment by applicant (claims and/or description) | 14.04.2021 | Examination requested [2021/20] | 14.04.2021 | Date on which the examining division has become responsible | 17.02.2022 | Despatch of a communication from the examining division (Time limit: M06) | 15.08.2022 | Application withdrawn by applicant [2022/38] | Fees paid | Renewal fee | 02.05.2022 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [IY]US2006011974 (PENDHARKAR SAMEER [US]) [I] 11 * paragraphs [0022] - [0038]; figures 1-7 * [Y] 1-10,12,13; | [Y]EP2680299 (FREESCALE SEMICONDUCTOR INC [US]) [Y] 1-10,12,13 * paragraphs [0034] - [0041] - [0 52]; figures 2-7 *; | [Y]EP2731145 (FREESCALE SEMICONDUCTOR INC [US]) [Y] 4 * paragraphs [0021] - [0030]; figures 2,3 *; | [Y]US2015295082 (KIM YONG-DON [KR], et al) [Y] 8,9 * paragraphs [0039] - [0067]; figure 1 *; | [Y]US2013134511 (YANG HONGNING [US], et al) [Y] 10 * figure 1 * |